正交试验设计在麦白霉素高产菌株选育中的应用

本文应用正交试验设计改进了麦白霉素的生产工艺，在四个关键环节上选出了比对照组高出７００μ／ｍｌ以上的高产稳定菌株。该法使试验次数减少，选育周期缩短，既节省了人力物力和降低了生产成本，又增加了麦白霉素药粉的产量，取得了可观的经济效益。     

基于简单MOPA结构实现3.08 kW全光纤窄线宽线偏振激光输出

基于简单的主振荡功率放大结构,演示了一种高功率窄线宽线性偏振全光纤激光器,其最大输出功率为3.08 kW,3 dB线宽为0.2 nm。在整个功率缩放过程中,偏振消光比约为94%,光束质量M ²约为1.4。这是国内外首次实现3 kW全保偏光纤激光输出,与基于相位调制的窄线宽激光器相比,该激光器可实现近似的线宽,同时具有受激布里渊散射阈值高、系统结构简单、成本低等特点。     

表面喷砂对有机玻璃沿面闪络性能影响

绝缘子表面粗糙处理是提升其沿面闪络性能的重要途径,表面粗糙化处理方式不当,极易带来表面结构不均匀,难以获得稳定耐压性能的绝缘材料。为提升绝缘子表面粗糙处理的均匀性,本文利用表面喷砂技术对圆柱形有机玻璃（PMMA）绝缘子进行了粗糙化处理研究,以球形二氧化硅（SiO₂）颗粒为工作介质,研究了不同喷砂粒径、氢氟酸后处理等因素对绝缘材料表面形貌和组分的影响,并利用短脉冲高压测试平台对喷砂处理前后有机玻璃绝缘子样品进行了真空沿面闪络性能测试。研究结果表明,喷砂处理在有机玻璃表面形成了较为均匀的凹坑,HF酸能够有效去除表面残留的SiO₂颗粒,具有表面喷砂粗糙结构的绝缘子沿面闪络电压得到了稳定提升,相较于未处理的绝缘子闪络电压提升了约80%。     

Optical Trapping with Focused Surface Waves

Near-field optical trapping can be realized with focused evanescent waves that are excited at the water–glass interface due to the total internal reflection, or with focused plasmonic waves excited on the water–gold interface. Herein, the performance of these two kinds of near-field optical trapping techniques is compared using the same optical microscope configuration. Experimental results show that only a single-micron polystyrene bead can be trapped by the focused evanescent waves, whereas many beads are simultaneously attracted to the center of the excited region by focused plasmonic waves. This difference in trapping behavior is analyzed from the electric field intensity distributions of these two kinds of focused surface waves and the difference in trapping behavior is attributed to photothermal effects due to the light absorption by the gold film.     

Sparse Multicategory Generalized Distance Weighted Discrimination in Ultra-High Dimensions

Distance weighted discrimination (DWD) is an appealing classification method that is capable of overcoming data piling problems in high-dimensional settings. Especially when various sparsity structures are assumed in these settings, variable selection in multicategory classification poses great challenges. In this paper, we propose a multicategory generalized DWD (MgDWD) method that maintains intrinsic variable group structures during selection using a sparse group lasso penalty. Theoretically, we derive minimizer uniqueness for the penalized MgDWD loss function and consistency properties for the proposed classifier. We further develop an efficient algorithm based on the proximal operator to solve the optimization problem. The performance of MgDWD is evaluated using finite sample simulations and miRNA data from an HIV study.     

Applications of Markov spectra for the weighted partition network by the substitution rule

The weighted self-similar network is introduced in an iterative way. In order to understand the topological properties of the self-similar network, we have done a lot of research in this field.Firstly, according to the symmetry feature of the self-similar network, we deduce the recursive relationship of its eigenvalues at two successive generations of the transition-weighted matrix.Then, we obtain eigenvalues of the Laplacian matrix from these two successive generations.Finally, we calculate an accurate expression for the eigentime identity and Kirchhoff index from the spectrum of the Laplacian matrix.     

衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响

本文研究了不同衬底温度对Ga液滴在Al_(0.4)Ga_(0.6)As表面形成纳米结构的影响,当300℃≤T≤380℃时,Ga液滴演化成纳米孔(Nanohole)和盘状结构(diffusion halo),纳米结构的尺寸随温度升高而增大.当T≥385℃时,盘状结构消失,形成一定平坦的Al_xGa_(1-x)As薄膜,Ga液滴在界面处继续向下刻蚀直至耗尽,形成平均直径为75 nm,平均孔深为5.52 nm的纳米孔.本文还通过盘状结构测出平均扩散长度△R,并拟合出Ga原子在Al_(0.4)Ga_(0.6)As表面的激活能E_A=0.78(±0.01) eV和扩散前因子D_0=0.15(×4.1~(±1))10~(-2 ) cm~2s~(-1).     

OCS分子在128 nm附近的光解动力学研究：S(3PJ=2,1,0)、S(1D2)以及S(1S0)产物通道

本文利用时间切片离子成像技术对OCS分子进行了真空紫外波段的光解动力学研究. 在四个光解光波长(从129.32到126.08 nm)下测量了硫原子解离产物S(³P_J=2,1,0)、S(¹D₂)、S(¹S₀)的速度影像,并从中清晰地发现了四个主要的解离产物通道：S(³P_J=2,1,0)+CO(X¹Σ⁺),S(³P_J=2,1,0)+CO(A³π),S(¹D₂)+CO(X¹Σ⁺)和S(¹S₀)+CO(X¹Σ⁺). 在实验影像中,产物CO分子的部分振动态结构能够得到分辨. 实验还获取解离产物总平动能谱,产物分支比和角分布. 对实验结果进行分析显示除绝热解离通道S(³P_J=2,1,0)+CO(A³π)之外,在其他三个产物通道中非绝热效应都起到非常重要的作用.     

损伤材料裂纹尖端附近的应力场

本文导出了损伤材料的全量理论,导出了全量公式中H的渐近表达式;最后得到损伤材料平面应变条件下的裂纹尖端的应力应变场。