八-羟基喹啉铝薄膜光致发光的厚度依赖性质

In situ thickness dependent photoluminescence (PL) measurements of tris(8-hydroxyquinoline) aluminum(Alq3) film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.     

C60单晶在274K附近的取向相变

测量了C₆₀单晶在274K附近的电导率和在150—340K范围内的差分比热,有关在251K附近与sc-fcc一级相交联系的比热曲线中的δ峰已有报道,在274K附近激活能的变化及比热曲线中270—310K的似λ峰表明在251K以上的fcc结构有C₆₀分子的取向相变,考虑到对称性,结合比热峰的似λ性及激活能的进一步分析,我们得出这一新的相变是从存在有C₆₀分子取向有序畴的fcc到C₆₀分子取向无序的fcc的结构转变,C₆₀分子的自由转变温度约为281K。     

COT-H在金属Ru表面上沉积的光电子能谱分析

采用紫外光电子能谱（UPS），分析了不对称四苯基四苯乙炔基环辛四烯（COT H）有机发光材料与金属之间的界面电子结构，研究了在金属/COT H界面上的逸出功变化.UPS谱中位于费米能级以下5.6、7.9和10.2 eV处的三个谱峰分别来自于COT H材料中苯环的πCC、σCC和σCH轨道.位于3.8 eV处的谱峰反映了八个苯环聚合后具有π轨道特性的C－C键.从UPS谱图中可以看到， COT H材料的最高占有态（HOS：highest occupied state）位于费米能级以下1.8 eV处.COT H材料的逸出功只有3.2 eV，比清洁Ru表面的逸出功小1.0 eV.角分辨紫外光电子能谱（ARUPS）的结果表明,组成COT H分子应该近似平行于衬底表面.     

Mn overlayers on PbTe（111）： Substitutional adsorption and interface formation

The formation of the Mn/Pb Te（111） interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a（√3 ×√3）R30？-Pb0.67Mn0.33 Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/Pb Te（111） interface. The valence band maximum associated with the Pb0.67Mn0.33 Te layer is located at 1.27 e V below the Fermi level, and a schematic electronic structure of the Mn/Pb Te（111）interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 e V,in comparison with 4.35 e V for the Pb-covered substituted substrate and 3.95 e V for the pristine Pb Te（111） surface.     

C2H4在清洁和有Cs覆盖的Ru(0001)表面吸附的TDS研究

用热脱附谱(TDS)方法研究了乙烯(C₂H₄)在Ru(0001)表面上的吸附.在低温下(200K以下)乙烯可以在清洁及有Cs的Ru(0001)表面上以分子状态稳定吸附,在衬底温度升高至200K以上时,乙烯发生了脱氢分解反应,乙烯分解后的主要产物为乙炔(C₂H₂).在清洁的Ru(0001)表面,乙烯有两种吸附状态,脱附温度分别为275K和360K.而乙炔的脱附温度为350K.在Ru(0001)表面有Cs的存在时,乙烯分解 关键词： 乙烯 钌(0001)表面 铯钌(0001)表面乙烯 钌(0001)表面 铯钌(0001)表面     

乙烯在Ru(1010)表面价带电子特性研究

在200K以下乙烯(C2H4)可以在Ru(1010)表面上以分子状态稳定吸附,200K以上乙烯发生了脱氢分解反应生成乙炔(C2H2).乙烯分解生成乙炔后,σCC和σCH分子轨道能级向高结合能方向分别移动了0.5和1.1 eV.偏振角分辨紫外光电子谱(ARUPS)结果表明:在Ru(1010)表面上,乙烯和脱氢反应后生成的乙炔分子的C-C键轴都不平行于表面,而是沿表面(0001)晶向倾斜.     

窄带隙IV-VI族半导体PbTe(111)的表面氧化及氧的热脱附机理

利用X射线光电子能谱(XPS)、扫描隧道显微镜(STM)以及低能电子衍射(LEED),对PbTe(111)薄膜的表面氧化及氧的热脱附机理进行了研究.结果表明:PbTe(111)薄膜经500VAr+轰击加上250℃高温退火循环处理,可得到呈(1×1)周期性排列的清洁表面.将此清洁表面暴露于大气两天后,表面被氧化形成了PbO2、PbO和TeO2,氧化层的厚度大于2个单原子层(ML),与清洁PbTe(111)表面相比,被氧化的PbTe(111)表面的Te3d5/2与Pb4f7/2芯态谱峰的面积比明显减小,表明被氧化的PbTe(111)表面是富Pb的.在热脱附处理过程中,PbO2和TeO2的芯态峰消失,且O1s芯态峰的强度迅速减弱,表明加热处理不仅使PbO2和TeO2发生了分解,同时也使氧发生了脱附,但PbO即使在350℃退火仍吸附于PbTe(111)表面.     

Adsorption behavior of iron phthalocyanine on a Ag（110） surface

An investigation on the growth behavior of FePc on a Ag(110) surface is carried out by using scanning tunneling microscopy(STM).At an FePc coverage of 3.5 ML,an ordered superstructure(densely packed) with a lateral shift is observed.The densely packed superstructure can be attributed to the substrate commensuration and the intermolecular van der Waals attractive interaction.The in-plane lateral shift in the superphase is specifically along the direction of [10] azimuth.The results provide a new perspective to understanding the intermolecular and the molecule-substrate interactions.     

有机半导体在金属Ru(0001)上的界面特性研究

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K3C60单晶膜的同步辐射光电子谱研究

在C60单晶(111)解理面上制备出厚度约30 nm的K3C60单晶膜.利用同步辐射光源,在低温下(约150 K)测量了样品法向发射的角分辨光电子谱.观察到K3C60导带和价带明显的色散.导带的光电子谱峰可清晰分辨出4个子峰,这些子峰的最大色散超过0.5 eV,并且色散曲线与K3C60的一维无序晶体结构模型下的能带理论基本吻合,只是子带间隔差异较大.