Nonequilibrium thermodynamics and fluctuation relations for small systems

In this review, we give a retrospect of the recent progress in nonequilibrium statistical mechanics and thermodynamics in small dynamical systems. For systems with only a few number of particles, fluctuations and nonlinearity become significant and contribute to the nonequilibrium behaviors of the systems, hence the statistical properties and thermodynamics should be carefully studied. We review recent developments of this topic by starting from the Gallavotti–Cohen fluctuation theorem, and then to the Evans–Searles transient fluctuation theorem, Jarzynski free-energy equality, and the Crooks fluctuation relation. We also investigate the nonequilibrium free energy theorem for trajectories involving changes of the heat bath temperature and propose a generalized free-energy relation. It should be noticed that the non-Markovian property of the heat bath may lead to the violation of the free-energy relation.     

红外光幕靶测速系统和精度分析

介绍了弹丸初速度测量的不同方法;讨论了红外光幕靶的测速原理;分析了该系统的测速误差;由实弹射击试验证明:红外光幕靶测速系统达到小于 0.1%的测速精度.     

聚甲基丙烯酸甲酯掺杂Ce3+的飞秒激光三维信息存储

用飞秒激光(200 fs,1 kHz,800 nm)脉冲在掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯(PMMA)膜中进行了光存储实验研究,包括对样品的吸收光谱、激光照射前后的电子旋转共振(Electron spin resonance,ESR)光谱的测量和讨论。结果表明掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯膜具有较低的写入阈值,有利于高速、并行的三维光存储。实验结果采用传统光学显微镜并行读出。给出了四层存储结果(点间距和层间距分别是4μm和16μm),并讨论了脉冲能量的大小对空腔尺寸的影响,进行高密度存储时,在保证读出信号灰度值足够大的情况下,应选择尽量小的激光脉冲写入能量。实验结果表明这种材料可以应用于三维光信息存储。     

Tunable structural color of anodic tantalum oxide films

Tantalum(Ta) oxide films with tunable structural color were fabricated easily using anodic oxidation.The structure,components,and surface valence states of the oxide films were investigated by using gazing incidence X-ray diffractometry,X-ray photoelectron microscopy,and surface analytical techniques.Their thickness and optical properties were studied by using spectroscopic ellipsometry and total reflectance spectrum.Color was accurately defined using L*a*b* scale.The thickness of compact Ta2O5 films was linearly dependent on anodizing voltage.The film color was tunable by adjusting the anodic voltage.The difference in color appearance resulted from the interference behavior between the interfaces of air-oxide and oxide-metal.     

基于拓扑结构的碱金属化合物摩尔磁化率的支持向量回归研究

基于经典电动力学导出的表征简单离子磁化率的磁性点价g_i所构建的分子磁性连接性指数?^mF及45种碱金属化合物的摩尔磁化率χ_m的实测数据集,利用粒子群寻优的支持向量回归（SVR）方法,建立了基于⁰F和¹F的碱金属化合物χ_m的预测模型,并与基于多元线性回归（MLR）模型的计算结果进行了比较.结果显示,基于9次交叉验证的SVR模型预测的平均绝对误差、平均相对误差绝对值以及均方根误差均比MLR模型小,表明SVR模型的回归预测能力优于MLR.研究表明,磁性连接性指数^mF是一种合适的分子描述符,SVR是一种预测碱金属化合物χ_m的有效方法. 关键词： 碱金属化合物 摩尔磁化率 支持向量回归 预测     

Recombination during expansion of ultracold plasma

Signals of ultracold plasma are observed by two-photon ionization of laser-cooled caesium atoms in a magneto-optical trap. Recombination of ions and electrons into Rydberg atoms during the expansion of ultracold plasma is investigated by using state-selective field ionization spectroscopy. The dependences of recombination on initial electron temperature (1--70 K) and initial ion density ($ \sim $10$^{10}$ cm$^{ - 3})$ are investigated. The measured dependence on initial ion density is $N^{1.547\pm 0.004}$ at a delay time of 5 $\mu $s. The recombination rate rapidly declines as initial electron temperature increases when delay time is increased. The distributions of Rydberg atoms on different values of principal quantum number $n$, i.e. $n=30$--60, at an initial electron temperature of 3.3 K are also investigated. The main experimental results are approximately explained by the three-body recombination theory.     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

Cs 39D态Rydberg原子Stark光谱的实验研究

本文从理论和实验上对Cs39D态Rydberg原子在弱电场作用下的Stark效应做了详细研究. 理论上利用数值方法计算了Cs原子39D态的Stark结构;实验上,采用两步激发超冷基态原子获得超冷Rydberg原子,通过场电离的方法获得了39D态的Stark光谱,测量获得α^5/2₂,α^5/2₀,α^3/2₂和α^3/2₀相应的极化率分别为：62(7),－146(13), 73(6) 和－106(20) MHz·V^-2cm²,实验结果与理论相符合.     

近空间升华法制备CdS多晶薄膜的研究

系统地研究了近空间升华法(CSS)制备CdS薄膜沉积速率的影响因素。发现CdS薄膜的沉积速率随升华源温度的升高而增大,但随衬底温度和沉积气压的上升而下降。对所制备样品的结构、表面形貌和光谱透过率特性进行了测试,结果表明：(1)不同氧分压下沉积的CdS薄膜沿(103)晶向择优生长。CdCl₂氛围下退火后,(103)晶向的优势得到进一步加强;(2)不同氧分压制备的CdS薄膜致密且粒径均匀,晶粒的大小随着衬底温度的升高而增大,但薄膜的粗糙度也随之增大;(3)随着CdS薄膜厚度的减小,可见光中短波段的透过率有所增大,有利于提高太阳电池的短波光谱响应。并将CSS制备的CdS多晶薄膜用于CdTe太阳电池的制作,获得了10.29%的光电转换效率,初步验证了该制作工艺的可行性。     

35MeV/u 40 Ar+197 Au反应中热核的碎裂密度

许多提取核反应过程中熵产生的方法只适用于高能核反应过程 ,而约化d的产额方法可以用于较低能量的重离子核反应中 .对于 3 5MeV/u40 Ar+ 197Au的核反应过程 ,利用这种方法所得的熵和约化带电粒子多重性提取的熵结果一致 .对于后角热核发射体系 ,实验提取的核温度为 ( 4.7± 1 .2 )MeV ,熵为S/A =2 .5± 0 .5,根据实验提取的熵和核温度可以确定其碎裂密度小于 0 .1 ρ0