Asymptotic Analysis of Vertical Branch-Cut Integral of Shear Waves in a Fluid-Filled Borehole Utilizing the Steepest-Descent Method

We obtain an asymptotic solution to the vertical branch-cut integral of shear waves excited by an impulsive pressure point source in a fluid-filled borehole, by taking the effect of the infinite singularity of the Hankel functions related to shear waves in the integrand at the shear branch point into account and using the method of steepest-descent to expand the vertical branch-cut integral of shear waves. It is theoretically proven that the saddle point of the integrand is located at ks-i/z, where ks and z are the shear branch point and the offset. The continuous and smooth amplitude spectra and the resonant peaks of shear waves are numerically calculated from the asymptotic solution. These asymptotic results are generally in agreement with the numerical integral results. It is also found by the comparison and analysis of two results that the resonant factor and the effect of the normal and leaking mode poles around the shear branch point lead to the two-peak characteristics of the amplitude spectra of shear waves in the resonant peak zones from the numerical integral calculations.     

Liquid Nuclear Magnetic Resonance Implementation of Quantum Computation in Subspace

Based on the logical labelling method, we prepare an effective pure state in a subsystem of a three spin system via liquid nuclear magnetic resonance technique. Then with this subspace effective pure state we implement the Deutsch-Jozsa algorithm. The tomography for the subspace effective pure state and the corresponding spectrum of the output for the Deutsch-Jozsa algorithm agree with theoretical predictions, which shows that we have successfully implemented the Deutsch-Jozsa algorithm in a subsystem of a nuclear spin system and demonstrated a subspace quantum computation.     

Effect of Molecular Weight on Liquid Crystal Photoalignment by Photosensitive Polyester Containing Thrifluoromethyl Moieties

We investigate the liquid-crystal （LC） alignment direction on photoalignment films formed from photosensitive polyester containing thrifluoromethyl moieties （PPDA） with various molecular weights by crossed polarized optical microscopy. It is found that LC alignment behaviour changes with molecular weight of PPDA. The LC alignment on PPDA irradiated films with the highest molecular weight is homogeneous, while those with low and intermediate molecular weights are homeotropic. However, surface morphologies show weak dependence on molecular weight. The surfaces are smooth and there is no clear morphological anisotropy on these aligned films observed by an atomic force microscope. The surface energies of the irradiated films are also measured by using an indirect contact-angle method where both surface energy and its polar component, increase with increasing molecular weight. Different polar surface energies can be considered as a main reason for different alignment characteristics.     

短波段光学减反膜的溶胶-凝胶法制备及性能分析

 随着大型激光器的发展，对短波段减反膜的要求日益提高，其中钕玻璃激光三倍频（355nm）的减反射成为新的技术要点。采用溶胶-凝胶工艺合成SiO₂溶胶，采用提拉镀膜法制备纳米多孔SiO₂薄膜，薄膜厚度为75nm，折射率控制在1.22，镀制在石英基底上的薄膜其355nm波长的反射率仅为0.2%。通过氨处理工艺和薄膜的表面修饰，薄膜的抗磨擦性能和疏水性能大大提高，薄膜经过蘸有灰尘、乙醇的棉花球擦洗20次和50次后，透射率最大值仅分别降低0.13% 和 0.39%，与水珠的接触角达到110°。     

免跟踪透射式太阳聚光器的设计

针对目前太阳聚光器中因为自动跟踪系统故障率高导致使用成本大幅度增加的主要制约因素,在多年来探讨有效提高太阳能密度的基础上,提出了免跟踪线性菲涅尔透射式太阳聚光器设计的新思路,并对其结构形式和工作原理进行了阐述.     

叶绿素紫外吸收特性的分析研究

鉴于光合作用对人类生存和发展的极其重要的地位,本文选取其关键载体——叶绿素进行其光谱的分析研究。在理论分析的基础上,使用WGD-8A型多功能组合光谱仪测量并分析了叶绿素的紫外吸收特性。结合实验结果和前人的研究成果,得出叶绿素在紫外波段281nm和312nm处有较强的吸收峰,紫外线对于光合作用有促进作用的结论,并提供了一种测量叶绿素含量的方法。     

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1-xCx:H Films

Composition in amorphous Si1-xCx：H heteroepitaxial thin films on Si （100） by plasma enhanced chemical vapour deposition （PECVD） is analysed. The unknown x （0.45-3.57） and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum （RBS）, resonance-nuclear reaction analysis （R-NRA） and elastic recoil detection （ERD）, respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing （RTA） or laser spike annealing （LSA） in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150℃ annealing. RTA can reduce hydrogen in SiC films effectively than LSA.     

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment

The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N₂ are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O₂. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N₂)_O to the N atom number on O site (N_O) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N₂, the percentage content of (N₂)_O is larger than that of N_O, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O₂, the percentage content of (N₂)_O is fewer than that of N_O, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N₂ and that of ZnO:N film annealed in O₂. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N₂, this emission band is due to donor-bound exciton (D⁰X). After annealed in O₂, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A⁰X).     

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4mCi/cm^2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44nA/cm^2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.     

高压下限域富勒烯分子体系构筑的新结构

探索新的碳结构是物理、材料等学科关注的热点课题. 富勒烯分子可看成是一种零维碳结构,其独特的结构和优异的性质为构筑新碳结构提供了理想的构筑单元. 本文介绍了利用限域与高压相结合的方法,在富勒烯限域体系研究中取得的进展,包括溶剂化富勒烯、富勒烯填充单壁碳纳米管（Peapod）限域体系的高压结构转变,总结了溶剂分子等对限域富勒烯高压结构相变与新结构形成的影响. 结果对新型碳结构的设计与构筑提供了新的思路与有益参考.