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Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model
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In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga1-xInxSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga1-xInxSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga1-xInxSb layer and the alloy composition in Ga1-xInxSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained. 相似文献
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Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors
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This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances. 相似文献
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A tunable infrared plasmonic polarization filter is proposed and investigated in this paper. The filter is based on the sandwich absorption structure which consists of three layers. The top layer is an array of asymmetrical cross resonator.The middle and bottom layers are dielectric spacer and metal film respectively. By absorbing specific wavelength of the incident light perfectly, the reflection spectrum of the structure shows filter performance. The calculated results show that the absorption wavelength is strongly dependent on the length of branch of the asymmetrical cross resonator which is parallel to the light polarization and independent of the length of the vertical one. Therefore, the asymmetrical cross resonator filter structure opens the way for freely tuning the filtering wavelength for a different light polarization. We can fix a resonant wavelength(absorption wavelength) corresponding to one polarization and change the resonant wavelength for the other polarization by adjusting the corresponding branch length of the asymmetrical cross resonator, or change the two resonant wavelengths of both two polarizations at the same time. 相似文献
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在0.02 mol/L (CH2)6N4-HCl(pH 3.57)介质中,In(Ⅲ)与N-邻羧基苯基-N′-(2-氨基乙基)草酰胺生成络合物,并吸附于电极表面,于-0.60 V(vs.SCE)得到络合物吸附还原波.其2次微分极谱峰电流与In(Ⅲ)浓度在3.8×10-7~2.2×10-5 mol/L内呈良好的线性关系,检出限为3.6×10-8 mol/L.方法已应用于陶瓷颜料、矿石、人发中微量In(Ⅲ)的测定,并对电化学反应机理进行了初步探讨. 相似文献
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合成了3种新的异三核配合物,其组成为(Ln2(bPy)4(Cu(oPba)(ClO4)2)(ClO4)2,其中oPba表示邻苯双(草胺酸根),bPy表示2,2′-联吡啶Ln表示Pr,Sm,Eu通过元素分析,红外光谱,紫外光谱,差热-热重及洋电导分析等手段,对它们的配位方式和某些物理化学性质进行了研究。 相似文献