Decrease in the group velocity of a light pulse in the Bose-Einstein condensate of a dilute gas

A semiclassical theory of electromagnetically induced transparency in a Bose-Einstein condensate is considered. A nonlinear Schrödinger equation that describes the interaction of the Bose-Einstein condensate with an electromagnetic field is derived. An analysis of the obtained solutions to this equation demonstrates a decrease in the group velocity of the light pulse.     

Photoluminescence of liquid-crystal azo derivatives in nanopores

Optics and Spectroscopy - The fluorescence of the nematic liquid crystal n-butyl-n′-methoxyazoxybenzene (BMAOB) in the form of a layer and in porous glasses with pores of different diameter...     

A microspectroscopic study of the electronic homogeneity of ordered and disordered Sr2FeMoO6

Disordered Sr₂FeMoO₆ shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish that e_xtensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with composition fluctuations of the type Sr₂Fe_1+x Mo_1-x O₆ with Fe-rich (x > 0) and Mo-rich (x < 0) regions. Dedicated to Prof J Gopalakrishnan on his 62nd birthday.     

Synchronization through system interconnections

An interconnection strategy with built-in adaptive controllersis presented which achieves synchronization of scalar linearsystems: the closed-loop network forces all outputs to followthe same signal asymptotically while maintaining the open-loopcharacteristics. In the design of the output feedback controllers,no knowledge of system parameters is assumed, but each systemmust have the same poles and be high-gain-stable. The proofof the main theorem relies critically on derived systems-theoreticresults and the special system topology as a network of interconnectedsystems. The topology is explained by first solving the simplerproblem of signal synchronization.     

An implicit characteristic-flux-averaging method for the euler equations for real gases

A formulation of an implicit characteristic-flux-averaging method for the unsteady Euler equations with real gas effects is presented. Incorporation of a real gas into a general equation of state is achieved by considering the pressure as a function of density and specific internal energy. The Ricmann solver as well as the flux-split algorithm are modified by introducing the pressure derivatives with respect to density and internal energy. Expressions for calculating the values of the flow variables for a real gas at the cell faces are derived. The Jacobian matrices and the eigenvectors are defined for a general equation of state. The solution of the system of equations is obtained by using a mesh-sequencing method for acceleration of the convergence. Finally, a test case for a simple form of equation of state displays the differences from the corresponding solution for an ideal gas.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.