墙截面优化声学小房间低频响应的鲁棒性分析

改进了通过优化墙截面形状改善声学小房间低频响应的优化方法,实现了墙面阶梯形状宽度和深度同时优化。在60- 120 Hz频段对优化后房间频响随声源位置的鲁棒性进行了分析,并与未优化的房间比较。结果表明:对一个5×4.65×2.68 m³的小房间优化后,210个不同位置点声源所激励房间声场的频响标准偏差(SRD)平均值从未优化房间的9.66 dB下降为6.17 dB,频响最大偏离值(MD)平均值从未优化房间的41.27 dB下降为17.42 dB;SRD和MD值的标准差分别比未优化房间下降了44.8%和63.9%。证明了墙截面优化不仅能够使房间频响变好,而且小房间内频响对于声源位置的敏感程度也随着墙截面形状的优化而降低。通过运用优化的墙截面改善房间低频响应鲁棒性是有意义的。     

一种高压光学样品池系统的设计与实验研究

设计和研制了一种用于溶液样品光学特性原位检测的高压光学样品池成套系统,组件包括手动泵、增压器和高压样品池。其中样品池开有3处光学窗口,以水为传压介质,设计的最高使用压力为600MPa。当用JGS1石英作窗口时,密封和保压效果良好;由于受到石英材质强度的限制,使用压力应控制在300MPa以下。为检验该系统在高压原位检测方面应用的可行性,进行了色氨酸高压荧光光谱的采集。     

射流冲击模型在水下爆炸实验中的应用研究

 为研究射流冲击载荷对结构的作用效果,从理论和数值角度研究了射流的载荷特性,以舱段模型实验为研究对象,建立了射流计算模型,结合实验数据,对射流冲击问题进行了分析。结果表明,射流冲击能够造成结构强烈的局部响应,某些情况下,射流冲击载荷引起的结构响应甚至比冲击波载荷引起的响应更大。因此,中近场水下爆炸实验需要考虑射流的影响。建立的射流模型能够较好地反映射流冲击的载荷特性,为水下爆炸实验分析提供了一种新的手段。     

炸药安全性的火箭橇实验研究

 采用双轨火箭橇加载装置,对PBX-1炸药结构件进行了“靶打弹”撞击实验,采用PVDF计和压电石英计,测量炸药中入射压力和反应压力的变化情况;通过高速摄影和大画幅照相,观察了炸药件受撞击后发生反应的直观图像和靶、弹撞击的细节过程;利用冲击波超压传感器,测量了炸药反应后的超压曲线,并估算了其相对能量释放率。初步实验结果表明,当入射压力为0.48 GPa时,炸药发生部分爆炸,相对能量释放率约为51.8%。     

Mn3Zn0.8Ni0.2N的高压同步辐射研究

 利用金刚石对顶压砧,对钙钛矿型金属锰化物Mn₃Zn_0.8Ni_0.2N进行了原位高压同步辐射角散X射线衍射研究。研究表明,在0~29.9 GPa的压力区间内,样品没有发生结构相变,因而在该压力下样品的物性变化并非由结构相变所导致。卸压以后,样品的特征峰都回到了初始位置。通过Birch-Murnaghan方程,拟合得到了样品的体弹模量为86.5 GPa。     

铝热剂反应性冲击热点分析

 采用激光粒度扫描仪测量了二元混合物铝热剂（Al+Fe₂O₃）原料的粒径分布,在电子显微镜下观察了铝颗粒、氧化铁颗粒的颗粒形状及两者按照化学配比混合后的颗粒接触状态。综合粒径分布和反应体系的化学配比关系,得到两种反应物的特征粒径和混合物的颗粒布局。根据特征粒径和颗粒布局,建立了该反应体系的等效细观模型,该细观模型能够保证得到与实际颗粒体系相一致的具有统计意义的孔穴结构。采用无网格粒子方法,数值模拟了铝热剂体系在不同冲击速度作用下,基本氧化铁颗粒排列形成的热点特征。研究表明,氧化铁三颗粒紧密排列的模式为形成单独热点的最基本排列,在平面冲击作用下,二元不同粒径的含能材料混合物形成热点的尺寸由初始孔穴尺寸确定,而热点温度受冲击速度影响较大。采用轻气炮对不同密度和配比的铝热剂进行了冲击点火实验,并将测量和数值计算结果进行了对比分析,结果表明,两者的定性结论吻合较好。     

Longitudinal,transverse,density-of-states,and conductivity masses of electrons in（001）,（101） and（111） biaxiallystrained-Si and strained-Si1-xGex

In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and Si1-xGex.It is found that the effect of strain on the longitudinal and transverse masses can be neglected,that the density-of-states masses in(001) and(110) biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction(x),and that the conductivity masses along typical orientations in(001) and(110) strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.     

EXPERIMENTAL STUDY ON THE SELF-MODE-LOCKED Ti:SAPPHIRE LASER

The role of gain aperture in self-mode-locked Ti:sapphire laser was verified in our experiments. The observation of self-Q switching of self-mode-locked Ti:sapphire laser is reported. And tuning pulse duration from 50fs to 14.5ps was achieved.     

DISTORTED WAVE-WAVE PACKET APPROACH TO VIBRATIONAL DEACTIVATION OF DIATOMIC MOLECULE BY COLLISIONS WITH SOLID SURFACE

A model is proposed for vibrational dexcitation of diatomic molecule by collisions with a solid surface, and used to predict the rotational and translational energy distributions and other properties of interest. It is found that molecular rotation dominates over translation in receiving the vibrational energy released, even for the heavier diatomic molecules.     

PULSED LASER DEPOSITION AND CHARACTERIZATION OF FERHOELECTHIC Pb(Zr, Ti)O3 THIN FILMS ON SILICON-ON-INSULATOR SUBSTRATES

Ferroelectric Pb(Zr, Ti)O₃ thin films were prepared by pulsed exeimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was per-formed to crystallize the films, Based on the analysis by X-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with P_r=15μC/cm², E_c= 50kV/cm, high resistivity and high dielectric constant.