低磁场过模慢波结构型高功率毫米波发生器的改进

 利用粒子模拟的方法设计了一个高功率毫米波发生器,并对其进行了实验研究及改进。采用过模慢波结构以增大束波作用空间,从而提高功率容量;为实现过模慢波器件的单模、单频工作,选择TM01模的π模作为工作模式。采用过模慢波结构,结合合理的器件结构设计,可降低器件工作所需的导引磁场。实验在TORCH-01加速器平台进行,产生的微波频率由色散线法测量,其功率由远场积分法得到。最初的器件采用矩形波纹慢波结构,得到频率为33.56 GHz、功率约110 MW的微波输出,但功率难以进一步提高,脉宽仅为7~8 ns,且在慢波结构边沿发现击穿痕迹。对矩形慢波结构进行倒圆角处理后,借助数值模拟,发现其TM01模的π模频率变化不大。改进后的器件在0.8 T导引磁场下,当电压和电流分别为590 kV与5.2 kA时,实验得到频率33.56 GHz、功率320 MW的毫米波输出,微波模式为准TM01模,效率约10%,脉宽延长至约13 ns,器件内表面无明显击穿痕迹。     

高压下RhB的相变、弹性性质、电子结构及硬度的第一性原理计算

采用密度泛函理论中的赝势平面波方法系统地研究了高压下RhB的结构相变、弹性性质、电子结构和硬度.分析表明,RhB在25.3 GPa时从anti-NiAs结构相变到FeB结构,这两种结构的弹性常数、体弹模量、剪切模量、杨氏模量和弹性各向异性因子的外压力效应明显.电子态密度的计算结果显示,这两种结构是金属性的,且费米能级附近的峰随着压强的增大向两侧移动,赝能隙变宽,轨道杂化增强,共价性增强,非局域化更加明显.此外,硬度计算结果显示,anti-NiAs-RhB的金属性比较弱,有着较高的硬度,属于硬质材料.     

Binding energies of impurity states in strained wurtzite GaN/Al_xGa_(1-x)N heterojunctions with finitely thick potential barriers

Ground state binding energies of donor impurities in a strained wurtzite GaN/AlxGal_xN heterojunction with a po- tential barrier of finite thickness are investigated using a variational approach combined with a numerical computation. The built-in electric field due to the spontaneous and piezoelectric polarization, the strain modification due to the lattice mismatch near the interfaces, and the effects of ternary mixed crystals are all taken into account. It is found that the binding energies by using numerical wave functions are obviously greater than those by using variational wave functions when impurities are located in the channel near the interface of a heterojunction. Nevertheless, the binding energies using the former functions are obviously less than using the later functions when impurities are located in the channel far from an interface. The difference between our numerical method and the previous variational method is huge, showing that the former should be adopted in further work for the relevant problems. The binding energies each as a function of hydrostatic pressure are also calculated. But the change is unobvious in comparison with that obtained by the variational method.     

���HT-7�ŵ�ƽ���׶ε��������ܶȶ����ݵ��ӵ�Ӱ��

利用硬X射线探测系统监测HT-7托卡马克装置中逃逸电子轰击到装置第一壁材料时所产生的高能硬X射线,研究了在放电平顶阶段提高等离子体密度对逃逸电子行为的影响。实验结果表明,通过提高放电平顶阶段等离子体密度,HXR强度迅速降到很低的水平,这意味着能有效减少这个阶段形成的逃逸电子的数目及能量。