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Effect of micro-dimple patterns on capillary pull-off force and friction force of silicon surface
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A microtribometer is used to measure and compare pull-off forces and
friction forces exerted on (a) micro-dimpled silicon surfaces, (b)
bare silicon surfaces, and (c) octadecyltrichlorosilane (OTS)
treated silicon surfaces at different relative humidity (RH) levels
separately. It is found that above a critical RH level, the
capillary pull-off force increases abruptly and that the
micro-dimple textured surface has a lower critical RH value as well
as a higher pull-off force value than the other two surfaces. A
micro topography parameter, namely sidewall area ratio, is found to
play a major role in controlling the capillary pull-off force.
Furthermore, micro-dimpled silicon surface is also proved to be not
sensitive to variation in RH level, and can realize a stable and
decreased friction coefficient compared with un-textured silicon
surfaces. The reservoir-like function of micro dimples is considered
to weaken or avoid the breakage effect of liquid bridges at
different RH levels, thereby maintaining a stable frictional
behaviour. 相似文献
34.
用网络分析仪对HL-2A装置LHCD天线阵列子波导间的相位差,子波导间的相对功率和各主波导的电压驻波比等参数进行了测量。用测量值代入程序计算得到的波谱与理论计算的结果进行比较,表明天线发射的波谱与数值计算基本一致,能满足将要在HL-2A进行的LHCD实验。 相似文献
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A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device. 相似文献
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