温压结合超高压处理对芽孢杀灭作用的研究进展

 详细介绍了温压结合超高压杀菌技术的优点,指出其独特的应用优势,深入完整地综述了温压结合超高压处理对各类细菌芽孢的杀灭作用及动力学研究成果,并对温压结合超高压处理杀灭芽孢的机理做了初步总结。在此基础上,分析了该研究领域尚存在的问题,提出了未来的研究重点和方向。     

量子光学态的Ridgelet变换

利用有序算符内积分技术推导出一个有用的双模算符正规乘积公式. 然后在量子力学框架下, 计算出相干态、特殊压缩相干态、中介纠缠态表象的Radon变换. 在此基础上, 通过选取“墨西哥帽”母小波函数, 分别分析了以上三种量子光学态的Ridgelet变换. 关键词： 有序算符内积分技术 Radon变换 Ridgelet变换     

Analysis of the mechanisms of electron recombination in HgCdTe infrared photodiode

This paper presents an experimental study of minority carrier lifetime and recombination mechanisms in HgCdTe photodiode. The excitation light source is a wavelength-tunable pulsed infrared laser. A constant background illumination has been introduced to minimize the effect of the junction equivalent capacitor and resistance. The decay of the photo-generated voltage is recorded by a storage oscilloscope. By fitting the exponentially decay curve, the time constant has been obtained which is regarded as the photo-generated minority carrier lifetime of the HgCdTe photodiode. The experimental results show that the carrier lifetime is in the range of 18–407 ns at 77 K for the measured detectors of four Cd compositions. It was found that the Auger recombination process is more effective for low Cd composition while the radiative recombination process became more important for high composition materials. The Shockley–Read–Hall recombination processes could not be ignored for all Cd composition.     

空间站快速充电事件的机理研究

空间站等大型航天器由于采用高压太阳电池阵而引发的 带电问题成为近年来航天器带电研究领域的热点问题. 近年来观测到国际空间站(ISS)在出地影瞬间产生的"快速带电"事件 (也称"异常带电") , 再度引起了对低轨道航天器充电效应的深入研究. "快速带电"事件的特征为, 集中出现在出地影的瞬间, 在几秒内快速上升到较高电位(30—70 V), 然后在几十秒时间内缓慢衰降, 相对高压电池阵本身引起的结构体带电(称为"正常带电", 一般在30 V以下)严重得多. 目前国际上对"快速带电"的研究尚不充分. 本文在Furguson等人机理研究工作的基础上, 首次建立了描述"快速带电"事件的物理模型, 定量揭示了其充电过程的主要机理. 根据该模型对国际空间站的"快速带电"进行计算, 结果与观测到的典型充电脉冲符合, 模型预测的快速带电事件的统计规律也与观测结果基本一致. 关键词： 表面充电 等离子体 空间站 高压太阳电池阵     

一种新的双偶氮染料掺杂聚合物薄膜的光致双折射及偏振全息的研究

作为一种有可能作为永久信息存储的材料,合成出一种新的双偶氮材料(BA1)。当样品被波长为532nm的光激发时,几乎大部分BA1分子从反-反态转化到顺-顺态,产生了光致双折射。因此,研究了BA1分子掺杂的PMMA薄膜的光致双折射和透过信号与入射光强度的关系。实验结果表明:透过信号强度随着泵浦光的增强而增强。通过偏振态互相平行(SS)和垂直(SP)的两束偏振光用来研究偏振全息存储,结果表明SP光栅形成的衍射信号要比SS光栅的衍射信号强很多。     

非结构子网格压力方法

纯拉氏流体力学计算失败的根源是砂漏运动和虚假涡旋,运用子网格拉氏质量与其相关的子网格密度得到子网格压力,子网格压力产生的扰动隅角力能消除这些虚假运动,以便消除困扰拉氏流体力学算法的网格畸变带来的数值计算困难.将包括子网格压力的相容流体算法推广到非结构网格,研制包括非结构子网格压力的相容流体程序,对Saltzman活塞问题进行数值模拟,从数值结果分析可知,非结构子网格压力方法能抑制虚假涡旋,消除砂漏畸变.     

离子速度成像技术研究2-溴戊烷的光解离动力学

运用离子速度成像技术研究了2-溴戊烷分子在～234 nm处的光解离动力学. 通过分析光解产物Br(²P_3/2)(简称Br)和Br(²P_1/2) (简称Br*)的速度影像,分别得到其速度分布和角度分布. Br和Br*的速度分布可以用两个高斯分布拟合,分别对应于2-溴戊烷在～234 nm处两个独立的光解离反应通道. 高能的高斯分量对应于C-Br伸缩振动模式的直接解离,低能的高斯分量对应于弯曲振动和C-Br伸缩振动耦合所导致的解离. 确定出光解离产物Br的相对量子产率为0.892,结合Br和Br*碎片的各项异性参数和溴原子的相对量子产率,讨论了³Q₀、³Q₁和¹Q₁激发态分别对产物Br和Br*的贡献. 通过对比溴代戊烷4种同分异构体光解离过程的差异,讨论了分子烷基分支化对光解机理的影响.     

Analysis of total nitrogen and total phosphorus in soil using laser-induced breakdown spectroscopy

Laser-induced breakdown spectroscopy(LIBS) is used to determine the total nitrogen(TN) and total phosphorus(TP) in soil.Quantitative determinations are conducted using the line intensity of the analyte element and element concentration.Calibration models are obtained using ten samples for TN and seven samples for TP.The rest samples are used to validate the results.Strong linear correlations are obtained from the determined TN and TP concentrations.LIBS is a powerful tool for analyzing soil samples to determine nutrient elements by selecting calibration and validation samples with similar matrix composition.     

Progress in superconducting qubits from the perspective of coherence and readout

Superconducting qubits are Josephson junction-based circuits that exhibit macroscopic quantum behavior and can be manipulated as artificial atoms.Benefiting from the well-developed technology of microfabrication and microwave engineering,superconducting qubits have great advantages in design flexibility,controllability,and scalability.Over the past decade,there has been rapid progress in the field,which greatly improved our understanding of qubit decoherence and circuit optimization.The single-qubit coherence time has been steadily raised to the order of 10 to 100μs,allowing for the demonstration of high-fidelity gate operations and measurement-based feedback control.Here we review recent progress in the coherence and readout of superconducting qubits.     

Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance

One of the key differences of a semiconductor optical amplifier (SOA) with internal lasing oscillation (ILO) from a SOA with external light injection (ELI) lies in a carrier-sharing mechanism. Since the internal lasing mode shares the same pool of carriers with the signals, the carriers (or photons) withdrawn from the circulating laser mode speed up the gain recovery. On the other hand, the external light injected into the SOA shortens the carrier recovery time through optical pumping without any carrier sharing involved. To find out a better scheme, we have made a comparative investigation on the effects of the ILO and ELI on the SOA performance. It turns out by way of simulation that the ELI scheme provides faster gain recovery, shorter carrier lifetime, and higher saturation power when the external injection power is higher than the internal lasing power. The performance enhancement is not so pronounced with the carrier-sharing mechanism, as the internal lasing mode itself gives rise to severe longitudinal spatial hole burning (LSHB). Nevertheless, the ILO scheme is preferable for linear-amplification applications. We also examine the use of the ELI for low-crosstalk optical amplifiers. It is found that the ELI scheme does not bring in a very strong resonance peak in the crosstalk, which appears in a SOA with ILO due to relaxation oscillations of the lasing mode. In comparison to the ILO in SOAs, the ELI into SOAs is likely to leave more optical gain for multi-channel amplification without any sacrifice on the crosstalk.