SXDG-1型汽车前照灯全自动检测仪的微机控制

SXDG—1型汽车前照灯全自动检测仪是用于检测汽车前照大灯光轴的偏斜情况及发光强度并进行定量检验的专用设备。它可以自动测出有关参数,并予以数字显示和打印输出。本文介绍了该仪器的主要性能、工作原理及微机控制系统(包括硬件结构和软件设计思想等)。     

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

介绍了采用紫外光化学汽相淀积(UVCVD)、超高真空化学汽相淀积(UHVCVD)和超低压化学汽相淀积(ULPCVD)技术研制的化学汽相淀积(CVD)工艺系统,简称U³CVD系统.应用该系统,在450℃低温和10^-7Pa超高真空环境下研制出了硅锗(SiGe)材料和硅锗异质结双极晶体管(SiGe HBT)材料.实验表明,该系统制备的SiGe HBT材料性能良好.     

A Rapid Solid-phase Synthesis to Soluble Oligothiophene Molecular Wires

A novel method for the preparation of oligothiophene molecular wires is described via a bi-directional solid-phase synthesis. Using an alternating sequence of bromination and Stille coupling reactions, oligomers were obtained up to the heptamer in excellent yield and purity.     

模拟退火法在吸收薄膜的椭偏反演算法中的应用

将一种广泛用于求解复杂系统优化问题的技术－－模拟退火法－－用来求解椭偏反演方程。首先假设一个薄膜模型，计算出其相应的椭偏参数（Ψ，Δ）的值，在这个计算值的基础上加入不同标准偏差的高斯噪声；然后将加入噪声后的值（Ψm,Δm)作为模拟的测量数据，采用模拟退火算法进行求解，验证得知这种方法求得的薄膜参数很接近于假设的薄膜模型参数的真值，与其他文献的报道结果一致，而且在扩大搜寻范围时，仍然可以得到准确解，从而证明了该方法的可行性以及有效性。     

用于近场集成光学头微透镜器件的灰度掩模技术

讨论了制作适用于近场集成光学头中的凸形、凹形微透镜和折衍射复合微透镜的灰度掩模技术。定性地给出了与几种典型的凸形、凹形微透镜和折衍射复合微透镜对应的灰度掩模版的设计实例 ,以及将它应用于光刻操作的情况 ,为采用灰度掩模技术制作适用于近场集成光学头中的微透镜器件奠定了基础。灰度掩模技术在微透镜器件的制作方面具有重要的应用前景 ,有助于简化制备工艺 ,降低制作成本 ,优化微透镜阵列的结构参数。     

Microstructure of a-SiOx:H

A set of a-SiO_x:H (0.52 <x< 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si₂O:H, SiO:H, Si₂O₃:H and SiO₂ that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si₂O:H, SiO:H, Si₂O₃:H, and SiO₂.     

Phonon–replica transitions in InGaN/GaN quantum well structures

A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states.     

Influence of fluoride on f-f transitions of Eu in LiEuM2O8 (M=Mo, W)

The influence of fluoride on the luminescence of LiEuM₂O₈ (M=Mo, W) was studied. LiEuMo₂O₈ and LiEuW₂O₈ formed the whole range of solid solutions, which emitted intense red luminescence under the excitations by 395, 465 and 535 nm wavelengths. When doped with fluoride, the materials also formed solid solutions and the luminescent intensity was remarkably enhanced. The phosphor with optimized compositions in this system would be a promising red component for solid-state lighting devices based on GaN light-emitting diodes.     

橙皮素A的NMR研究

橙皮素A是从中药北沙参(Glehnia littoralis Fr. Schmidt ex Miquel)的正丁醇萃 取物中分离得到的一种8-O-4′-型异木脂素苷类化合物. 通过化学方法和波谱分析鉴 定了该 化合物的结构. 采用2D NMR技术对其NMR信号进行了全归属. DMSO-d₆代替CD₃OD作为溶剂，并利用重水交换，能准确读出偶合常数J_7,8值. 