煤尘层最低着火温度变化规律实验研究

为研究煤尘层最低着火温度随煤样变质程度、煤尘粒径及煤尘层厚度的变化规律,采用煤尘层最低着火温度测定系统进行实验研究,结果表明:随着煤样由褐煤到无烟煤变质程度逐渐增大,煤尘层最低着火温度由290℃上升到400℃以上,同时,褐煤、长焰煤、不粘煤、气煤煤尘层着火时观察到明显的火焰。随着煤尘粒径不断减小,不同煤质的煤尘层最低着火温度明显减小,煤尘层厚度为15mm时,随着煤尘粒径由0.5mm减小至0.075mm,不同煤质煤尘层最低着火温度分别减小了31.0%、26.7%、28.1%、25.8%、28.6%、27.8%、18.9%和15.0%,煤尘粒径影响作用十分显著。随着煤尘层厚度的增大,不同煤质在不同粒径下的煤尘层最低着火温度都减小,其中无烟煤的变化最不明显。     

重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

为了提高纠错编码（ECC）的有效性,先进的静态随机存储器（SRAM）多采用位交错结构。但是,在没有物理版图信息的情况下,位交错设计使得从辐照测试数据中提取出多单元翻转（MCU）变得更加困难。运用Bi离子辐照带有ECC的65 nm SRAM器件,研究了该款器件在重离子辐照下的敏感性。为"伪多位翻转（FMBU）"以及MCU的数据分析提供了理论指导和帮助,完善了判别MCU的基本法则。除此之外,研究结果表明,ECC的汉明编码对于纳米器件的效果不够理想。在未来的空间应用中,需考虑更高层次的编码算法来抵抗单粒子翻转。In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.     

电离总剂量对纳米SRAM器件单粒子翻转敏感性的影响

电离总剂量（TID）与单粒子效应（SEE）是纳米SRAM器件在航天应用中的主要威胁。随着CMOS工艺的进步,两种辐射效应在纳米SRAM器件中的协同效应出现了一些新现象,有必要进一步开展深入研究。利用γ射线以及不同种类重离子对两款纳米SRAM器件开展了辐照实验,研究了不同辐照参数、测试模式以及数据图形条件下,电离总剂量对单粒子翻转（SEU）敏感性的影响。研究结果表明,γ射线辐照过后,存储单元中反相器开关阈值减小,漏电流增大,导致SRAM存储单元抗翻转能力降低,SEU截面有明显增大;未观察到"印记效应",数据图形对测试结果没有明显影响;多位翻转（MBU）比例无明显变化。     

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset(SEU)test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

PCRA法在瓦斯爆燃最高温度预测中的应用

采用主成分回归分析(PCRA)法实现瓦斯爆燃最高温度预测.选取爆燃最高温度影响因素分别为点火能量、环境温度、环境湿度、瓦斯浓度、氧气浓度、惰性气体浓度、管道长度、点火头与管道开口端的距离,共8个.通过影响因素主成分分析,得出瓦斯浓度与氧气浓度对瓦斯爆燃最高温度影响作用最大.通过计算瓦斯爆燃最高温度影响因素主成分得分,构建瓦斯爆燃最高温度预测模型.结果表明:PCRA法预测瓦斯爆燃最高温度最大误差为4.17%,最小仅为0.13%,证明了PCRA法在瓦斯爆燃最高温度预测中的科学性.     

基于改进近邻函数准则的煤质识别方法研究

为实现对煤炭种类的快速有效煤质识别,选取实验室实测的十六种煤样的十项煤质特性指标数据,分别利用多功能多元素综合分析仪进行碳、氢、氧、硫元素测定,利用透反射偏光显微镜进行镜质组、丝质组和壳质组三大显微组分测定,利用电子天平称量法进行了块状颗粒体比例和粒状颗粒体比例测定.对近邻函数准则识别算法进行改进,采用隶属关系矩阵替代基于近邻函数准则识别算法中的距离矩阵,并利用欧氏距离法构造隶属关系矩阵,增强了煤质特性指标数据间的关联性.通过煤质识别实例分析,计算改进的煤质特性指标近邻函数矩阵与类内类间连接损失量,得到烟煤的总损失最小,进而判定煤样16属于烟煤一类.结果与实际相符,证明了方法的实用性和正确性,对煤质检测部门和煤炭勘探部门具有一定借鉴意义.     

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.     

重离子辐照引起磁性隧道结功能失效类型及机理研究

重点研究了磁性隧道结(MTJ)的电学性能受离子注量影响的物理规律。实验首次发现了高能Ta离子辐射损伤导致MTJ电学功能失效的现象,主要失效模式为:高、低电阻态失效,其中79.9%的功能失效为高电阻态失效。计算表明,单个10.9 MeV/u的Ta离子辐照引入的损伤无法导致MTJ宏观电学功能失效。结合理论计算与Monte Carlo模拟分析,MTJ中的绝缘势垒层与铁磁薄膜的损伤是出现高、低电阻态失效的内因。     

重离子核反应对单粒子翻转的影响（英文）

LET作为一个传统的工程参量,并不能完全满足单粒子翻转数据表征的需要,而且也不能直接地反映核反应的一些特性(包括核反应概率与次级粒子),因此研究了重离子与器件作用过程中核反应对单粒子翻转的影响。基于蒙特卡罗模拟与深入的分析,本研究对比了在直接电离与考虑核反应两种模式下的模拟结果。在模拟中,利用不同的重离子表征了核反应在单粒子翻转发生中所起的作用。结果显示,核反应对单粒子翻转截面的贡献依赖于离子的能量,并呈现非单调的变化关系。基于模拟的结果,建议用重离子核反应引起单粒子翻转的最恶劣情况来预估空间单粒子翻转率。