电子束蒸发制备ZnO薄膜及其晶体结构和电学性质

采用电子束蒸发法制备了ZnO薄膜。研究了退火温度及衬底对薄膜的结晶状况以及电学性质的影响．X射线衍射测试结果表明。相同蒸发条件下制备的ZnO薄膜，硅(100)衬底上薄膜晶粒尺寸为73nm。结晶情况明显好于陶瓷和玻璃衬底上的薄膜．退火之后，各种衬底上薄膜的结晶情况相对未退火时都有明显好转；400℃退火时。薄膜逐渐结晶；600℃退火时，ZnO薄膜体现良好的择优生长的趋势，晶粒长大，晶化程度提高，大部分晶粒发生了织构．在400℃退火后。掺入Al2O3的薄膜和未掺杂的ZnO薄膜的电阻率下降了一个多数量级，但掺入MgO的薄膜电阻率变大。这是由于MgO掺杂起到了补偿作用，掺入MgO有可能实现ZnO薄膜的P型掺杂．     

Recent advances of interface engineering in inverted perovskite solar cells

Perovskite solar cells (PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n—i—p structure of PSCs with ultra-high efficiency. While the n—i—p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMeTAD, which affect the long-term stability. The inverted device with the p—i—n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs.     

126Ce的EC/β＋衰变

利用187 MeV的40Ca离子轰击同位素靶92Mo,由熔合蒸发反应生成目标核126Ce。藉助氦喷嘴快速带传输系统和X-X-t与X-γ-t符合测量,首次建立了126Ce的EC/β＋衰变纲图。建议了可能属于126Ce一个高自旋同核异能态的衰变,其β衰变后布居在与126La的高自旋同核异能态相关的低位能级区,测定的半衰期是57（9）s。也建议了可能属于126Ce基态的衰变,其β衰变后布居在与126La的低自旋同核异能态相关的低位能级区,它的半衰期被测定为12（4）s。但偶-偶核126Ce存在高自旋同核异能态的物理原因还有待进一步探究。     

A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

We investigate the influence of voltage drop across the lightly doped drain(LDD) region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson’s equation in the silicon and gate dielectric layers.The model can predict the fringing-induced barrier lowering effect and the short channel effect.It is also valid for non-LDD MOSFETs.Based on this model,the relationship between threshold voltage roll-off and three parameters,channel length,drain voltage and gate dielectric permittivity,is investigated.Compared with the non-LDD MOSFET,the LDD MOSFET depends slightly on channel length,drain voltage,and gate dielectric permittivity.The model is verified at the end of the paper.     

Electric-dipole transitions in ^165Er

High-spin states of ^165Er were studied using the ^160Gd（^9Be, 4n）reaction at beam energies of 42 and 45 MeV. The previously known bands based on the ν5/2^-[523] and ν5/2^＋[642] configurations have been extended to high-spin states. Electric-dipole transitions linking these two opposite parity bands were observed. Relatively large B（E1） values have been extracted experimentally and were attributed to octupole softness.     

Properties of the β-delayed proton decay of 146Ho

The proton-rich isotope 146Ho was produced via the fusion-evaporation reaction ^92Mo （^58Ni, 3p1n）. The β-delayed proton decay of 146Ho was studied by proton-γ coincidence measurements using a He-jet tape transport system. The γ-transitions in ^145Tb following the proton emissions were observed, and the β-delayed proton branching ratios to the final states in the grand-daughter nucleus ^145Tb were determined. According to the relative branching ratios, the ground-state spin of 146Ho has been proposed and the possible configuration discussed.     

Calculation of the surface energy of fcc metals with modified embedded-atom method

The surface energies for 38 surfaces of fcc metals Cu, Ag, Au, Ni, Pd, Pt, A1, Pb, Rh and Ir have been calculated by using the modified embedded-atom method. The results show that, for Cu, Ag, Ni, A1, Pb and Ir, the average values of the surface energies are very close to the polycrystalline experimental data. For all fcc metals, as predicted, the close-packed (111) surface has the lowest surface energy. The surface energies for the other surfaces increase linearly with increasing angle between the surfaces (hkl) and (111). This can be used to estimate the relative values of the surface energy.     

吉林省社会收入分配不等性分析

本文简明地介绍了社会收入分配不等性分析的统计模型──洛伦茨曲线和基尼系．并使用该模型计算了吉林省１９８５～１９８８年社会收入分配的基尼系数，以此对该省社会收入分配不等性的程度做出了判断．     

改善硅基功率晶体管电流放大倍数高低温变化率的工艺研究

依据功率晶体管电流放大倍数高低温变化率的实际电参数指标要求,利用TCAD半导体器件仿真软件和晶体管原理对其进行深入的分析.结果表明,针对较大测试电流、较高电流放大倍数的功率晶体管,在一定程度上降低发射区掺杂浓度、提高基区掺杂浓度可有效改善电流放大倍数的高低温变化率.并在一定的发射区表面浓度和基区表面浓度下,通过优化发射区结深和基区宽度可满足常温电流放大倍数的指标要求.结合仿真研究结果,通过实际流片,对关键的工艺进行工艺攻关.流片结果表明,采用降低发射区掺杂浓度并提高基区掺杂浓度的工艺方法,电流放大倍数高低温变化率得到有效改善,并能控制其他参数实测值满足设计要求.     

“测不准原理”的多课程融合教学实践

本文使用相同的数学方法对多个课程中测不准原理进行推导证明,并着重分析和比较了多个测不准原理研究对象、物理意义的区别与联系．