Adhesion measurement of thin films by a modified laser spallation technique: theoretical analysis and experimental investigation

Laser driven shocks can lead to a dynamic failure, called film spallation. Here, we use a modified laser spallation set-up to measure the dynamic adhesion of thin films and we propose a novel diagnostic technology. Based on correlation theory, new spallation criteria for characterizing the progressive damage at the interface between the film and the substrate are established, such as interface delamination, film spallation and film expulsion. With the help of the theory, the degree of damage and the dimension of damage (i.e. fracture), such as the minimum width of delamination radius, the thickness of the film etc., are estimated. Experiments are carried out on epoxy/stainless steel and epoxy/Al, and the experimental results show that their dynamic bonding strengths are about 25 MPa and 20 MPa, respectively. The detailed results, analyses and discussions are presented in this paper. Received: 6 February 2001 / Accepted: 3 December 2001 / Published online: 11 February 2002     

A microprocessor based autoscanner for electromigration studies in thin films

Mass transport due to electromigration can be estimated if the diffusion coefficientD and the electromigration effective charge numberZ* are known. Neutron activated tracer scanning method determine the radioactivity at different positions. An automatic scanning system for determining the radioactive concentration profiles developed using a microprocessor is described in this paper. Using the radioactive concentration profiles the electromigration shift is determined. From this shift the electromigration effective charge numberZ* is calculated. The system developed was tested for tin thin films.     

Parametric and Non Homogeneous Semi-Markov Process for HIV Control

In AIDS control, physicians have a growing need to use pragmatically useful and interpretable tools in their daily medical taking care of patients. Semi-Markov process seems to be well adapted to model the evolution of HIV-1 infected patients. In this study, we introduce and define a non homogeneous semi-Markov (NHSM) model in continuous time. Then the problem of finding the equations that describe the biological evolution of patient is studied and the interval transition probabilities are computed. A parametric approach is used and the maximum likelihood estimators of the process are given. A Monte Carlo algorithm is presented for realizing non homogeneous semi-Markov trajectories. As results, interval transition probabilities are computed for distinct times and follow-up has an impact on the evolution of patients.      

200 femtosecond impulse response of a Fabry–Pérot etalon with the spectral ballistic imaging technique

We use the spectral ballistic imaging technique to measure the impulse response of a Fabry–Pérot etalon with less than 0.2 ps temporal resolution. The results show excellent agreement with the theoretical predictions and negligible noise. Comparison to the Kramers–Kronig method along with its limitations is also presented. PACS 42.65.Re; 07.60.Ly; 42.30.Kq     

Bump formation on a glass surface with a transparent coating using femtosecond laser processing

The morphology of a glass surface having a transparent coating processed with focused femtosecond laser pulses is investigated. The transparent coating is formed of poly-methyl methacrylate (PMMA). When the glass was coated with a PMMA film with a thickness of 2.8 μm, bumps were formed over a wide range of axial focus positions. The same laser pulse energy produced cavities when processing bare glass with no coating. The bumps were formed as a result of suppressing material emission from the glass surface by a shielding effect of plasma generated by ablation of the PMMA film and by physical blocking of the PMMA film. A thinner film with a thickness of 0.7 μm produced a reduced shielding effect, forming an exploded bump with a small pit at its center and debris around the periphery. PACS 44.10.+i; 61.80.Ba; 79.20.Ds     

146Ce核的八级形变带和准γ带

通过测量²⁵²Cf自发裂变所产生的瞬发γ射线, 对¹⁴⁶Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对¹⁴⁶Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.     

Euler configurations and quasi-polynomial systems

Consider the problem of three point vortices (also called Helmholtz’ vortices) on a plane, with arbitrarily given vorticities. The interaction between vortices is proportional to 1/r, where r is the distance between two vortices. The problem has 2 equilateral and at most 3 collinear normalized relative equilibria. This 3 is the optimal upper bound. Our main result is that the above standard statements remain unchanged if we consider an interaction proportional to r ^b, for any b < 0. For 0 < b < 1, the optimal upper bound becomes 5. For positive vorticities and any b < 1, there are exactly 3 collinear normalized relative equilibria. The case b = −2 of this last statement is the well-known theorem due to Euler: in the Newtonian 3-body problem, for any choice of the 3 masses, there are 3 Euler configurations (also known as the 3 Euler points). These small upper bounds strengthen the belief of Kushnirenko and Khovanskii [18]: real varieties defined by simple systems should have a simple topology. We indicate some hard conjectures about the configurations of relative equilibrium and suggest they could be attacked within the quasi-polynomial framework.     

Condensation film on an inclined rotating disk

The three dimensional problem of steady fluid deposition on an inclined rotating disk is solved by similarity transform. For a given spraying rate there may be one, two or no steady state solution. The inclination causes a downward draining flow and a lateral flow. Perturbation solutions compare well with exact similarity solutions when the fluid film is thin.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

System dependence of the correlation function of IMFs in Ar + Sn at 35 MeV/u

The inclusive reduced velocity correlation functions of the intermediate mass fragments were measured in the reactions of ³⁶Ar + ^112,124Sn at 35 MeV/u. The anti-correlation is observed to be stronger in ³⁶Ar + ¹²⁴Sn system than that in ³⁶Ar + ¹¹²Sn. The difference of the correlation functions between the two reactions is mainly contributed by the particle pairs with high momenta. A three body Coulomb repulsive trajectory model is employed to calculate the emission time scale of the IMFs for the two systems. The time scale is 150 fm/c in ³⁶Ar + ¹¹²Sn and 120 fm/c in the ³⁶Ar + ¹²⁴Sn, respectively.