Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

High－Power Blue Light Generation by External Frequency Doubling of an Optical Parametric Oscillator ＊

We report on an all-solid-state high-power quasi-continuous blue light source by the frequency doubling of asignal wave from an optical parametric oscillator (OPO). A 50-mm-long LiB305 (LBO) crystal is used for theOPO, which is pumped by a diode-pumped Nd:YAG green laser (1OkHz, 50ns). Tunable blue emission in a newnonlinear crystal BiB306 (BiBO) is obtained with a wavelength range from 450 to 495 nm. The average power ofthe signal output is as high as 9.3 W from 924 to 970nm. The maximum output of the blue laser with the secondharmonic walk-off compensation is 1.3W average power at 470nm for 6.2W of OPO signal light at 940nm.     

超短超强激光脉冲辐照超薄碳膜电离状态研究

为了进一步理解极端条件下物质的电离特性, 特别是超短超强激光脉冲辐照超薄靶时等离子体的形成与分布, 本文以超薄碳膜为例, 细致研究了超短超强激光脉冲辐照下原子的离化过程. 分析和比较了强激光场直接作用电离和靶内静电场电离等两种场致电离形式, 在碰撞电离可以忽略的情况下, 发现更多的电离份额是来自靶内静电场的电离方式. 研究了激光脉冲强度对电离的影响, 发现激光脉冲强度越强, 电离速度越快, 产生的高价态离子所占比例也越高.当激光强度为1×10²⁰ W/cm²时, 尽管该强度高于电离生成C⁺⁶所需要的激光强度阈值, 但该激光脉冲并不能将整个靶电离成C⁺⁶离子, 对此本文进行了详细的分析. 在研究激光脉冲宽度的影响时, 发现激光脉宽越小, 电离速度越快, 但越小的激光脉冲电离获得的高价态离子越少.     

基于临界电子密度的多载波微放电全局阈值分析

多载波微放电即发生在宽带、大功率真空无源微波部件中的二次电子倍增放电现象, 是影响空间和加速器应用中无源微波部件长期可靠性的主要隐患. 多载波微放电全局阈值功率的预测对于工作在真空环境中的微波部件至关重要, 但迄今尚无有效方法进行上述阈值的准确分析. 本文将微放电发生过程中二次电子分布区域等效为等离子体, 通过在理论上建立微波部件的电磁特性和电子密度间的对应关系, 提出了一种基于测试系统可检测水平的多载波微放电全局阈值功率分析方法. 为了能够通过蒙特卡罗优化方法得到全局阈值, 进一步基于电子加速的类半正弦等效, 提出了微放电演化过程中电子数涨落的快速计算方法. 基于以上两种方法得到的针对实际微波部件的全局阈值分析结果与实验结果相符合. 不同于传统基于多载波信号功率分析的经验方法, 本文基于临界电子密度判断依据和电子数涨落快速计算, 为多载波微放电全局阈值的准确预测提供了一种高效的分析方法.     

硅基掺锰富硅氧化硅薄膜的电致发光

硅光子学中的关键问题是研制高效率的硅基光源,文章为此提出了一种实现硅基发光的方法。采用共溅射的方法在n＋型重掺杂硅衬底上制备了富硅氧化硅（SiO2∶Si）薄膜,然后用热扩散法进行了锰（Mn2＋）掺杂和光学活化。高分辨透射电镜观察表明薄膜中形成了3～5 nm的硅纳米晶体。该薄膜在紫外光照射下发射出明亮的绿光,光致发光谱峰位在524 nm（2.36 eV）,一般认为这是来自Mn2＋能级4T1 →6A1基态跃迁的绿光辐射;其荧光寿命为0.8 ms。将该掺锰富硅二氧化硅（SiO2∶Si∶Mn2＋）做成电致发光结构,在低反偏电压下观察到近乎白色的电致发光（EL）,光谱范围覆盖了400～800 nm。研究表明,该电致发光谱来源于薄膜中的Mn2＋以及氧化硅中的缺陷发光中心两者光谱的叠加;Mn2＋的发光是靠薄膜中的热电子来激发的;并由此探讨了薄膜中的硅纳米晶体在电致发光过程中的作用。     

基于剪纸方法的一种可重构线极化转换空间序构超表面

随着智能技术的发展, 具有可调的电磁波极化转换器件对于实际应用来说至关重要. 目前大多数基于PIN二极管、变容二极管来实现电可调, 这些方法操作简单、实时性强, 但仍存在平面序构调控自由度少、电路复杂、成本较高等问题. 鉴于此, 本文提出了一种基于剪纸结构的可重构极化转换超表面, 通过调节折叠角度b改变磁偶极子之间的相...     

Analysis of secondary electron emission using the fractal method

Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1 × 10^-7, the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1 × 10^-7,the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then,the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D,the higher the multipactor threshold.     

12C+28Si反应全熔合激发函数测量

我们用ΔE-E计数器望远镜系统测量了入射能E_Lab在43MeV—70.5MeV范围内¹²C+²⁸Si全熔合反应的激发函数. 实验激发函数显示出某种宽振荡结构, 宽度约为2—3MeV. 对其平均行为分别用Glas-Mosel模型和势模型进行了理论拟合. 在E_cm=35—50MeV范围内, 临界距离模型和统计Yrast线模型满意地复现了实验数据.     

喷雾火焰中液滴尺寸的测量及研究

一、引言 为了从理论上计算预报喷雾火焰中的液滴尺寸,研究者们提出许多描述喷雾中液滴的蒸发、着火和燃烧的模型。这些模型大致可分两类:一类是修正后的经典模型,以单个油滴为分析对象,其蒸发模型是液滴尺寸的减小遵从直径平方规律;另一类是以液滴群为对象,考虑液滴之间的相互作用,从而列出一系列数理方程。