用符合计数研究“钚的质量属性”与“氧化钚不存在属性”

符合计数的测量量为总中子计数和符合计数，而未知量有（α，n）中子与自发裂变中子之比α、泄漏增殖系数M1以及钚-240的质量。符合计数与源中子泄漏复度分布的二阶矩成正比。对MCNP程序进行修改，加入自发裂变源与（α，n）中子源的跟踪功能，直接得到了中子泄漏复度分布的二阶矩。     

氚化钛中氦的热解析

氚以金属氚化物贮存形式过程中，会衰变生成氦-3，从而影响金属氚化物的使用性能。文中采用热解析方法研究了不同贮存周期氦在金属氚化物中的能量状态的变化情况。     

锂离子电池掺钴正极材料电子结构的DV-Xa研究

采用原子基表示的第一原理赝势方法，计算了正极材料LiMn2O4的电子结构，发现LiMn2O4的价带主要是由Mn(8)和Mn(9)的3d轨道和O(7)、O(6)、O(4)的2p轨道构成，导带主要是由Mn(8)和Mn(9)的3d轨道和O(7)的2p轨道构成．通过计算Li5Mn2C0O8的电子结构，发现在LiMn2O4中用钴离子取代16d位锰离子将使电极材料的费米能减小，放电电压降低；锂离子的净电荷增大，锂离子与氧离子的相互作用增强，可逆容量降低；同时由于价带宽度变窄，Co-O键间的相互作用比Mn-O键间的相互作用强，所以，结构稳定性增加，电极循环性能改善．     

Bichromatic Coherent Population Trapping Under Hanle Configuration

We report the observation of bichromatic coherent population trapping under the transition ^87 RbFg = 1 → Fc = 0 with two linearly polarized laser beams by means of a Hanle effect configuration. The mechanism behind this effect is identified, and numerical solutions for the pump rates equations are presented.     

Light Irradiation through Small Particles and Its Applications for Surface Nanostructuring in Near Field

We investigate the light scattering through small particles and its applications in nanostructuring, such as nanobumping, nanopatterning and dry laser cleaning. The theoretical calculation based on Mie theory provides an exact solution for sphere cavity resonance and plasmon resonance, which are two mechanisms for dielectric and metallic particles assisted surface nanostructuring in near field. The experimental results indicate that nanobumps on glass surface and subwavelength holes array on silicon surface can be formed without cracks with the self-assembly of 1 μm silica particle mask under laser irradiation. It is also found that the scattering wave by 40 nm gold particles can propagate 200 times away in terms of particle radius as recorded by photoresist under the UV light irradiation. Meanwhile, dry laser cleaning of 40nm gold particle on silicon wafer is demonstrated at plasmonic resonance frequency. The total cleaning efficiency is estimated to be 80%.     

感应耦合等离子体刻蚀在聚合物光波导制作中的应用

提出了利用感应耦合等离子体(ICP)刻蚀技术提高聚合物光波导器件性能的方法,介绍了ICP刻蚀技术的原理和优点。选取聚甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯(P(MMA-GMA))作为波导材料,采用氧气作为刻蚀气体,研究了ICP参数变化对刻蚀效果的影响。介绍了倒脊形光波导的制备过程,采用改变单一工艺参数的方法,分析了刻蚀效果随时间、功率、压强、气体流量等参数的变化,对参数优化后刻蚀得到的凹槽和平板结构进行了表征。实验结果表明:在天线射频功率为300 W,偏置射频功率为30 W,气体压强为0.5 Pa,氧气流速为50 cm³/min的条件下,可获得侧壁陡直、底面平整的P(MMA-GMA)凹槽结构。     

Temperature Controlled Filamentation in Argon Gas

Temperature controlled filamentation is experimentally demonstrated in a temperature gradient gas-filled tube. The proper position of the tube is heated by a furnace and two ends of the tube are cooled by air. The experimental results show that multiple filaments are shrunken into a single filament or no filament only by increasing the temperature at the beginning of the filament. This technique offers another degree of freedom of controlling the filamentation and opens a new way for intense monocycle pulse generation through gradient temperature in a noble gas.     

有机/无机复合功能材料倒脊型波导热光开关

利用溶胶-凝胶技术自主合成了一种具有优良光学特性和高热稳定性的有机/无机复合芯层材料.这种功能材料的分子中含有有机柔性侧链,可形成环氧交联.与无机SiO2-TiO2体系相比,具有较高的热光系数(量级为10-4/K),以及更好的成膜性和可加工性.通过与实验室自行配制的P(MMA-GMA)包层材料相匹配,设计制备了基于这种有机/无机复合功能材料的倒脊型波导马赫-曾德尔型热光开关.器件的波导与热电极性能良好.插入损耗为10dB,驱动功率15mW,开关时间小于1ms,消光比15dB.     

Photoluminescence Property of Co3O4 Nanowires

Co3O4 nanowire arrays are fabricated by electrodeposition with following heat-treatment in atmosphere ambient. Photoluminescence is investigated at 295K. In the experiment, when increasing the excitation light wavelength from 260 nm to 360 nm, two kinds of emissions corresponding to the increasing excitation light wavelength are observed. One of them alters the excited emission position, another keeps its emission position. The distinct behaviour of excited emissions related to the increasing excitation wavelength indicates that the mechanism of them must be different. According to the experimental comparison and first-principle calculation, the two kinds of emissions are discussed.     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.