On theta pairs for a maximal subgroup

For a maximal eubgroup M of a finite group G, a 8-pair is any pair of subgroups (C,D) of G such that (i) D?G, D≤C, (ii) - G, - M and (iii) C/D has no proper normal subgroup of G/D. A partial order may be defined on the family of 8-pairs. Let △(M) - {(C,D)|(C,D) is a maximal 8-pair and CM - G}. The purpose of this note is to prove: (1) A group G is solvable if and only if, for each maximal subgroup M of G, △(M) contains a 8-pair (C,D) such that C/D ie nilpctent. (2) If a group G is S₄-free, then G ia eupersolvable if and only if, for each maximal subgroup M of G, △(M) contains a 8-pair (C,D) auch that C/D is cyclic     

光学补偿LD侧向非均匀泵浦全固化激光器

采用定向棱镜谐振腔、半圆柱面LD阵列交错侧向泵浦两根串接NdYAG激光棒、热传导冷却结构,研制出了一台工程实用的全固化激光器.定向棱镜腔内振荡光线平行于光轴的对称位置交换穿行,匀化了增益,降低了模序数;同时,定向棱镜准相位共轭特性和自准直作用在一定程度上修正波前畸变、热光楔以及热致双折射,保证了大的动态范围内热稳定性,改善了光束质量.激光器采用Cr4+YAG被动调Q,在室温条件下,工作电流为53 A、频率10 Hz时,1.06 μm单脉冲激光能量高于150 mJ、脉宽9 ns、输出稳定度±3%、束散度2.5 mrad且光轴指向稳定,远场分布近似相干平顶高斯光束.     

熔石英相位共轭镜无损工作状态分析

基于非线性光学耦合波方程组建立了聚焦泵浦条件下熔石英玻璃材料中SBS过程的物理模型并编制了相应的数值求解程序,研究了SBS介质内激光场的时空发展特征,从而试图揭示SBS介质的内在破坏机制并寻求相应的加固措施.通过数值模拟程序研究了焦点处激光功率密度以及SBS反射率与激光能量的依赖关系,发现SBS对介质内的激光场具有"限幅"作用,即在注入能量大幅度提升的情况下,内部的激光场强度只有较小的增加,这种机制使大能量的固体介质PCM成为可能.分析激光脉宽以及耦合透镜焦距等参数对SBS过程的影响发现,精细选择系统参数,在熔石英玻璃材料中有可能无损伤地实现高效的SBS过程.     

油砂开发经济性评价方法研究及应用

随着我国油企进入加拿大油砂行业,如何降低油砂开发项目的风险并提高决策的科学性变得愈发重要。油砂开采的经济性作为投资决策的重要着力点,研究相应的经济评价方法也就有了十分重要的意义。本文较为全面的分析了露天开发油砂及蒸汽辅助重力卸油技术(SAGD)开发油砂的技术特点;选择折现现金流理论作为理论基础分别构建了露天开发与SAGD开发油砂项目经济评价模型,并对模型中涉及的收入、投资、成本等参数的估算方法进行了系统的研究;通过对新疆某油砂试采区的实际评价,验证了方法的可行性。该方法作为油砂开发项目经济评价的初步探索,将为加拿大和我国油砂开发项目的经济评价工作提供一定的参考依据。     

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There're about 10^{11} neurons in the human brain.Through the synaptic junction, neurons have formed a highly complex network.And it is really important to figure out the information expressed in the network, which will contribute to the resolution of the prevention and diagnosis of cognitive disorder of human beings. This paper uses the schizophrenia and healthy controlled subjects' fMRI data to construct the brain network model, in order to explores abnormal topological properties of schizophrenics' brain network based on graph theory. When studying the human brain network information traditionally by the basement of graph theory, it's all assure that the human brain network model has invariance, so it takes the whole period of time series data in constructing human network model, which is a kind static network. However, it's hard to ensure this because of the nonstationarity of fMRI functional time series data. Thus, when constructing human brain network model, we should take its time-variation into consideration, then construct a dynamic brain network. We can explore the brain network information better. In this research, we segment the time series data, using time windows, to constructing dynamic brain network model, then analyze it combined with the knowledge of graph theory, thereby reducing effects that the nonstationarity of fMRI functional time series data will have. Comparing dynamic brain network of the schizophrenic patients with normal controls subjects' in different level, the results show that there are difference in single node property, group network property of schizophrenic patients and normal control subjects' whole brain dynamic functional connectivity network. The discovery of these difference in network topological properties has provide new clues for the further study on the pathological mechanism of schizophrenia.     

连续变量量子离物传态的实验研究

利用单个Ⅱ类相位匹配OPA产生的双模压缩态实现连续变量压缩纠缠态，完成了连续变量量 子离物传态. Ⅱ类相位匹配OPA参量反放大过程可以实现正交振幅反关联、正交位相关联的 压缩纠缠态，这不同于一般运转于阈值以下的OPO产生的正交振幅关联、正交位相反关联的 压缩纠缠态，可以采用直接平衡测量的方法完成Bell态测量. 利用双KTP补偿非线性过程的 离散效应，获得了最大压缩大于2dB的双模压缩纠缠态，实现保真度06，考虑到探测效率 实际保真度为057. 这种方案简化了测量方法与纠缠光源产生装置，有利于进行量子通信 的实验研究与应用. 同时，讨论了探测过程中的一些非理想因素. 关键词： 量子离物传态 压缩纠缠态 Bell态测量     

Relativistic Mean Field Study of the Z=117 Isotopic Chain

The properties of the Z = 117 isotopic chain are studied within the framework of the axially deformed relativistic mean field theory （RMFT） in the blocked BCS approximation. The ground-state properties, such as hinging energies, deformations as well as the possible α decay energies and lifetimes are calculated with the parameter set of NL-Z2 and compared with results from the finite range droplet model. The analysis by RMFT shows that the isotopes in the range of mass number A =291 ~ 300 exhibit higher stability, which suggests that they may be promising nuclei to be hopefully synthesized in the lab among the nuclei Z = 117.     

Elevation of the Power Factor of Co4Sb12 Skutterudite with Sm-Doping in High-Pressure High-Temperature Synthesis

A thermoelectric material Smx Co4Sb12 （0（ x ≤1.0） is synthesized at high pressure and high temperature leading to an enhanced power factor. The experimental measurements show that the SmxCo4Sb12 compounds exhibits n-type conduction. The absolute value of the Seebeck coefficient decreases with increasing Sm fraction. The resistivity increases with samarium content x from 0.1 to 0.2, but decreases dramatically when x changes from 0.2 to 1.0. The maximum power factor reaches 13.1 μW.cm^-1K-2 at x =1.0, which is larger than the data previously reported for the La-doped CoSb3 prepared at room pressure.     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

Determination of the ~(12)C(p, γ)~(13)N reaction rates fromthe ~(12)C(~7Li,~6He)~(13)N reaction

The angular distribution of the 12C(7Li,6He)13N reaction at E(7Li) = 44.0 MeV was measured at the HI-13 tandem accelerator of Beijing, China. The asymptotic normalization coefficient (ANC) of 13N → 12C + p was derived to be (1.64 ± 0.11) fm-1/2 through the distorted wave Born approximation (DWBA) analysis. The ANC was then used to deduce the astrophysical S (E) factors and reaction rates for the 12C(p,γ)13N direct capture reaction at energies of astrophysical relevance.