On the interpretation of positron-annihilation data in powders and fine-grained materials

Monte-Carlo simulations of positron diffusion are carried out for powders consisting of spherical and ellipsoidal particles with and without defects. Following Bergersen et al. [1], elastic positron-phonon interaction is considered to be dominant for scattering processes in positron diffusion. The central question is which fraction of the positrons would be able to reach the particle boundaries. Hence, we calculate the Fraction of Positrons reaching particle Surface (FPS). The presence of defects in the particles can drastically reduce FPS depending on the defect concentration and capture rate. We demonstrate that for small-grained materials the grain surface can influence the lifetime signal significantly.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Hot atom chemistry of mixed cristals 35 years of research

A historical survey of the author's contribution to the progress of solid state hot atom chemistry including more personal commentaries is presented.Presented at the International Seminar on the Chemistry of High Energy Atoms, Tokyo Institute of Technology, Ookayama, Meguro-ko, Tokyo 152, Japan, October 28–30, 1992, organised by T. MATSUURA, Institute for Atomic Energy, Rikkyo University, Nagasaka, Yokosuka 240-01, co-editor of the Handbook of Hot Atom Chemistry. I thank Professor MATSUURA for the permission to publish my contribution to the seminar slightly modified compared with the version submitted in the seminar proceedings.     

AES-depth-profiling of thin annealed Pt-films on Si(100)

Thin PtSi films can be grown by evaporating Pt on Si(100) at RT and subsequent annealing of the system at 600–700 K. Contaminants like oxygen are known to have a strong influence on this reaction. In the present study we concentrate on the effect of oxygen partial pressure during the annealing on the silicide growth process. Under proper vacuum conditions annealing at 500 K leads to a homogeneous Pt₂Si film which reacts around 600 K completely to PtSi. A substantial oxygen partial pressure ( 0.1 mbar) in contrast results in an incomplete reaction in the same temperature range: unreacted platinum remains at the surface separated from the silicide by an oxygen enriched layer.Presented at the Seminar on Secondary Electrons in Electron Spectroscopy, Microscopy, and Microanalysis, Chlum (The Czech Republic), 21–24 September, 1993.This work was supported by Deutsche Forschungsgemeinschaft (DFG) through Sonderforschungsbereich 292.We thank Dr. W. Platz (Deutsche Aerospace AG, Ottobrunn) for providing us with Pt evaporated Si-wafers and Th. Hierl (Lehrstuhl für Angewandte Physik, University of Erlangen-Nürnberg), who performed the RBS measurements for AES calibration.