可压缩κ-ω方程紊流模型及其应用

前言U前可用于工程应用的各种紊流模型中,在对逆压梯度下有无分离流动、低雷诺数区域流动以及对可压缩流动,特别是高速紊流流动等问题的精确数值模拟上,除多重尺度模型外,预测精度较理想的是k一。两方程模型。在k一。模型的开发和应用上,Wilcox及Menter等［‘－’］?..     

一种有效的拼接图像色彩校正算法

针对图像拼接中子图像由于拍摄的角度、相机曝光参数等不同,造成子图像间色调与明暗存在明显差异的问题,提出了一种利用子图像间重叠区域统计信息的色彩校正算法。首先将原始的色彩转换算法利用空间协方差矩阵表述成能直接在RGB空间进行转换的形式,再利用拼接图像间的重叠区域信息对算法进行简化,得到色彩校正算法。实验表明该算法能够有效地应对拼接图像时各子图像间的色调与明暗差异,在图像拼接时可以得到良好的色彩校正效果,同时相比原始的色彩转换算法减少了计算耗时。     

区域熔炼法制备高 Jc Nd123超导体

】Nd1+ x Ba2 - x Cu3Oy超导体以其良好的 Jc- B特性倍受人们注目。文中用区域熔炼技术在空气下制备出取向良好的 Nd1+ x Ba2 - x Cu3Oy 块材 ,采用纯氩下高温退火的办法抑制固溶体的形成 ,得到了零电阻温度 94K、临界电流密度达 540 0 A/cm2 的超导体。讨论了进一步提高 Jc的可能途径是减少液相的流失并使 Nd4 Ba2 Cu2 O10 相均匀分布。     

空间弥散X射线对脉冲星导航精度的影响

基于RXTE卫星天基数据,建立了时空坐标系转换、时间修正及历元折叠方法,构建了用于提取导航信息的Crab脉冲星轮廓,剖析了该天基载荷结构及特性,对卫星运行空间背景辐射进行了模拟计算。结果表明,在设定导航条件下,空间弥散X射线对航天器单星定轨及多星定位影响在km量级以上。同时阐述了实用化脉冲星导航探测中,改进导航定位精度急需注意的技术问题。     

基于遗传算法的透平级多目标优化设计

本文发展并完善了一种基于非受控解的排序、基于共享机制的小生境技术和交配约束的多目标遗传算法,在一元热力设计基础上,对一个透平级取实际压力与给定压力的差值和级的作功能力为目标函数进行了优化。算例表明该算法具有同时捕获—组解的能力,对于解决多目标优化问题具有很强的适应性和合理的优化结果,是一种有效的多目标优化方法。     

色度学实验

验证颜色相加混合、相减混合规律, 通过定量测量计算混合色及汞灯的色坐标．     

热电型太赫兹探测器响应度校准技术

为保证太赫兹辐射强度测量的准确可靠,对热电型太赫兹探测器的响应度进行了校准。首先,基于替代法构建了太赫兹探测器响应度校准装置,该装置的合成标准不确定度为2.4%。然后,在1.63 THz频率点处,利用校准装置对12D-3S-VP型太赫兹探测器进行了校准,得到的响应度校准结果为197.6 mV/W,与厂家标称值一致。对自主研制的热电型太赫兹探测器进行了校准,得到的响应度和合成标准测量不确定度分别为362.2 mV/W和2.7%。最后,将校准结果的标准偏差值与合成标准不确定度进行了比较,发现标准偏差值在合理范围内,这进一步证明了校准方法、校准结果以及不确定度分析的合理性。     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

Development and transition of spiral wave in the coupled Hindmarsh--Rose neurons in two-dimensional space

The dynamics and the transition of spiral waves in the coupled Hindmarsh--Rose (H--R) neurons in two-dimensional space are investigated in the paper. It is found that the spiral wave can be induced and developed in the coupled HR neurons in two-dimensional space, with appropriate initial values and a parameter region given. However, the spiral wave could encounter instability when the intensity of the external current reaches a threshold value of 1.945. The transition of spiral wave is found to be affected by coupling intensity D and bifurcation parameter r. The spiral wave becomes sparse as the coupling intensity increases, while the spiral wave is eliminated and the whole neuronal system becomes homogeneous as the bifurcation parameter increases to a certain threshold value. Then the coupling action of the four sub-adjacent neurons, which is described by coupling coefficient D’, is also considered, and it is found that the spiral wave begins to breakup due to the introduced coupling action from the sub-adjacent neurons (or sites) and together with the coupling action of the nearest-neighbour neurons, which is described by the coupling intensity D.     

打造自己的回归计算器

通过调用Excel内部函数,轻松构造出自己的回归计算器,快速获得回归方程。方法直观方便,可以极大的提高工作效率。