Pr掺杂Bi_2MoO_6/TiO_2复合纳米纤维的制备及可见光催化性能

以电纺TiO_2纳米纤维为基质,采用溶剂热法制备了稀土Pr掺杂Bi_2MoO_6/TiO_2复合纳米纤维,利用X射线衍射仪、扫描电子显微镜、透射电子显微镜、紫外-可见-近红外分光光度计和荧光光谱仪等对不同样品的物相、形貌和光学性能等进行表征,以甲基橙为模拟有机污染物,考察了样品的光催化性能.结果表明,在复合样品中,Pr~(3+)进入Bi_2MoO_6晶格,部分取代Bi~(3+)形成施主能级,导致能级带隙变窄,不仅有利于提高样品的可见光催化活性,抑制光生电子-空穴对复合,而且还提高了Bi_2MoO_6/TiO_2的光催化活性和稳定性.当Pr的掺杂量为3%(摩尔分数)时,光催化降解甲基橙的效果最佳,可见光照射180 min时降解率达到93.8%,比纯Bi_2MoO_6/TiO_2的降解率有明显提高.     

减速运动活塞表面空化的可视化研究

通过实验研究了液体中作减速运动活塞表面的游移空化现象以及不同液体和不同导管长度对空化的影响,基于数字图象处理方法,对空化随时间发展进行了描述并对活塞表面空化原因及有关现象进行了分析。     

CS与NO分子反应势能面的理论研究

应用量子化学从头计算和密度泛函理论(DFT)对CS分子和NO分子的反应机理进行了研究. 在B3LYP/6- 311G**和CCSD(T)/6-311G**水平上计算了CS分子与NO分子反应的二重态和四重态反应势能面. 计算结果表明, 二重态反应势能面中, CS分子的C端和NO的N端连接是主要的反应方式. 反应物先经过过渡态TS1, 形成具有直线结构的中间体1 (CSNO). 中间体1经过一系列异构化得到主要产物P₁ (CO＋SN). 此反应是放热反应, 反应热为－183.75 kJ/mol . 而四重态由于反应入口势垒过高, 是不重要的.     

生活垃圾微生物堆肥水溶性有机物光谱特性研究

利用外源微生物(MS,ZJ)进行城市生活垃圾工厂化堆肥,在堆肥前后对水溶性有机物的紫外、红外、荧光光谱进行了分析,探讨外源微生物堆肥对水溶性有机光谱学特性的影响。结果表明,堆肥结束后,不同处理水溶性有机物紫外、红外、荧光光谱形状基本相似,但特征峰强度有明显区别。与CK相比,接种微生物处理堆肥后,水溶性有机物紫外光谱280 nm附近类肩峰明显减弱;红外光谱解析表明,水溶性有机物中小分子糖类物质减少,芳族类物质增加;荧光同步扫描光谱进一步证实,水溶性有机物中多环芳族类化合物增加,其荧光光谱特征峰与污泥中富里酸相似。试验结果证实,接种外源微生物可明显增加堆肥水溶性有机物芳构化程度,各处理芳构化程度依次为：MS+ZJ>ZJ>MS>CK。     

微生物接种堆肥胡敏酸三维荧光特性研究

为提高堆肥效率,试验采用接种微生物堆肥技术,通过对堆肥样品中胡敏酸三维荧光光谱特性进行动态分析,探讨了微生物接种对堆肥腐殖化进程的影响。在堆肥初期,胡敏酸只产生一个类富里酸荧光峰(peak a,Ex/Em为330/440)。在堆肥的336 h,与对照(RUN_ck)相比,接种微生物堆肥(RUN_mic)胡敏酸三维荧光光谱中类富里酸特征峰(peak a,Ex/Em约为350/440)荧光强度明显减少,而类胡敏酸荧光峰(peak b,Ex/Em约为390/470)强度则略有增加;并且peak a和peak b对应的激发、发射波长均有一定程度的红移。胡敏酸元素分析表明,堆肥336 h,RUN_ck胡敏酸分子中C/H和O/C依次增加9.68%和10.91%;RUN_mic中胡敏酸C/H和O/C依次增加了11.11%和20.37%,表明RUN_mic中胡敏酸分子缩合度明显。以上结果证实,接种微生物可明加快堆肥腐殖化进程,进而提高堆肥效率。     

广义Heronian平均与幂平均的最优比较

比较了含有两个参数的广义Heronian平均H_(p,W)(a,b)与幂平均M_q(a,b)的大小,得到了M_q(a,b)≥(≤)H_(p,w)(a,b)对于任意a,b>0成立的充要条件.     

Study on gamma response function of E J301 organic liquid scintillator with GEANT4 and FLUKA

The gamma response function is required for energy calibration of EJ301 （5 cm in diameter and 20 cm in height） organic liquid scintillator detector by means of gamma sources. The GEANT4 and FLUKA Monte Carlo simulation packages were used to simulate the response function of the detector for standard 22Na, 60Co, 137Cs gamma sources. The simulated results showed a good agreement with experimental data by incorporating the energy resolution function to simulation codes. The energy resolution and the position of the maximum Compton electron energy were obtained by comparing measured light output distribution with simulated one. The energy resolution of the detector varied from 21.2% to 12.4% for electrons in the energy region from 0.341 MeV to 1.12 MeV. The accurate position of the maximum Compton electron energy was determined at the position 81% of maximum height of Compton edges distribution. In addition, the relation of the electron energy calibration and the effective neutron detection thresholds were described in detail. The present results indicated that both packages were suited for studying the gamma response function of EJ301 detector.     

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave(HPM) damage effect on the Al Ga As/In Ga As pseudomorphic high electron mobility transistor(p HEMT) is studied by simulation and experiments. Simulated results suggest that the HPM damage to p HEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to p HEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of p HEMT. Finally the interior observation of damaged samples by scanning electron microscopy(SEM) illustrates that the failure mechanism of the HPM damage to p HEMT is indeed device burn-out and the location beneath the gate near the source side is most susceptible to burn-out, which is in accordance with the simulated results.     

高温SHPB冲击实验技术及其应用

 为研究高温下材料的动态力学性能,研制了一套适用于分离式霍普金森压杆（Split Hopkinson Pressure Bar,SHPB）高温冲击实验的温控系统。利用该温控系统和Φ100 mm常规SHPB装置,对混凝土在高温下的动态力学性能进行了实验研究,实验温度分别为20、200、400、600、800和1 000 ℃。结果表明：由管式实时加热装置和箱式预加热炉组成的温控系统操作方便,实验效率高,试件组装方法简便可行;热传导导致的试件温度分布不均匀和压杆局部温升对实验结果产生的影响可以忽略,实验技术可靠;高温下混凝土动态力学性能的温度效应十分明显,相同冲击速率下,随温度升高,平均应变率逐渐增大,动态应力-应变曲线逐渐表现出塑性特性,动态抗压强度随温度升高先增大后减小,动态峰值应变随温度升高不断增大。     

带小扰动的随机发展方程的不变测度

本文考虑带小扰动的随机发展方程,证明如何建立此方程的耦合解.作为应用,我们证明解的Feller连续性和不变测度的存在唯一性.还进一步建立了当扰动趋于零时,关于这族不变测度的大偏差原理.