用微束激光穿刺技术将商陆抗病毒蛋白(PAP)cDNA导入马铃薯的研究

以马铃薯(Solanum tuberosum L.)品种“津引8号”微薯切片作为外植体,采用微束激光穿刺技术获得了商陆抗病毒蛋白(PAP)cDNA的导入、整合与表达.实验首次利用庆大霉素筛选马铃薯再生苗,庆大霉素筛选浓度为80mg/L,共得到65株庆大霉素抗性苗,全部移栽成活.PCR扩增和PCR-Southern杂交分析表明,PAP cDNA已经稳定整合到马铃薯基因组.攻毒实验发现,多数转基因植株生长健康,对供试病毒PVX具有高度抗性.     

范德堡方法在ZnO薄膜测试中的应用

近年来,随着对宽禁带半导体材料,氧化锌薄膜研究的快速发展,对其电学性质的研究也显得尤为重要。主要介绍范德堡方法在ZnO薄膜电学性质测量中的应用,并对初步测量结果作简要的讨论。     

Stochastic Simulation of Turing Patterns

We investigate the effects of intrinsic noise on Turing pattern formation near the onset of bifurcation from the homogeneous state to Turing pattern in the reaction-diffusion Brusselator. By performing stochastic simulations of the master equation and using Gillespie＇s algorithm, we check the spatiotemporal behaviour influenced by internal noises. We demonstrate that the patterns of occurrence frequency for the reaction and diffusion pro- cesses are also spatially ordered and temporally stable. Turing patterns are found to be robust against intrinsic fluctuations. Sfochastic simulations also reveal that under the influence of intrinsic noises, the onset of Turing instability is advanced in comparison to that predicted deterministically.     

核形变随Z,N的变化与核子间相互作用的电荷无关性

用双能级模型以及与电荷无关的核子-核子相互作用研究核形变随Z,N的变化,得到了与实验大体相符的结果.     

择优取向MgO在Si衬底上的直流溅射制备及其性能表征

采用直流磁控溅射并通过优化工艺参数,在（100）Si衬底上成功制备了高度（100）择优的MgO薄膜和MgO/TiN双层膜结构.对 （100）MgO择优取向温度影响机理做了详细讨论,并利用XRD,AFM,FESEM等手段研究了在（100）Si和（100）TiN/Si两种衬底上,不同工艺条件下MgO薄膜的表面和断面微观结构,表征了MgO薄膜的柱状生长结构和与TiN薄膜的良好外延关系.在对薄膜光学特性的研究中,利用Sellmeier模型获得了Si上MgO薄膜在可见光波段的折射率参数（550 nm处折射率为1.6 关键词： MgO薄膜 择优取向 直流溅射 折射率拟合     

变分不等式的极大熵函数方法

利用极大熵函数方法将不等式组及变分不等式的求解问题转化为近似可微优化问题,给出了不等式组及变分不等式问题近似解的可微优化方法,得到了不等式组和变分不等式问题的解集合的示性函数.     

Adaptive multitrack reconstruction for particle trajectories based on fuzzy c-regression models

In this paper, an approach to straight and circle track reconstruction is presented, which is suitable for particle trajectories in an homogenous magnetic field (or 0 T) or Cherenkov rings. The method is based on fuzzy c-regression models, where the number of the models stands for the track number. The approximate number of tracks and a rough evaluation of the track parameters given by Hough transform are used to initiate the fuzzy c-regression models. The technique effectively represents a merger between track candidates finding and parameters fitting. The performance of this approach is tested by some simulated data under various scenarios. Results show that this technique is robust and could provide very accurate results efficiently.     

新型辐射变色凝胶的紫外辐照研究

将类丁二炔化合物自组装成纳米囊泡后,均匀分散于凝胶载体中,研制出一种新型的辐射变色凝胶剂量计。用电镜观测了囊泡形貌,采用CL-1000型紫外交联仪对凝胶进行辐照,测试并研究了凝胶对紫外辐照的变色响应、辐射后效应、扩散效应等剂量学性能。结果表明:该辐射变色凝胶在5~150mJ/cm2能量密度范围内对紫外线辐照具有良好的响应线性,同时克服了扩散效应、辐射后效应、成型能力差等现有凝胶剂量计的不足。该辐射变色凝胶剂量计适于光学扫描方式测量剂量分布。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

氮气氛中高温退火对ZnO薄膜发光性质的影响

以二乙基锌和水汽分别作为锌源和氧源,用LP-MOCVD方法在p型Si(100)衬底上生长了单一取向的ZnO薄膜。对得到的样品在氮气气氛中进行高温热处理,退火温度分别为900,1000,1100℃。利用室温PL谱、XRD、AFM、XPS等方法对样品的性质进行了研究。研究表明:(1)随着退火温度的升高,样品的结晶性质也逐渐提高,从表面形貌观察到晶粒尺寸逐渐增大;(2)当退火温度从900℃升高至1000℃时,样品的光致发光谱中可见光波段的发光强度有所减弱,而紫外波段的发光强度明显增强;当退火温度升高至1100℃时,可见光波段的发光几乎完全被抑制,而紫外波段的发光强度急剧增强。分析认为,高温退火改善晶体结晶质量的同时调制了样品的Zn/O比,氮气气氛下的热处理使得样品内的氧原子逸出,来自受主缺陷OZn的可见发射随温度升高逐渐减弱,而当退火温度达到1000℃以上时样品成为富锌状态,此时与施主缺陷Zni有关的紫外发射急剧增强。