Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films

Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2).     

溴硅酸锶钙铕（Ⅱ）的合成及其发光特性

本文以CaCO_3,SrCO_3,CaBr_2·2H_2O,SrBr_2·6H_2O,SiO_2,Eu_2O_3为原料,通过高温固相反应合成了溴硅酸锶钙铕(Ⅱ)发光新材料。利用正交试验法求得了材料合成的最佳条件,分析了钙锶摩尔比,二氧化硅的用量以及溴化物等对发光的影响。研究表明,溴硅酸锶钙铕(Ⅱ)的发光较溴硅酸锶铕(Ⅱ)和溴硅酸钙铕(Ⅱ)都强得多。     

夸克模型下的赝标介子之间的短程相互作用

本文用自由的单胶子湮没机制和Hybrid中间态机制分别计算了π⁺-π^－,K⁺-K^－,K⁺-π^－和K^－-π⁺之间的短程相互作用.计算结果表明,对于π⁺-π^－散射,用hybrid中间态模型计算的结果能定性地符合实验,而对于K⁺-K^－,K⁺-π^－或K^－-π⁺相互作用,有待实验检验.     

初态相互作用与高能p—A碰撞中J/ψ产额的压低

研究了初态相互作用对高能p—A碰撞中J/ψ产额压低的影响.由于入射质子与靶核的非弹性作用,使它的能量减小.考虑了这个贡献之后,只需末态相互作用的截面为σ^f_abs=2.1mb,就能很好地再现实验结果.     

Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing （CMP） of Ge2Sb2Te5 phase change films. We use reactive ion etching （RIE） as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, currentvoltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1 mA to 0.025 mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.     

600 kV波形可调快前沿脉冲源的研制

介绍了一种波形可调的高电压快前沿脉冲源。该脉冲源由Marx发生器、脉冲成型组件、主开关、匹配负载、分流电阻、串联电感等部件构成。各部件自成一体,呈模块化分布。以Marx发生器作为初级储能,通过调节发生器输出端分流电阻、串联电感及脉冲成型组件等模块,可以输出包括双指数波和方波在内的5种脉冲波形。输出脉冲幅值在200~600 kV范围内可调,最小脉冲前沿可达2 ns。     

掺Y对PbWO4闪烁体的热释光影响

研究了纯PbWO₄和PbWO₄:Y晶体经γ射线辐照和可见光光照前后室温 以上的热释光.发现大剂量辐照后掺Y可以有效地抑制热释光的强度并使热释光峰移向高温, 说明掺Y有利于提高光输出的稳定性.可见光光照也会影响热释光并可以产生新的热释光峰, 这可能是由于光释电子(或空穴)被浅陷阱重新俘获或是光照后产生了新型色心的结果. 关键词： 4')" href="#">PbWO₄ 掺Y 热释光     

牙冠表面三维光学测量和重建方法

选取光栅变形条纹直接分析方法,采用自制的牙冠表面形状三维测量仪和精密可调转台获得了上颌中切牙和下颌磨牙牙冠各个面的三维测量数据,将各面数据在UniGraphic软件平台上通过旋转坐标拍的方法实现数据拼合,重建了牙冠表面的三维形态,生成了牙冠实体模型。     

超宽禁带半导体 β-Ga2O3单晶生长突破2英寸

<正>氧化镓(β-Ga_2O_3)单晶是一种第四代超宽禁带氧化物半导体,其禁带宽度为4.8~4.9eV,具有独特的紫外透过特性(吸收截止边~260nm);击穿电场强度高达8MV/cm,是Si的近27倍、SiC及GaN的2倍以上,巴利加优值分别是SiC、GaN的10倍、4倍以上,并且可以采用熔体法生长大尺寸体单晶,因此β-Ga_2O_3已成为超高压功率器件和深紫外光电子器件的优选材料之一。由于其在军事、能源、医疗、环境等领域的重要应用价值,近年来,氧化镓材料及器件的研究与应用成为当前美国、日本、德国等国家的研究热点和竞争重