耦合谐振电路系统中的Fano共振现象

常见的共振响应谱表现为近似对称分布的洛伦兹线型,而Fano共振则表现出明显的非对称的响应谱.尝试在普通物理实验层次展示Fano共振现象,建立基础实验与前沿研究的联系,通过构建RLC耦合谐振电路系统,在实验上展示了Fano共振现象,作为其中的一种特殊情况,还展示了类似电磁感应透明的现象,并通过理论公式的计算解释了实验结果.     

钴(Ⅱ)、镍(Ⅱ)-二甲酚橙多元络合物的光谱特性研究

研究了Co(Ⅱ)、Ni(Ⅱ)-NH3-XO混配络合物和Co(Ⅱ)、Ni(Ⅱ)-NH3-XO-CTMAB多元络合物的形成条件及吸收光谱特性,结果表明,在pH 9.5的氨性缓冲溶液中,[NH3]/[XO]值在100~400范围内所形成的钴、镍多元络合物的最大吸收波长分别为530和590 nm,钴的多元络合物在0~2.0 mg.L-1、镍的多元络合物在0~2.6 mg.L-1范围内符合比耳定律,相对标准偏差分别为2.1%和1.9%。     

氯化银立方体微晶乳剂和{100}面扁平微晶乳剂的甲酸盐掺杂增感

将甲酸盐掺杂在乳剂微晶不同位置处,制备成氯化银立方体微晶乳剂和{100}面扁平微晶乳剂.实验发现:作为正空穴捕获剂,适当计量的甲酸盐在不增加乳剂灰雾的前提下,可使上述乳剂的感光度提升3—8倍.甲酸盐在两种晶形乳剂的不同位置掺杂的研究结果显示,甲酸盐均匀掺杂可比表面掺杂获得更高的感光度.在两种乳剂中甲酸盐掺杂增感都可与其后的硫增感、硫加金增感以及光谱增感协同作用,进一步提升乳剂的感光性能.     

草酸根掺杂板状溴碘化银颗粒乳剂的增感效应研究

使用反馈式微机控制双注乳化仪,在晶体生长过程中一定时间内,加入一定量的草酸盐,制得了草酸根离子处于晶体颗粒次表面的板状溴碘化银微晶乳剂.对其实验过程的考察和感光性能的测试结果表明:1)草酸根掺杂于次表面的溴碘化银乳剂与未掺杂乳剂相比较,经过化学增感后,或光谱增感后的乳剂,其感光度有明显提高(Sd/S0≥1.5),即具有明显的增感效应;2)无论是经过化学增感,还是经光谱增感后的乳剂,草酸根掺杂溴碘化银颗粒乳剂的灰雾水平都不高.     

手性Salen-Cu(Ⅱ)和唑啉-Cu(Ⅱ)配合物催化2-苯基环己酮的不对称Baeyer-Villiger反应研究

对一系列手性Salen和唑啉配体与中心金属Cu(Ⅱ)的配合物催化2-苯基环己酮的不对称Baeyer-Villiger反应进行了研究,设计和合成了新型手性配体Ⅲ,Ⅳ, Ⅴ,对配合物Ⅴ-Cu(Ⅱ)进行了单晶X射线衍射分析. 并考察了助氧化剂、溶剂等对反应活性和选择性的影响.     

氮杂二烯光化学反应合成喹啉衍生物

综述了以氮杂二烯为原料,光化学反应合成喹啉衍生物的最新进展.参考文献18篇.     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps，波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法，实验测量了激发空气电离所需的阈值激光强度.结果表明，当激光脉冲宽度从50fs增加到22ps时，阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²；I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p     

Single-Proton Pickup Reaction of the Halo Nucleus ^6He on a ^9Be Target at 25 MeV/nucleon

The inclusive differential cross sections of the ^7 Li nucleus in a reaction induced by ^6He on a ^9Be target are measured at an incident energy of 25 MeV/nucleon. Finite-range distorted-wave Born approximation calculations suggest that these ^7 Li particles are formed in a direct single-proton pickup reaction ^9Be（^6He,^7 Li）^8Li. The experimental data can be well reproduced by taking into account of the contributions of both the ground states and the first excited states of ^7Li and ^8Li.     

High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.