A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.     

电泳沉积法制备介孔TiO2/单壁碳纳米管薄膜

采用电泳沉积法, 在FTO/介孔TiO2薄膜上制备了介孔TiO2/单壁碳纳米管(SWCNTs)薄膜电极, 用Raman和SEM等手段对薄膜电极进行了表征. 结果表明, SWCNTs已沉积到介孔TiO2薄膜上. 分别用四羧基苯基卟啉(TCPP)和联吡啶钌化合物N719对其进行敏化, 并组装成太阳能电池. 研究结果表明, 与单纯的TiO2粒子膜相比, 介孔TiO2和SWCNTs的紧密结合可使得光生电子更容易传输, 光电转换效率显著提高.     

温度对水稻谷氨酰胺合成酶和NADH-谷氨酸合酶表达的影响

测定了不同温度（32℃和23℃）培养下水稻幼苗根和叶的谷氨酰胺合成酶（GS）同工酶以及依赖于NADH的谷氨酸合酶（NADH－GOGAT）的活性变化。结果表明，温度对水稻根和叶的GS活性具有相反的作用。23℃下生长的水稻根的GS活性明显高于32℃下生长的活性，而23℃下生长的叶的GS活性显著低于生长在32℃下的叶的活性。Native-PAGE和活性染色以及蛋白质印迹表明，根和叶的GS活性变化主要是由于GSrb和GS2活性及其相应蛋白质水平变化所致。23℃下生长的水稻根的NADH－GOGAT活性显著高于32℃下生长的活性，而叶的活性则基本保持恒定。     

等渗水分和盐胁迫对水稻幼苗叶片氨同化的影响

在盐（NaCl）胁迫和等渗的聚乙二醇（polyethylene glycol，PEG）6000引起的水分胁迫下，检测了水稻叶片NH4^＋同化酶及其相关参数。结果表明，两种胁迫均对水稻叶片NH4^＋的同化产生了显著的影响。与PEC-6000相比，在等渗条件下，NaCl更显著的抑制了谷氨酰胺合成酶（GS）的活性，造成叶片中NH4^＋的积累水平更高，与盐胁迫一样，NH4^＋的积累同样也诱导了水分胁迫下依赖于NADH的谷氨酸脱氢酶（NADH—GDH）水平的上升，但与盐胁迫相比，上升幅度较小。     

5-取代吲哚类化合物的合成

5－取代吲哚类化合物是一种重要的医药中间体。从古典的Fischer方法开始，有关合成5－取代吲哚类化合物的方法不断出现。本文对各种合成方法进行了介绍和评价。参考文献30篇。     

Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature formulas for corresponding model parameters. The proposed method is validated by a 1 × 0.2 × 16 μm~2 SiGe HBT over a wide temperature range(from 218 K to 473 K), and good matching is obtained between the extracted and modeled results. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.