1.064 μm脉冲激光作用下SiO2薄膜纹波损伤的模拟

用1.064 μm波长的单脉冲(6 ns)激光对K9玻璃基底上电子束沉积的单层SiO2薄膜进行了辐照损伤实验。以扫描电镜对K9基底的断面进行分析,并采用表面热透镜装置对膜层中的缺陷进行了检测,最后采用Matlab偏微分工具箱对缺陷的散射光光场进行了有限元模拟。实验研究表明：膜层中存在缺陷,基底中也存在大量缺陷。模拟研究表明：缺陷的位置越深,形成的条纹间距也越宽;当缺陷的形状不规则时,在局部出现近似平行的纹波结构;当缺陷的数目增加时,这些缺陷的散射光的叠加就形成相互叠加的条纹。     

ZnO基紫外探测器研究进展

近年来,直接带隙宽禁带半导体ZnO（3.37 eV）以其优越的光电特性而成为紫外探测领域研究中的新热点.文章介绍了不同类型的ZnO基紫外光敏探测器的结构和性能,并对ZnO基紫外光敏探测器的最新研究进展和应用前景进行探讨和展望.     

钴掺杂二氧化锡纳米粉的光致发光和磁学性质

研究了钴掺杂对二氧化锡纳米粉的光致发光性质和磁学性质的影响,发现钴掺杂对发光带的位置影响很小,但紫外发光带与蓝色发光带的强度之比随掺杂含量的增加而下降.当钴掺杂含量达到0.02时,样品中的铁磁性被完全破坏.讨论了样品中的磁相互作用的机理,认为掺杂离子的不均匀分布、自旋极化子与掺杂离子之间的耦合都可能导致反铁磁性的相互作用,这种反铁磁性的作用破坏了铁磁性. 关键词： 钴掺杂二氧化锡 光致发光 磁学性质     

熔石英表面损伤修复点的损伤概率

针对3个光斑尺寸的CO2激光辐照尺寸小于400 m损伤点后得到的修复点,从4个方面对损伤修复点经355 nm激光辐照后的损伤概率分别进行研究。结果表明,根据修复光斑尺寸或损伤点尺寸分别讨论修复点的损伤概率,更能反映修复点的抗激光损伤能力。通过分别讨论可以看出,采用小光斑CO2激光辐照损伤点或者修复尺寸小于200 m的损伤点,修复成功率超过90%。同时,可以通过损伤修复点的激光损伤阈值都服从正态分布的规律来预测修复点的损伤概率。

     

Fabrication processing effects on the microstructure and morphology of erbium film

The effect of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). All the erbium films are grown by electron-beam vapor deposition (EBVD). A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200°C have (002) preferred orientation, and the films deposited at 450°C have a mixed (100) and (101) texture, due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum (FWHMs) of erbium diffraction lines (100), (002), and (101) shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth films, and is counteracted by the tensile stress formed during the process of temperature cooling to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of the substrate-film couple.     

CO2激光局域辐照对熔石英损伤特性的影响

研究了CO₂激光局域辐照对熔石英损伤特性的影响, 发现当辐照中心温度较低时(1139 K), 辐照对损伤阈值没有明显影响, 但辐照中心温度较高时(1638 K), 辐照对损伤阈值有明显的影响, 损伤阈值随距离辐照中心间距的增大而减小, 在残余应力产生光程差最大处附近, 损伤阈值降到最小, 随着与辐照中心间距的进一步增加, 损伤阈值略有上升. 对导致此现象的原因做了分析. 由于残余应力的存在, 在辐照中心发生再损伤产生的裂纹后, 裂纹先沿径向扩展, 在残余应力产生光程差最大处附近, 裂纹转而向切向扩展, 这可能与径向和环向张应力随半径的变化有关. 在采用热处理炉退火消除残余应力时, 必须注意元件的洁净处理, 否则退火会出现析晶现象, 对损伤阈值和透射率造成不良影响. 关键词： 2激光局域辐照')" href="#">CO₂激光局域辐照 熔石英 损伤特性     

熔石英亚表面划痕激光诱导损伤阈值实验研究

 用原子力显微镜和光学显微镜观测酸蚀后熔石英亚表面划痕,并根据形貌特征将其分为Boussinesq-point-force crack(BPFC)、Hertzian-conical scratch(HCS)和Plastic indent(PI)三类,测试了各类划痕的损伤阈值,讨论了激光损伤机制。结果表明锐度较大的BPFC损伤阈值不超过2.0 J/cm<>2;深度小于1 μm的 HCS阈值可达2.6 J/cm²;形变较大的PI阈值至2.8 J/cm2,形变较小的PI的激光损伤阈值与无缺陷材料相当。BPFC 和深度超过1 μm的HCS是导致熔石英损伤阈值低的主要因素。     

物理法和化学法制备的单层ZrO2膜的激光损伤行为差异

 分别采用电子束热蒸发技术和溶胶-凝胶技术在K9基片上镀制了光学厚度相近的ZrO₂单层薄膜,测试了两类薄膜的激光损伤阈值。分别采用透射式光热透镜技术、椭偏仪、原子力显微镜和光学显微镜研究了两类薄膜的热吸收、孔隙率、微观表面形貌、激光辐照前薄膜的杂质和缺陷状况以及激光辐照后薄膜的损伤形貌。实验结果表明：两类薄膜的不同损伤形貌与薄膜的热吸收与微观结构有关， 物理法制备的ZrO₂膜结构致密紧凑，膜层的杂质和缺陷多；化学法制备的ZrO₂膜结构疏松多孔，膜层纯净杂质少，激光损伤阈值达26.9 J/cm²；因物理法制备的ZrO₂膜拥有更大的热吸收(115.10×10^-6)和更小的孔隙率(0.20)，其激光损伤阈值较小(18.8 J/cm²)，损伤主要为溅射和应力破坏，而化学法制备的ZrO₂膜的损伤主要为剥层。理论上对实验结果进行了解释。     

The effect of Si content on the martensitic transfor-mation temperature of Ni55.5e18Ga26.5-xSix alloys

This paper investigates the effects of substitution of Si for Ga on the martensitic transformation behaviours in Ni-Fe-Ga alloys by using optical metallographic microscope and differential scanning calorimetry (DSC) methods. The structure type of Ni_55.5Fe₁₈Ga_26.5-xSi_x alloys is determined by x-ray diffraction (XRD), and the XRD patterns show the microstructure of Ni-Fe-Ga-Si alloys transformed from body-centred tetragonal martensite (with Si content x = 0) to body-centred cubic austenite (with x = 2) at room temperature. The martensitic transformation temperatures of the Ni_55.5Fe₁₈Ga_26.5-xSi_x alloys decrease almost linearly with increasing Si content in the Si content range of x ≤ 3. Thermal treatment also plays an important role on martensitic transformation temperatures in the Ni-Fe-Ga-Si alloy. The valence electronic concentrations, size factor, L2₁ degree of order and strength of parent phase influence the martensitic transformation temperatures of the Ni-Fe-Ga-Si alloys. An understanding of the relationship between martensitic transformation temperatures and Si content will be significant for designing an appropriate Ni-Fe-Ga-Si alloy for a specific application at a given temperature.     

含胺基功能性单体的聚合研究 XIV.含二甲氨基丙烯酰类衍生物与过硫酸钾引发体系引发的丙烯酰胺聚合

The polymerization of acrylamide (AAm) initiated by the combination of N-(N', N'-dimethylaminomethylene)methacrylamide (DMAMMA) or N, N,-dimethylaminoethyl methacry-late with potassium persulfate were studied kinetically. The rate equation for the AAm polymerization initiated by the above initiation systems were given asRp- Kp[AAm][K₂S₂O₈]^1/2[DMAMMA]^1/2 Rp=Kp[AAm][K₂S₂O₈]^1/2[DMAEMA]^1/2 respectively. The overall activation energies for the above polymerization were determined to be 8.7 Kcal/mol and 9.2 Kcal/mol respectively. The UV analysis for the PAAm initiated by the above initiation systema showed that the polymerizable amines,DMAMMA and DMAEMA notonly joined the redox initiation but also incorprated into the AAm polymer chains. The super high molecule weight,10⁷of PAAm were obtained by using these initiation systems.