有限系统的电子结构研究

选取二维和三维亚方晶格作为有限系统的集团模型，在紧束缚近似下，分别计算了不同尺寸集团的态密度。探讨了态密度与集团大小的关系以及受表面效应的影响。     

金融约束对股票收益的影响

本文在我国沪市A股环境下考察金融约束对股票收益的影响．主要运用多元回归方法测试金融约束与股票收益的关系．金融约束因子是反映丁公司资产投资的能力，综合内部运作状况和外部经济环境的特征量，通过数学建模和实证分析发现：股票收益中的确存在金融约束因子，且金融约一般导致股票收益水平下降；此因子与公司规模、流通股本比例等因素相对独立。     

Deposition and characterization of YBCO/CeO2/YSZ/CeO2 multilayers on biaxially textured Ni substrates

CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.     

丙酮醛催化剂的TPR研究

本文利用TPR等方法对Sn,Sb,Cu,Bi,Mo等氧化物的双组分催化剂进行表征,关联催化剂的TPR还原性质与丙酮催化氧化生成丙酮醛反应性质,探讨催化剂的活性、选择性与其组成的规律.     

多媒体物理教学实践和探索—教改调研一例

本文介绍了我们在多媒体大课室进行一年《大学物理》教学的一些做法及对学生的一次关于多媒体教学的问卷调研。     

Role of amorphous silicon domains of Er^3＋ emission in the Er—doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.     

电致变色氧化钨薄膜锂离子阈值注入量的研究

探讨了ＷＯ３薄膜与１ＭＬｉＣｌＯ４－ＰＣ溶液之间的界面电位差的变化规律及测量方法，制备了三种具有不同电致变色性能的ＷＯ３薄膜，并对它们进行了界面电位差随Ｌｉ＾＋注入量大小变化的测量，通过实验发现，界面电位差的变化趋势能够反映出氧化钨薄膜的Ｌｉ＾＋离子阈值注入量的大小。进而找到了用电阻热蒸发方法制备了电致变色氧化钨薄膜的最佳工艺条件。     

ELECTRICAL TRANSPORT BEHAVIOR OF AN Au DIFFUSE FRINGE FILM PERCOLATION SYSTEM

The preparation of a metallic diffuse fringe film system by dc-magnetron sputtering is described. The diffuse fringe structure of the film system is clearly observed in the SEM photograph when, during the film deposition process, the distance between the slit shutter and the substrate is large enough. Our experimental results show that the anomalous nonlinear I-V behavior of the system is mainly caused by the diffuse fringe effect. The temperature dependence of the sheet resistance is similar to that of the metallic flat film system in the temperature interval 77-300 K.     

复杂系统的离散质量生存决策

在复杂系统的质量生存交互决策中,引入了最大质量生存函数W*的概念.为得到W*的数值计算方法,本文系统地研究了离散质量生存(交互)决策和最大离散质量生存函数,推导出最大离散质量生存函数的递归算法,最后用离散算法获得最大Q-生存函数W*的两类离散近似解:有限近似离散近似解和加厚法离散近似解,并给出近似解的收敛性证明.     

关于矩阵秩命题的证明

利用齐次线性方程组 AX =0的系数矩阵的秩和它的基础解系之间的关系 ,比较容易地证明许多有关矩阵秩或向量组秩的一些命题 .