泡沫镍衬底上生长二氧化锡纳米线的生长行为及光致发光性能研究

采用热蒸发法,在镀有Au(金)的多孔泡沫镍基底上生长了SnO2纳米线,生长温度分别为750℃、800℃和850℃,分别利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)研究了生长温度对纳米线生长行为的影响,采用X射线光电子能谱仪(XPS)研究了样品的元素结合态,采用荧光光谱仪研究了样品的室温光致发光(PL)性能.结果证明,生长温度对SnO2纳米线形貌、尺寸、密度等形态学特征影响显著.在750℃下,SnO2为颗粒状;800℃生成了较高密度的SnO2纳米线,且随温度升高纳米线产量增加、直径显著增大;在850℃下其直径增大至微米级.对室温光致发光性能的研究发现,随生长温度升高,在SnO2产量增加和氧缺陷浓度的提高的共同作用下,导致其发光性能随之显著提高.     

126Ce的EC/β+衰变

利用187 MeV的40Ca离子轰击同位素靶92Mo, 由熔合蒸发反应生成目标核126Ce。 藉助氦喷嘴快速带传输系统和X-X-t与X-γ-t符合测量, 首次建立了126Ce的EC/β+衰变纲图。 建议了可能属于126Ce一个高自旋同核异能态的衰变, 其β衰变后布居在与126La的高自旋同核异能态相关的低位能级区, 测定的半衰期是57(9) s。 也建议了可能属于126Ce基态的衰变, 其β衰变后布居在与126La的低自旋同核异能态相关的低位能级区,它的半衰期被测定为12(4) s。 但偶偶核126Ce存在高自旋同核异能态的物理原因还有待进一步探究。 Ce was produced by bombarding an enriched target of 92Mo with 187 MeV 40Ca beam and studiedby using a helium jet fast tape transport system in combination with X-γ and γ-γ coincidencemeasurements. An EC/β+ decay scheme of 126Ce was proposed for the first time. A group of low lying states associated with the low spin isomer in 126La feeding by β decay was possibly from the ground state EC/β+ decay of 126Ce with the measured half-life 12(4) s. Another group of low lying states associated with the high spin isomer in 126La feeding by β decay was possibly from a high spin isomer EC/β+ decay of 126Ce with the measured half-life 57(9) s. However, the physical reason for the existence of a high spin isomer in even-even nucleus 126Ce is still an open problem.     

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.     

纳米MgBO_2(OH):Eu~(3+)的制备及发光性能研究

利用水热法,制备得到了纳米线组装的绒球状和纳米带聚集的絮状Mg BO2(OH):Eu3+,对它们进行了EDS、XRD、IR、SEM等表征及发光性能研究。研究发现两个产品的最高激发峰和发射峰分别都位于λ=250nm和λ=615nm处,为红色发光材料;且发现绒球状Mg BO2(OH):Eu3+的峰强度明显强于絮状Mg BO2(OH):Eu3+,但絮状Mg BO2(OH):Eu3+的红橙比(R/O)更高。     

分子印迹电化学传感器同时测定尿液中多巴胺和抗坏血酸

制备了同时检测多巴胺(DA)和抗坏血酸(AA)的分子印迹电化学传感器。该传感器以酸性铬蓝K(ACBK)为功能单体,DA/AA为模板分子,利用电化学聚合方法在电极表面合成分子印迹聚合物膜,根据DA和AA产生的氧化电流,利用差分脉冲伏安法实现DA和AA的同时测定,且DA和AA的氧化峰电位分开近300 m V。DA和AA检测限分别达6.20×10-11mol/L和1.65×10-8mol/L。传感器可应用于人尿液中DA和AA的测定。     

Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs

Amorphous indium-gallium-zinc oxide (a-IGZO) thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor (TFT) devices. In-situ x-ray photoelectron spectroscopy (XPS) illustrates that weakly bonded oxygen (O) atoms exist in a-IGZO thin films deposited at high O₂ pressures, but these can be eliminated by vacuum annealing. The threshold voltage (V_th) of the a-IGZO TFTs is shifted under positive gate bias, and the V_th shift is positively related to the deposition pressure. A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the V_th shift, which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films. Accordingly, the V_th shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO₂ interface under positive gate bias. These results provide an insight into the mechanism responsible for the V_th shift of the a-IGZO TFTs and help in the production of reliable designs.     

Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

A comparative study of two kinds of oxidants(H2O and O3) with the combinations of two metal precursors [trimethylaluminum(TMA) and tetrakis(ethylmethylamino) hafnium(TEMAH)] for atomic layer deposition(ALD) hafnium aluminum oxide(HfAlOx) films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.     

不同加料方式对共沉淀法制备YAG纳米粉体的影响

用共沉淀法制备了钇铝石榴石(Y3Al5O12)纳米粉体,研究了正滴定、反滴定和一步注入工艺对钇铝石榴石纳米粉体合成过程及最终产物的影响。利用X射线衍射仪、傅立叶红外光谱仪、同步热分析仪、场发射电子显微镜对YAG前驱体及不同温度煅烧后的粉体进行表征。结果表明:通过正滴定、反滴定和一步注入工艺,分别制备出化学组成为10[8.9Al(OH)3+1·1NH4Al·(OH)2CO3]·3[Y2(CO3)3·3H2O]、10[7.3Al(OH)3+2.7NH4Al·(OH)2CO3]·3[Y2(CO3)3.3H2O]、10[Al(OH)3]·3[Y2(CO3)3·3H2O]的前驱体。前驱体经900℃煅烧2 h后,正、反滴定工艺得到的粉体主相为YAG(Y3Al5O12),但有少量的YAP(YAlO3),一步注入工艺则得到纯的YAG相。晶粒尺寸分别为85 nm、70 nm和65 nm,且一步注入工艺获得的粉体粒径分布较窄,分散性良好。     

Identification of a 9/2~-[505] isomer in the neutron-rich ~(193)Os nucleus

The neutron rich nucleus ¹⁹³Os was produced in the ¹⁹²Os(⁷Li, ⁶Li)¹⁹³Os reaction. An isomeric state based on the 9/2^-[505] Nilsson orbital was identified in the present work. The half-life of the isomeric state was extracted and discussed in terms of the K quantum number. A level scheme built on the isomeric state was proposed based on the experimental data.     

三角代数上的广义Jordan导子

主要研究了三角代数上的广义Jordan导子．利用三角代数上广义Jordan导子和广义内导子的联系．证明了作用在一个含单位元的可交换环上的三角代数到其自身上的环线性广义Jordan导子是一个广义导子．