Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

On Polynomial Functions over Finite Commutative Rings

Let R be an arbitrary finite commutative local ring. In this paper, we obtain a necessary and sufficient condition for a function over R to be a polynomial function. Before this paper, necessary and sufficient conditions for a function to be a polynomial function over some special finite commutative local rings were obtained.     

病毒感染群体动力学模型分析

本文构建并讨论了一类病毒感染的群体动力学模型,得到了模型存在轨道稳定周 期解的充分条件,较好地解释了在病毒持续感染者体内观察到的病毒载量波动现象.     

每个算子都是两个强不可约算子的和

本文证明了可分无穷维 Hilbert空间上每个有界线性算子均可写成两个强不可约算子之和 .这回答了文献 [9]中提出一个公开问题     

摄像型等厚干涉实验仪器的研究

介绍了“摄像型等厚干涉实验仪”的构造及等厚干涉实验新的测量方法。     

马科维兹资产组合选择模型的旋转算法

提出线性不等式组的一种旋转算法，并用其求解马科维兹资产组合选择模型，此算法每次迭代约需n^2次乘法和加法，其中n是模型中变量的数目，在微机上运行Delphi程序的实验结果表明，从上海和深圳股市1072支股票70期周末收盘价计算出20个最优投资组合仅需314次迭代和45s。     

New Exact Solutions to the Combined KdV and mKdV Equation

The modified mapping method is developed to obtain new exact solutions to the combined KdV and mKdV equation. The method is applicable to a large variety of nonlinear evolution equations, as long as odd- and even-order derivative terms do not coexist in the equation under consideration.     

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

在超高真空分子束外延（MBE）生长技术中，反射式高能电子衍射仪（RHEED）能实时显示半导体和金属外延生长过程，给出薄膜表面结构和平整度的信息，成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导（YBa₂Cu₃O₇） 、铁电薄膜（Sr_1-xBa_x TiO₃）及它们的同质和异质外延结构的生长机理，获得高质量的符合各种应用 需要的氧化 物多层薄膜结构，在常规的制备氧化 关键词： 高温超导薄膜 RHEED     

Dirichlet型空间上的乘子

本文主要根据τ与μ的不同取值分三种情况刻划了Cn中单位球上Dirichlet 型空间上的点乘子空间M(Dτ,Dμ),并通过两个函数的构造表明:当τ≤n时,包含 关系M(Dτ)(?)Dτ和当τ>μ,τ>n-1时,包含关系M(Dτ)(?) M(Dμ)是严格的.