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981.
We have synthesized cone-like GeO2 structures via thermal heating of Ge powders. We have investigated the effects of substrate temperature on the sample morphology, revealing that cone-shaped structures are preferentially obtained at higher temperature. The cone-shaped structures, which gradually become thinner to form a sharp tip, appear to be a single-crystalline, hexagonal structure of GeO2. Room-temperature photoluminescence measurement revealed two emission peaks, at about 2.78 and 3.04 eV.  相似文献   
982.
Temperature dependent behavior of the responsivity of InAs/GaAs quantum dot infrared photodetectors was investigated with detailed measurement of the current gain. The current gain varied about two orders of magnitude with 100 K temperature change. Meanwhile, the change in quantum efficiency is within a factor of 10. The dramatic change of the current gain is explained by the repulsive coulomb potential of the extra carriers in the QDs. With the measured current gain, the extra carrier number in QDs was calculated. More than one electron per QD could be captured as the dark current increases at 150 K. The extra electrons in the QDs elevated the Fermi level and changed the quantum efficiency of the QDIPs. The temperature dependence of the responsivity was qualitatively explained with the extra electrons.  相似文献   
983.
The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a 60Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ~250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ~300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.  相似文献   
984.
The synergistic effect of H(2)O(2) production and sonochemiluminescence (SCL) was studied under both orthogonal and opposite dual irradiation at the frequencies of 28, 584 and 970 kHz and at various acoustic powers. The largest reduction in H(2)O(2) production was observed under opposite dual irradiation at a 28/28 kHz frequency without considering the acoustic power levels. The largest enhancement was observed under dual irradiation at a frequency of 28/970 kHz. This enhancement might be due to the increased number of bubbles that underwent violent collapse by low frequency ultrasound (28 kHz). These results were also confirmed by observing the SCL. Under dual irradiation at relatively high frequencies (i.e., 584 and 970 kHz), the synergistic effect was high at low acoustic power levels. However, the effect tended to decrease (to the equivalent of the calculation from the result of each single irradiation) with increasing acoustic power. Unlike dual irradiation coupled with a frequency of 28 kHz, the inhibition effect was not observed under dual irradiation at relatively high frequencies. With respect to H(2)O(2) production, the production rate constants of H(2)O(2) followed the order of 584/584>584/970>28/970≈28/584>28/28 kHz, which resulted from the fact that the production efficiency of H(2)O(2) at an irradiation frequency of 584 kHz was considerably higher than that at other frequencies.  相似文献   
985.
Flake-built 3D β-In2S3 nanostructures were synthesized by thermolysis of S-methyl dithiocarbazate–indium(III) complex precursor in hexamethylenediamine (HMDA). XRD patterns showed that the cubic phase of 3D β-In2S3 remained unchanged but the crystallinity was increased after annealing at 400 °C for 20 min. The products were also characterized by SEM, TEM, and EDS. Based on the experimental results, we propose that the growth of 3D nanostructures is controlled by the stability of the intermediate chelate complex made by indium(III) and solvent. The optical properties of the 3D β-In2S3 nanostructures were also investigated by UV–Vis and PL spectroscopy, which indicated strong quantum confinement effect.  相似文献   
986.
We look for a Brans-Dicke type generalization of Horava-Lifshitz gravity. It is shown that such a generalization is possible within the detailed balance condition. Classically, the resulting theory reduces in the low energy limit to the usual Brans-Dicke theory with a negative cosmological constant for certain values of parameters. We then consider homogeneous, isotropic cosmology and study the effects of the new terms appearing in the model.  相似文献   
987.
We investigated the influences of different types of temporal correlations in the input signal on the functions and coding properties of neurons in the primary visual cortex (V1). We found that the temporal transfer functions of V1 neurons exhibit higher gain, and the spike responses exhibit higher coding efficiency and information transmission rates, for the 1/f (natural long-term correlation) signals than for 1/f(0) (no correlation) and 1/f(2) (stronger long-term correlation) signals. These results suggest that the intermediate long-term correlation ubiquitous to natural signals may play an important role in shaping and optimizing the machinery of neurons in their adaptation to the natural environment.  相似文献   
988.
We report an additional reversal mechanism of magnetic vortex cores in nanodot elements driven by currents flowing perpendicular to the sample plane, occurring via dynamic transformations between two coupled edge solitons and bulk vortex solitons. This mechanism differs completely from the well-known switching process mediated by the creation and annihilation of vortex-antivortex pairs in terms of the associated topological solitons, energies, and spin-wave emissions. Strongly localized out-of-plane gyrotropic fields induced by the fast motion of the coupled edge solitons enable a magnetization dip that plays a crucial role in the formation of the reversed core magnetization. This work provides a deeper physical insight into the dynamic transformations of magnetic topological solitons in nanoelements.  相似文献   
989.
Lee MS  Lalanne P  Rodier JC  Cambril E 《Optics letters》2000,25(23):1690-1692
Blazed-binary gratings for which a blazed effect with binary etches is achieved under normal incidence offer first-order diffraction efficiencies larger than those of blazed-échelette gratings in the resonance domain [Opt. Lett. 23 1081 (1998)]. We provide further insight into the behavior of blazed-binary gratings and show that they operate efficiently under symmetrical mounting and over a wide field-angle interval. These properties are illustrated with theoretical and experimental results obtained for an approximately 1000-line/mm grating at 633 nm.  相似文献   
990.
The Vircator II oscillating virtual-cathode microwave source operates with diode voltages between 600 and 800 kV and diode current between 50 and 120 kA. Maximal microwave output power between 200 and 500 MW is achieved when the diode aspect ratio, cathode surface, charge voltage, and extraction coupling are arranged to simultaneously (1) maximize diode voltage, (2) satisfy magnetic insulation criteria, (3) avoid nonuniform or unstable electron emission, and (4) optimize microwave transmission from the virtual cathode to the launching antenna. Broadband radiation between 0.4 and 5.5 GHz is generated. The central frequency follows the beam plasma frequency. It is tuned by varying the current density with anode-cathode gap adjustments  相似文献   
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