Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

The degradation mechanism of GaN-based near-ultraviolet (NUV, 320-400 nm) light emitting diodes (LEDs) with low-indium content under electrical stress is studied from the aspect of defects. A decrease in the optical power and an increase in the leakage current are observed after electrical stress. The defect behaviors are characterized using deep level transient spectroscopy (DLTS) measurement under different filling pulse widths. After stress, the concentration of defects with the energy level of 0.47-0.56 eV increases, accompanied by decrease in the concentration of 0.72-0.84 eV defects. Combing the defect energy level with the increased yellow luminescence in photoluminescence spectra, the device degradation can be attributed to the activation of the gallium vacancy and oxygen related complex defect along dislocation, which was previously passivated with hydrogen. This study reveals the evolution process of defects under electrical stress and their spatial location, laying a foundation for manufacture of GaN-based NUV LEDs with high reliability.     

Photovoltaic Characteristic of La0.7Sr0.3MnO3/ZnO p-n Heterojunction

We report on the photovoltaic properties of Lao.7Sro.3MnO3//ZnO heterojunction fabricated by pulsed laser deposition methods. Nanosecond photovoltaic pulses are observed in this junction in the wavelength range from ultraviolet-visible to infrared. A qualitative explanation is presented, based on an analysis of the photovoltaic signals of p-n heterojunction.     

Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition （LPCVD） with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction （XRD） patterns indicate that the deposited films are highly textured （111） orientation. The surface morphology and roughness are determined by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm （AFM 5×5 μm images）. Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems （MEMS） devices such as SiC based filters.     

铁磁电材料BiFeO_3低温拉曼谱的研究

BiFeO3是少数的在室温时具有磁电耦合效应的铁磁电材料之一,在信息存储、传感器和自旋电子器件等方面都有潜在的应用前景。在4-1100K,通过拉曼散射研究了BiFeO3单晶的性质,讨论了与结构相变相联系的磁有序。     

层流条件下并列三圆柱涡激振动响应与尾流形态

应用基于嵌入式压强-力迭代的高精度浸入边界法研究等间距并列三圆柱涡激振动。其中,雷诺数Re=100,间距比T/D=2.0～5.0,圆柱质量比m*=2.0,折合流速Ur=2.0～10.0,忽略振动系统的阻尼且三圆柱仅横向振动。研究发现,圆柱的振动响应随折合流速的增加呈现初始响应分支和下端响应分支两种模式;振幅响应出现不连续现象,且随着间距比的增加,该不连续现象对应的折合流速增加;尾流模式与间距比和折合流速密切相关。共发现六种尾流形态,分别为窄宽窄尾流、不规律尾流、反相同步尾流、调制尾流、同相同步尾流和偏斜尾流。总结并绘制了尾流形态在参数空间[Ur,T/D]内的分区图。     

酮类甲醛荧光探针的合成及其光学性质

设计合成了两种化合物4-氨基4-（4-甲氧基苯基）-3-丁烯-2-酮（1b）和4-氨基-4-（1,3-亚甲二氧基苯基-5-基）-3-丁烯-2-酮（2b）,测试了其在不同甲醛含量下的紫外吸收光谱及单光子荧光光谱。当含有100 μmol/L和5 μmol/L的甲醛时,化合物1b和2b的紫外吸收峰强度分别达到其最大值。在单光子荧光方面,化合物1b的荧光发射峰位置在384 nm,与紫外吸收峰相比红移50 nm。化合物2b的荧光发射峰呈现出双峰形状,其发射峰位置分别在384 nm及411 nm左右。当加入15 μmol/L的甲醛时,化合物2b的411 nm处的荧光发射峰明显增强,两峰的重叠程度降低,可作为检测甲醛的特征变化。以上数据表明,化合物1b和2b不仅能够对微量甲醛产生响应,也可作为一种理想平台为更进一步拓宽化合物1b和2b在监测生物体系中甲醛荧光生物成像上的应用奠定理论基础。     

磁过滤真空弧源沉积技术制备C/C多层类金刚石膜及其摩擦磨损性能研究

采用磁过滤直流阴极真空弧源沉积技术在Si基体和GCr15基体表面制备了C/C多层DLC膜,通过X射线光电子能谱仪分析薄膜结构特征;用原子力显微镜观察C/C多层DLC膜的表面形貌;采用台阶仪测试薄膜厚度;利用纳米硬度仪测试薄膜纳米硬度;在销盘式摩擦磨损试验机上进行C/C多层DLC膜在大气下的摩擦性能评价,同时比较了单层DLC膜、TiN膜和C/C多层DLC膜的耐磨性能.结果表明:C/C多层DLC膜表面光滑、致密,厚度达0.7 μm,硬度高达68 GPa,与SiC球对摩时的摩擦系数为0.10左右,耐磨性明显优于单层DLC膜和TiN膜.     

侧面泵浦大功率双包层光纤激光器的双凹槽金属二元光栅

 将双凹槽金属二元光栅用于侧面泵浦大功率双包层光纤激光器中,这种具有等槽深、不等线宽的双凹槽金属二元光栅可以被直接制作在双包层光纤的侧面内包层上,以实现大功率的激光泵浦。通过选择梯度优化算法（如拟牛顿算法）和微型遗传算法准确地预测出：利用这种双凹槽金属二元光栅结构能实现对TE偏振光的耦合效率为77.27%,而对TM偏振光的耦合效率为94.77%。同时,也对这种结构的制作容差和最小特征尺寸进行了分析和计算。     

半导体激光器线阵的棱镜组光束整形器和光纤耦合输出

针对半导体激光器线阵输出光束快慢轴方向光参数积不对称问题,提出并制作了基于直角棱镜片的光束整形器,其具有结构简单紧凑,制作安装容易的特点。通过数值仿真和实验对光束整形器进行了分析,研究表明整形器实现了半导体激光器线阵输出光束的对称化,并且光束经过透镜聚焦后对数值孔径为0.46,直径为200μm的光纤进行耦合,效率为53%。     

缺陷源摆动的对传波

基于流体力学方程组,对长高比Γ=30腔体内混合流体对流中缺陷源摆动的对传波的特性进行了数值模拟.结果发现,当分离比Ψ=-0.6时,缺陷源摆动的对传波的缺陷源由两个对流圈同时被拉长同时被分裂后形成.对传波的存在区间为Dr=0.198,对传波的摆动周期较小并且基本都稳定在T_o=4.8.对传波的摆动幅度较小并且几乎不随着相对瑞利数r变化.当Ψ=-0.2时,对传波的缺陷源下方対流圈轴线与缺陷源移动方向保持一致,没有对传波分支产生.对传波的缺陷源上方存在多个与缺陷源移动方向几乎垂直的対流圈的轴线,存在对传波分支,在对传波分支上出现间歇性的缺陷.从而形成具有单侧缺陷的缺陷源摆动的对传波.对传波的存在区间为Dr=0.16.对传波的摆动周期为To=65.9-85并且随着相对瑞利数的增加而增加.对传波的摆动幅度较大,并且随着相对瑞利数的增加而减小.