ZnS：Cu水溶胶的发致发光研究

研究了硫脲和硫代硫酸钠体系中ＺｎＳ：Ｃｕ纳米微粒的光致发光性能随Ｃｕ＾＋离子掺杂浓度及生长时间的变化。在３２５ｎｍ的紫外光激发下,ＺｎＳ：Ｃｕ纳米微粒产生位于５００～５４０ｎｍ的宽带发射,Ｃｕ＾＋掺杂浓度为０．６％时发射达到最强。该发射峰随掺杂浓度的提高和微粒生长时间的延长而红移;当Ｃｕ＾＋掺杂浓度为０．２％时,ＺｎＳ：Ｃｕ纳米微粒还产生了一个位于４５０ｎｍ的蓝色发射带,该发射在掺杂浓度更高时被灭     

稀土配合物作为前驱体合成Y_2O_3∶Eu纳米材料

以稀土羧酸配合物为前驱体, 采用快速热分解方法制备了纳米Ｙ２Ｏ３∶Ｅｕ 荧光材料,进行了结构、尺寸及形貌表征． 随着Ｅｕ３＋ 掺杂浓度的提高, 样品的晶胞参数加大, 当Ｅｕ３＋掺杂量高达３０％ 时, 体系仍能保持Ｙ２Ｏ３ 基质的立方相结构; 样品的晶粒度与退火温度及配合物前驱体组成有关． 退火温度越高、前驱体中Ｒｅ３＋ 与配体的摩尔比越小, 样品的粒径越大． 随着Ｅｕ３＋ 掺杂浓度的提高, 激发光谱红移, 发射强度在掺杂浓度分别为５％ 和１０％ 时有极大值; 发射强度与Ｒｅ３＋ 和配体摩尔比及退火温度有关．     

钾色散光学滤波器的滤波特性

从理论和实验两个方面对强度磁场中钾D2线法拉第反常色散滤波器的特性进行了研究,在不同工作条件下,获得线芯和线翼两种方式的法拉第反常色散滤波器,并讨论了温度对其滤波特性的影响。     

HL-2A装置边缘等离子体参数测量

等离子体的杂质含量由杂质源分布以及SOL和芯部等离子体中各种杂质输运过程确定。HL-2A装置主真空室的活动马赫／雷诺协强／朗缪尔10探针阵列具有很高的时间和空间分辨能力，能够直接测量边缘等离子体参数并研究边缘扰动和相关特性。大量的实验表明：约束的改进与旋转速度的增加和边缘涨落的下降密切相关。     

Polarization-dependent femtosecond laser filamentation in air

We report on a systematic study of the laser polarization effect on a femtosecond laser filamentation in air.By changing the laser's ellipticity from linear polarization to circular polarization, the onset position of laser filament formation becomes farther from the focusing optics, the filament length is shorter, and less laser energy is deposited. The laser polarization effect on air filaments is supported by a simulation and analysis of the polarization-dependent critical power and ionization rates in air.     

Simulation of polarization-insensitive multiple-quantum-well superluminescent diodes

The 1.3-μm polarization-insensitive superluminescent diodes (SLDs) with weak tensile strained multiplequantum-well (MQW) and complex strained MQW were demonstrated theoretically based on the simulation of energy band structure and gain spectra at different injected carrier densities. Compared with the weak tensile strained MQW, the complex strained MQW gets higher modal gain and better modal gain matching between TE and TM modes, and the polarization sensitivity of TE and TM optical spectra can remain less than 1.0 dB over a bandwidth of 200 nm.     

CP130-Ⅱ型弱光检测系统光谱灵敏度的分析研究

由光栅单色仪、光电倍增管组成的 CP1 30 - 型弱光检测系统的光谱灵敏度受其子系统的光谱灵敏度的制约。分析测试结果表明 :对该系统光谱灵敏度影响较大的主要是光电倍增管 ,同型号不同系统的光谱灵敏度存在显著差异。作定量光谱测量必须作相应的修正。     

双色光场驱动产生单个阿秒脉冲过程中的宏观效应

通过数值模拟三维传播方程研究了双色场产生高次谐波过程中宏观效应的影响,重点分析了阿秒脉冲的时域形状.在6 fs/800 nm和21.3 fs/400 nm组成的双色场中,通过调节双色场间的相对延时,双色场各焦点相对于气体盒子入口的间距和双色场束腰半径和气体压强等参数,可以在平台区得到超宽带连续谱.对该连续谱中420—540 eV的谐波直接进行滤波后可以得到时间同步性很好的单个阿秒脉冲.这种性质对实验上通过双色场方案产生超短的阿秒脉冲非常有利. 关键词： 传播效应 阿秒脉冲 时间同步性     

Modified impulsive synchronization of fractional order hyperchaotic systems

In this paper, a modified impulsive control scheme is proposed to realize the complete synchronization of fractional order hyperchaotic systems. By constructing a suitable response system, an integral order synchronization error system is obtained. Based on the theory of Lyapunov stability and the impulsive differential equations, some effective sufficient conditions are derived to guarantee the asymptotical stability of the synchronization error system. In particular, some simpler and more convenient conditions are derived by taking the fixed impulsive distances and control gains. Compared with the existing results, the main results in this paper are practical and rigorous. Simulation results show the effectiveness and the feasibility of the proposed impulsive control method.     

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

Tung＇s model was used to analyze anomalies observed in Ti/Si C Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the ‘T0anomaly＇ and the difference（△Φ）between the uniformly high barrier height（Φ0B） and the effective barrier height（Φeff B）. Those two parameters of Ti Schottky contacts on 4H–Si C were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in Schottky barrier（SB） height（ΦB） and decrease in the ideality factor（n） with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-°C thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.