关于一类具有相同非负群逆和M-P逆的非负矩阵的进一步研究

1引言设A是n阶非负方阵．设矩阵方程(1)AXA=A,(2)XAX=X,(3)(AX)~T= AX,(4)(XA)~T=XA,(5)AX=XA．A具有非负广义逆是指存在非负方阵X满足方程(1)～(4),并记为A~(?)．A具有非负群逆是指存在非负方阵X满足方程(1),(2),(5),并记为A~#．在A~(?)存在的前提下,两者相同的充分必要条件有(a)AA~(?)=A~(?)A；(b)A~(?)=p(A),其     

On Dirichlet Characters of Polynomials

The main purpose of this paper is to use the properties of Gaussiansums and the analytic method to study the problem of calculatingone kind of character sums modulo q, and to give an interestingidentity. 2000 Mathematics Subject Classification 11L10, 11L40.     

Research of spatial resolution in external electro-optic probing

A new method, based on zero point of longitudinal electric field, was used to determine the spatial resolution of external electro-optic (EO) probing equipment. Considering the diffraction of Gauss beam, the result of external EO probing was simulated which was in accordance with the experiment. A spatial resolution <1 μm was demonstrated initially in our equipment using 650 nm laser diode as probe beam and semi-insulating GaP as probe tip.     

High photosensitivity in cis-polyphenylacetylene films irradiated with 60Co γ-ray

This paper reports that ⁶⁰Co γ-ray irradiation can convert cis-polyphenylacetylene (cis-PPA) films prepared with rare-earth coordination catalysts to highly photosensitive materials. The dependence of the photosensitivity on irradiation dose, preparation methods, and microstructure of the PPA films has been investigated by means of a potential discharge technique. The photosensitivity was enhanced with increasing irradiation dose. The critical dose to produce a light response was 5 × 10³ Gy. The maximum surface potential discharge rate was 618 V/s, and the dark decay was approximately 2 V/s for cis-PPA films irradiated with ⁶⁰Co γ-ray (dose: 2 × 10⁵ Gy). The cis-transoidal-PPA and an electrophotographic photoreceptor device incorporating cis-PPA showed a higher irradiation effect. The structure and properties of ⁶⁰Co γ-ray irradiated rare-earth PPA films are similar to the unirradiated films.     

A theoretical study of the ion pair SN2 reaction between lithium isocyanates with methyl fluoride with inversion and retention mechanism

This paper is devoted to a detailed theoretical study of an ion pair S_N2 reaction LiNCO+CH₃F in the gas phase and in solution at the level of MP2(full)/6-31+G**//HF/6-31+G**. Two possible reaction mechanisms, inversion and retention, are discussed. There are eight possible reaction pathways. The inversion mechanism is more favorable no matter in the gas phase or in solution based on analyses of the transition structures. Methyl isocyanate should form preferentially in the gas phase and more stable methyl cyanate is the main product in solution. The retardation of the reaction in solvents was attributed to the difference in solvation in the separated reactants and in the transition state.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

Crystallographic report: Bis{[diacetyl‐bis(2,6‐isopropylphenylimine)]nickel(I)(µ‐chloro)}

The first α‐diimine nickel(I) complex having a chloro bridge is reported. The centrosymmetric dinuclear structure of {[ArN?C(Me)C(Me)?NAr]NiCl}₂[Ar?2,6?C₆H₃(i‐Pr)₂] features two chelating α‐diimine ligands and two bridged chlorine atoms, so that a distorted tetrahedral N₂Cl₂ coordination geometry for nickel results. Copyright © 2004 John Wiley & Sons, Ltd.     

正交各向异性矩形板受迫振动的三维分析

从正交各向异性三维弹性动力学的控制方程出发，在求得四边简支矩形板自由振动频率和位移振型的基础上，构造了受迫振动的位移函数；利用自由振动位移振型的正交性，将控制方程的空间变量和时间变量分离，得到了广义质量、广义力和频率表示的关于时间的2阶常微分方程，从而得到了正交各向异性弹性矩形板在受迫振动下的位移场和应力场．给出了本文方法与薄板理论的算例．     

介孔网络电路

用二次阳极氧化法制备纳米多孔氧化铝板,然后用磁控溅射方式在纳米多孔氧化铝板表面镀金得到介孔网络电路,对该介孔网络电路进行输运测量,发现其具有非线性电阻.