Two-photon interference spectra at the sum-frequency generation of a bichromatic field interacting with a three-level atom

We have calculated the spectral functions for a number of induced excitations near the sum-frequency generation of a bichromatic field interacting with a three-level atom in the cascade configuration. Although the two-photon spontaneous emission is electric dipole forbidden, there are induced peaks whose subnatural line widths and spectral heights depend on the intensities of the bichromatic field. At low intensities of both laser fields, the maximum heights of the induced peaks take positive, zero, and negative values, indicating that the physical processes of absorption (attenuation), dark resonance (nonabsorbing state), and stimulated emission (amplification) are likely to occur at the sum-frequency generation of the two laser fields, respectively. The derived results are graphically presented and discussed. PACS 32.80.-t; 42.50.Hz     

The mechanism of emission in the red photoluminescence band of porous silicon

Porous silicon (PS) exhibits several photoluminescence (PL) bands, whose spectral position and intensity depend strongly on the actual conditions of preparation of PS, its treatment, and subsequent use. The PS PL band peaking at about 1.8 eV and usually assigned to the intrinsic emission of silicon nanocrystals was studied. It was shown that the temperature-induced variation of the PL kinetics in the 80 to 300-K interval follows a complex pattern and depends noticeably on the actual point on the band profile. The temperature behavior of PL decay in the 1.8-eV band is determined by the electron-hole recombination rate within a nanocrystal and the cascade carrier transitions from small to large nanocrystals, with an attendant decrease in energy.     

Investigations of low- and high-spin states of <Superscript>132</Superscript>La

The fusion evaporation reaction ¹²²Sn(¹⁴N, 4n)¹³²La was used to populate the high-spin states of ¹³²La at the beam energy of 60 MeV. A new band consisting of mostly E2 transitions has been discovered. This band has the interesting links to the ground state 2^- and the isomeric state 6^-. A new transition of energy 351 keV connecting the low-spin states of the positive-parity band based on the πh _11/2 ⊗ νh _11/2 particle configuration, has been found. This has played a very important role in resolving the existing ambiguities and inconsistencies in the spin assignment of the band head. Received: 12 August 2002 / Accepted: 18 March 2003 / Published online: 7 May 2003     

Contribution of “unusual” domain walls to the magnetoresistance of multilayer magnetic structures

The contribution to electrical resistance due to scattering of charge carriers by domain walls is analyzed. It is revealed that “unusual” domain walls are created by frustrations in ferromagnet-antiferromagnet multilayer magnetic structures. The thickness of an unusual domain wall is substantially less than that of a usual domain wall. It is shown that scattering of charge carriers by unusual domain walls can contribute significantly to the magnetoresistance of ferromagnet-antiferromagnet multilayer magnetic structures. An analysis of the contribution made by the Levy-Zhang mechanism to the magnetoresistance demonstrates that the initial estimate obtained for this contribution is considerably exaggerated.     

Optimal entropic uncertainty relation for successive measurements in quantum information theory

We derive an optimal bound on the sum of entropic uncertainties of two or more observables when they are sequentially measured on the same ensemble of systems. This optimal bound is shown to be greater than or equal to the bounds derived in the literature on the sum of entropie uncertainties of two observables which are measured on distinct but identically prepared ensembles of systems. In the case of a two-dimensional Hilbert space, the optimum bound for successive measurements of two-spin components, is seen to be strictly greater than the optimal bound for the case when they are measured on distinct ensembles, except when the spin components are mutually parallel or perpendicular     

Diffusion Structural Analysis Study of Titania Films Deposited by Sol-Gel Technique on Silica Glass

The diffusion structural analysis (DSA) was used to characterize microstructure changes of hydrous titania gel films under in situ conditions of heating. TG and DTA were used in order to elucidate the processes controlling the formation of anatase film during heating of hydrous titania gel film. The annealing of porosity and near surface structure defects of the dehydrated titania films was indicated by DSA in the temperature range 255–700°C as the decrease of radon release rate. It was demonstrated that the annealing was enhanced on heating in oxygen in comparison with heating in argon. The DSA experimental results were compared with model curves describing the radon diffusion mobility and the annealing of radon diffusion paths.     

Angular correlations in the decays of two unstable identical particles with close momenta

For the decay of two identical particles with close momenta, the angular correlations between the directions of emission of decay products are considered on the basis of the model of independent single-particle sources emitting unstable unpolarized particles of nonzero spin. These correlations reflect spin correlations that are caused by quantum-statistics and final-state-interaction effects. A general theory of angular correlations in the decays of two arbitrarily polarized particles (resonances) is constructed.     

2,9-disubstituted 1,10-phenanthroline nickel complexes: Syntheses,characterization, and their ethylene oligomerization

Nickel complexes 1–4 ligated with 2,9-disubstituted-1,10-phenanthroline were synthesized and characterized by FT-IR spectra and elemental analysis. The molecular structure of complex 2 was confirmed by X-ray crystal diffraction analysis. Activated with methylaluminoxane (MAO), those complexes showed moderate activities for ethylene oligomerization. Published in Kinetika i Kataliz, 2007, Vol. 48, No. 5, pp. 710–714. This article was submitted by the authors in English.     

Dislocation model of a nanotwin

We propose a dislocation model of a nanotwin, which is used to calculate the stress fields in the nanotwin. We consider the role of these stresses in the process of interdislocation interaction and nanotwin growth.