溶剂热法制备Ag/TiO2纳米材料及其光催化性能

以乙醇为溶剂, 钛酸四丁酯为前驱体, 用溶剂热法制备了Ag表面修饰的负载型纳米二氧化钛光催化剂. 利用X射线衍射(XRD)、N₂吸附-脱附(BET)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)、紫外-可见(UV-Vis)光谱等技术对其进行了系统的表征, 以亚甲基蓝(MB)溶液的脱色降解为模型反应, 考察了不同Ag含量样品的光催化性能. 结果表明: 用溶剂热法制备的样品中TiO₂皆为锐钛矿相, 金属Ag颗粒沉积在TiO₂表面, 粒径为2 nm左右, 比表面积较溶胶凝胶法制备的样品大大增加, 最高可达151.44 m²·g^-1; UV-Vis光谱和光催化实验表明: Ag修饰使TiO₂对光的吸收能力大大增强, 吸收带边红移至可见光区, 亚甲基蓝在该复合材料上的光催化降解反应遵循一级反应动力学模型; 溶剂热法制备样品的光催化性能明显好于溶胶凝胶法制备的样品, 在紫外光和可见光下, Ag摩尔分数为5%的样品表现出最佳的光催化活性.     

自旋梯状化合物Sr14Cu24O41+δ的Raman散射谱的研究

利用常规的固相反应法制备了单相多晶样品Sr₁₄Cu₂₄O_41+δ,并在不同的温度下进行退火,改变样品中的氧含量.能量色散谱(EDS)显示样品中的氧含量随退火温度的增加而减少.磁化率温度特性的研究显示,600 ℃下退火的样品中的二聚体数最多.Raman光谱的研究显示,伴随着样品中氧含量的偏离,由无序或低能磁激发诱导的一些Raman振动模出现规律性的变化.进一步的分析证实这种Raman光谱的变化行为与晶体结构中由于氧含量的不同     

Phonon dispersion relations and soft modes of 4 carbon nanotubes

The phonon dispersion relations of three kinds of 4 carbon nanotubes are calculated by using the density functional perturbation theory. It is found that the frequencies of some phonon modes are very sensitive to the smearing width used in the calculations, and eventually become negative at low electronic temperature. Moreover, two kinds of soft modes are identified for the (5,0) tube which are quite different from those reported previously. Our results suggest that the (5,0) tube remains metallic at very low temperature, instead of the metallic-semiconducting transition claimed before.     

Fe掺杂对自旋梯状化合物Sr14(Cu1－yFey)24O41的结构和电输运性质的影响

采用常规的固相合成法分别制备了Fe³⁺掺杂和2/3Fe³⁺+1/3Fe²⁺混合Fe离子掺杂的两组Sr₁₄(Cu_1-yFe_y)₂₄O₄₁系列样品.X射线衍射分析显示，当Fe³⁺离子的掺杂量y≤0.03以及2/3Fe³⁺+1/3Fe²⁺混合Fe离子掺杂量y≤0.02时，样 关键词： 强关联电子系统 自旋梯状结构化合物 晶体结构 电输运性质     

Evolution of the 128-cm-1 Raman phonon mode with temperature in Ba(Fe1-xCox)2As 2 (x = 0.065 and 0.2)

We report electronic Raman scattering measurements on Ba(Fei_1-xCo_x)₂As₂（x = 0.065 and 0.2） single crystals with Raman shifts from 9 cm^-1 up to 600 cm^-1 in the symmetry of B_lg with respect to 1 Fe unit cell.When the crystals are cooled down,the evident quasielastic peaks of Raman spectra occur only in the crystal with x = 0.065,which is due to the contribution of orbital ordering between xz and yz Fe 3d orbitals,as we reported in another work.Here,we analyze the E_g phonon at 128 cm^-1,which has the same function form of its Raman tensors as those of xz and yz Fe 3d orbitals in these two crystals respectively.Unlike their electronic continuums,no anomalies are found in the E_g phonons of these two samples,which simply follows the expressions corresponding to the anharmonic phonon decay into acoustic phonons with the same frequencies and opposite momenta.Our results indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping and there is not any indication of coupling between charge nematicity and E_g phonon mode from our experimental results,which is consistent with the results in our previous work.     

La0.4Ca0.6MnO3系统中Mn位Fe和Cr掺杂效应的比较性研究

利用固相反应法制备了Mn位Fe³⁺和Cr³⁺掺杂的系列锰氧化物La_0.4Ca_0.6(Mn_1-x(y)B_x(y))O₃ (B=Fe³⁺ (0≤x≤0.1); Cr³⁺ (0≤y≤0.1)) 多晶样品,研究了掺杂对样品输运性质的影响.实验结果表明两种离子具有截 关键词： 锰氧化物 反铁磁 磁电阻效应     

自旋梯状化合物Sr14(Cu1-yFey)24O41的拉曼散射谱研究

利用常规的固相合成法制备了三种Sr₁₄(Cu_1-yFe_y)₂₄O₄₁(y=0,0.03,0.05)多晶样品,其中y=0.03是单纯Fe³⁺掺杂,y=0.05是Fe³⁺和Fe²⁺混合掺杂.在100—1500cm^-1频移范围内测量了这三种样品的偏 关键词： 拉曼散射 电输运性质 自旋梯状化合物     

蓝青铜Tl0.3MoO3单晶电荷密度波的低频钉扎效应

在１０Ｈｚ至１３ＭＨｚ频率范围内,我们对蓝青铜Ｔｌ０．３ＭｏＯ３单晶在电荷密度波态不同温度下的复电导进行了系统的研究。在非共振区,Ｔｌ０．３ＭｏＯ３单晶的电导行为与Ｒａｍａｎｕｊａｃｈａｒｙ等人所报道的相一致。但是在低频区所观察到共振现象的特征钉扎频率比该小组所报道的小一个量级,而与Ｋ０．３ＭｏＯ３具有相同的量级。通过加上一个Ｄｒｕｄｅ项,利用谐振子模型拟合实验数据,我们得到了单粒子能隙,电子的有     

Zn掺杂对1/2 S自旋梯状结构化合物Sr14Cu24O41磁性质的影响

利用固相反应法制备了Sr14Cu24O41和Sr14(Cu0.99Zn0.01)24O41的样品,X-ray衍射分析显示,样品呈较纯的单相,样品的晶格常数掺杂前后并无明显变化.测量了S=0的非磁性元素Zn部分替代S=1/2的B位Cu离子后体系低温磁性质的变化.曲线整体拟合结果表明掺Zn使得体系中居里外斯部分的贡献减少,并且由Zn引入的局域磁矩通过近邻的自旋单态与次近邻的Cu2 进行超交换相互作用形成二聚体,使系统内二聚体的个数增加并且二聚体的耦合能减小.     

Optimization of large-area YBa2Cu3O7-δ thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa₂Cu₃O_7-δ(YBCO) thin films on LaAlO₃ substrate for microwave devices prepared by pulsed laser deposition(PLD). The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications, such as surface morphology and surface resistance(Rs).This was achieved by improving the target quality and increasing the oxygen pressure during deposition, respectively. To ev...