Mean Value on the Difference Between a Quadratic Residue and Its Inverse Modulo p

The main purpose of this paper is to use the generalized Bernoulli numbers, Gauss sums and the mean value theorems of Dirichlet L-functions between a quadratic residue and its inverse modulo p value formula. to study the asymptotic property of the difference （a prime）, and to give an interesting hybrid mean     

Poly[[diaqua(N,N‐dimethylformamide‐κO)manganese(II)]‐μ3‐sulfato]

In the title complex, [Mn(SO₄)(C₃H₇NO)(H₂O)₂]_n, each Mn^II ion has a distorted octahedral geometry formed by three O atoms of three different sulfate groups, one O atom of a dimethylformamide ligand and two water molecules. The sulfate groups act as tridentate bridging ligands connecting the Mn^II ions into a two‐dimensional layer structure which can be regraded as a 4.8² network.     

早期火灾图像监测技术的应用与比较

本文对可提供图像信息的火灾物理现象进行了具体分析，讨论了利用摄像技术进行早期火灾探测的可能性、使用条件以及图像监测技术在火灾探测中的地位和作用，进行了若干种图像监测技术的对比实验，得出了相应的结论。     

化学发光分析法测定绿原酸

本文基于碱性介质中绿原酸对鲁米诺-铁氰化钾化学发光体系的抑制作用,首次建立了绿原酸的化学发光分析法,并探讨了其作用机理。方便简便、迅速、重复性好、灵敏度高。采用该法可测定1.0×10-8g/ml～1.0×10-5g/ml范围内的绿原酸,其检出限达到5.2×10-9g/ml,回收率为104%.     

MOCVD生长的GaN单晶膜透射光谱研究

采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜，使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品，实验结果表明：GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致，即透射率越大，半高宽越小，结晶质量越好；而X射线双晶衍射峰半高宽最小的样品，其PL谱的带边峰却很弱，这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系，同时还报导了一种特殊工艺生长的高阻GaN样品的RBS／沟道结果。     

锰(Ⅱ)-高碘酸钾-灿烂绿体系测定水中痕量锰

在 HAc- Na Ac环境中 ,锰 ( )对于高碘酸钾氧化灿烂绿的反应具有很强的催化作用。据此 ,建立了催化动力学光度法测定痕量锰 ( )的新方法。该方法的检出限为 2 .2 2× 10 -11g/ m L ,测定线性范围为0 .1— 12 ng/ m L。直接用于环境水样中锰的测定 ,获得满意的结果     

von Neumann代数中套子代数上的Lie同构

本文给出因子von Neumann代数中的幂等算子在广义Lie积下的一个刻画; 得到因子von Neumann代数中套子代数的幂等算子在Lie积下的一个特征．作为应用, 研究了因子von Neumann代数中套子代数上的Lie同构,并证明因子von Neumann 代数中套子代数之间的Lie同构,要么是同构与广义迹之和,要么是负反同构与广义迹之和．     

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.