Anomalous magnetic properties of an iron film system deposited on fracture surfaces of α-Al2O3 ceramics

An iron film percolation system is fabricated by vapour-phase deposition on fracture surfaces of α-Al2O3 ceramics. The zero-field-cooled （ZFC） and field-cooled （FC） magnetization measurement reveals that the magnetic phase of the film samples evolve from a high-temperature ferromagnetic state to a low-temperature spin-glass-like state, which is also demonstrated by the temperature-dependent ac susceptibility of the iron films. The temperature dependence of the exchange bias field He of the iron film exhibits a minimum peak around the temperature T=5 K, which is independent of the magnitude of the cooling field Hcf. However, for T 〉 10K, （1） He is always negative when Hcf=2kOe and （2） for Hcf= 20 kOe （1Oe≈80 A/m）, He changes from negative to positive values as T increases. Our experimental results show that the anomalous hysteresis properties mainly result from the oxide surfaces of the films with spin-glass-like phase.     

35MeV/u36Ar+124Sn反应中类弹产物的同位素分布特性

测量了35MeV/u³⁶Ar+¹²⁴Sn反应中5.3°处类弹产物的同位素分布,观察到随着出射动能的增加,产物的平均中质比逐渐减小而接近弹核的平均中质比.同位旋相关的量子分子动力学计算表明,随着反应时间的增加,类弹产物的平均出射动能逐渐减小而平均N/Z值则逐渐增大.另外,碰撞参数也影响类弹产物的同位素组成:随着碰撞参数的减小,类弹产物的平均N/Z值减小.     

Dynamical Lie algebra method for highly excited vibrational state of asymmetric linear tetratomic molecules

The highly excited vibrational states of asymmetric linear tetratomic molecules are studied in the framework of Lie algebra. By using symmetric groupU ₁(4)U ₂(4)⊗U ₃(4), we construct the Hamiltonian that includes not only Casimir operators but also Majorana operators M₁₂, M₁₃ and M₂₃, which are useful for getting potential energy surface and force constants in Lie algebra method. By Lie algebra treatment, we obtain the eigenvalues of the Hamiltonian, and make the concrete calculation for molecule C₂HF.     

钨酸锌晶体的受激拉曼散射和光致发光研究

采用皮秒532nm 激光激发，研究了ZnWO₄晶体的受激拉曼散射和本征荧光发射.在SRS光谱中观察到一级(558.7nm)和二级(588.6nm)斯托克斯光，线宽分别为130和77cm^－1, 一级斯托克斯光的抽运阈值为6.8mJ.在532nm激光抽运下ZnWO₄晶体的荧光光谱呈现出由能量为2.30，2.45和2.83eV的3个高斯分量组成的独特结构.光致发光表明晶体具有从400nm到650nm的宽带本征发光，其峰值波长为472.0nm，相应于钨氧之间的辐射跃迁. 关键词： 晶体 钨酸锌 受激拉曼散射 闪烁体     

CsI(Tl)晶体探测器APD读出的温度效应

对中国科学院近代物理研究所自行生长的铊激活碘化铯闪烁晶体CsI(Tl)光输出及Hamamtsu公司生产的S8664-1010型雪崩光二极管(APD)增益对温度的依赖关系做了系统研究. 结果表明, CsI(Tl)晶体光产额在室温范围内随着温度的增加而增加, 在－2℃—8℃温度范围内的平均温度系数为0.67%/℃, 在8℃—25℃温度范围内的平均温度系数为0.33%/℃. 而对所使用的APD, 其增益在室温范围内的温度系数为－3.68%℃(工作电压400V). APD结合CsI(Tl)晶体在室温下对¹³⁷Cs的662keV γ射线的能量分辨可达5.1%.     

电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.     

Transmission Properties of W3 Y-Branch Filters in Two-Dimensional Photonic Crystal Slabs

A highly efficient W3 Y-branch filter in a two-dimensional photonic crystal slab with triangular lattice of air holes is designed and fabricated, and its transmission properties are measured. By accurately adjusting the size of the resonant cavities, the minimum wavelength spacing of 7 nm between two channels is realized. The corresponding resonant wavelengths of the two cavities agree well with the calculated ones. This implies that this kind of fiIter may be promising in integrated wavelength division multiplexing system.     

矩形波导栅慢波系统的实验研究

 从实验上研究了矩形波导栅慢波系统的色散特性及其耦合装置的驻波系数，用分布加工的方法分别制作了矩形、燕尾形、梯形3种不同槽形的矩形波导栅慢波结构模型和带输入输出结构的矩形波导栅慢波结构实体模型。采用谐振法测量它们的色散特性和驻波系数，实验结果与理论计算值和模拟值吻合良好。