垂直直立石墨烯纳米墙的制备及光热感应

基于等离子体增强化学气相沉积(PECVD)技术,通过调节实验参数,在绝缘衬底玻璃上成功制备出了三维垂直直立的石墨烯纳米墙(GNWs)材料.生长过程中发现石墨烯的质量和尺寸大小与相应的生长时间有关,利用拉曼(Raman)光谱、扫描电子显微镜(SEM)、原子力显微镜(AFM)等仪器对石墨烯纳米墙作了表征.并且,利用石墨烯纳米墙超高的比表面积和优异的散热特性,发现垂直直立的石墨烯纳米片-玻璃杂化混合材料在光热感应上有着良好的响应,将有望促进垂直直立石墨烯纳米片-玻璃杂化的混合材料在透明的太阳热装置和绿色保暖建筑材料上的应用.     

光纤连接器端面几何参量自动测量仪

报道了一种高精度测量光纤连接器端面几何参量的自动测量仪。叙述了光纤连接器的端面几何参量的测量原理。由光纤连接器端面形貌和纤芯中心坐标,可以高精度得到曲率半径、顶点偏移量、端面倾斜角和光纤高度等影响连接器性能的关键端面几何参量。该仪器体积小,自动化程度高,用户界面友好,使用方便,可测量物理接触、角度式物理接触等类型的光纤连接器端面几何参量。实际测量证明,该测量仪有很好的重复测量精度。该测量仪与美国Dorc公司ZX-1 mini PMS测量仪和Norland公司NC3000测量仪相比,测量精度水平相当。该仪器样机已通过华东国家计量测试中心的测试。     

开敞式蜗壳轴流式水轮机湍流计算及性能预估

本文在进行模型水轮机试验的基础上,完成了开敞式蜗壳轴流式模型水轮机的全流道三维定常湍流计算。计算程序以雷诺时均连续方程和N-S方程作为控制方程,选用标准κ-ε双方程湍流模型使方程组封闭。数值求解通过CIMPLEC算法实现速度、压力的分离求解,离散差分格式具有二阶精度。通过计算获得了各过流部件的流动细节,预估了水轮机的能量性能,并与试验结果进行了比较。     

函数图像对称性的一种判定方法

揭示了函数导数的奇偶性与函数图像对称性的关系,发现了一种可以用来判定函数图像是否具有轴对称性或中心对称性的有效方法.     

α-环糊精主客体识别超分子水凝胶的制备及其宏观流变性能构建过程研究

采用7 wt%的α-环糊精(α-CD)溶液和5 wt%的甲氧基聚乙二醇甲基丙烯酸酯均聚物(PMPEGA-2000)溶液制备了α-CD/PMPEGA-2000超分子水凝胶,并对其形貌、结构、形成条件和宏观流变学性能构建过程进行了表征和研究。结果表明,体积比不低于1.5:1是两种溶液混合后形成凝胶的必要条件;当体积比为2:1时,形成的凝胶黏度最大。热重分析、X射线粉末衍射分析和扫描电镜结果表明,该凝胶是基于α-CD与PMPEGA-2000之间的主客体识别所形成,具有三维网络结构。光学微流变分析结果显示,该凝胶宏观流变性能的构建过程实则是凝胶内部主客体识别交联点不断增多,网络结构强度不断增强的过程。该过程始于α-CD溶液与PMPEGA-2000溶液混合后的8′36′′,在64′00′′后基本完成,耗时约55′24′′。     

胍盐离子液体捕获CO2温室气体的机理

通过量子力学与分子动力学对胍盐离子液体的模拟表明,胍阳离子与氯负离子之间存在较强的相互作用,其相互作用能约为-109．216kcal／m01．从能量与几何分布可见,两种空间分布方式中最稳定构象为Middle作用模式．径向分布函数也验证了这一结论．C02含量的不断增加并没有对离子液体的结构产生影响,而是被离子液体的空腔捕获．     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

Cryptanalysis on an image block encryption algorithm based on spatiotemporal chaos

An image block encryption scheme based on spatiotemporal chaos has been proposed recently.In this paper,we analyse the security weakness of the proposal.The main problem of the original scheme is that the generated keystream remains unchanged for encrypting every image.Based on the flaws,we demonstrate a chosen plaintext attack for revealing the equivalent keys with only 6 pairs of plaintext/ciphertext used.Finally,experimental results show the validity of our attack.