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191.
A. Y. Miguelote N. A. Tomimura Anzhong Wang 《General Relativity and Gravitation》2004,36(8):1883-1918
Perfect fluid with kinematic self-similarity is studied in 2+1 dimensional spacetimes with circular symmetry, and various exact solutions to the Einstein field equations are given. These include all the solutions of dust and stiff perfect fluid with self-similarity of the first kind, and all the solutions of perfect fluid with a linear equation of state and self-similarity of the zeroth and second kinds. It is found that some of these solutions represent gravitational collapse, and the final state of the collapse can be either a black hole or a null singularity. It is also shown that one solution can have two different kinds of kinematic self-similarity. 相似文献
192.
F. R. Ling B. Wang T. Geng S. Q. Fang W. Yuan D. D. Teng C. X. Guan 《Optics & Laser Technology》2004,36(7):541-544
In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO3 crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO3 crystals were grown by the Czochralski method and oxidized in Nb2O5 powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO3 crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO3 crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO3 and Ce:Cu:LiNbO3 crystals. 相似文献
193.
Qinghai Wang 《Czechoslovak Journal of Physics》2004,54(1):143-146
This paper investigates finite-dimensional PT-symmetric Hamiltonians. It is shown here that there are two ways to extend real symmetric Hamiltonians into the complex domain: (i) The usual approach is to generalize such Hamiltonians to include complex Hermitian Hamiltonians. (ii) Alternatively, one can generalize real symmetric Hamiltonians to include complex PT-symmetric Hamiltonians. In the first approach the spectrum remains real, while in the second approach the spectrum remains real if the PT symmetry is not broken. Both generalizations give a consistent theory of quantum mechanics, but if D>2, a D-dimensional Hermitian matrix Hamiltonian has more arbitrary parameters than a D-dimensional PT-symmetric matrix Hamiltonian. 相似文献
194.
195.
用溶胶 凝胶法以磷钼酸 (MPA)的镍盐溶液水解钛酸四丁酯制备了NiPMo/TiO2 催化剂 .使用ICP、XRD、TG DTA、IR、TPD MS和微反应技术研究了催化剂的化学组成、热稳定性、化学吸附性质和催化反应性能 .杂多钼酸盐与TiO2 通过O2 -在TiO2 表面发生了键合 .在 6 2 3K下 ,杂多阴离子仍保持原有的Keggin结构 .CO2 在Lewis酸位Ni(Ⅱ )和Lewis碱位Ni-O -Mo的桥氧协同作用下生成CO2 卧式吸附态Ni(Ⅱ )←O - (CO)← (O--Ni) .丙烯有多种吸附态在催化剂上吸附 .在 5 6 3K、1MPa和空速 15 0 0h-1的反应条件下 ,丙烯的摩尔转化率为 3.2 % ,产物MAA选择性为 95 % . 相似文献
196.
Qingfa Wang Li Wang Yaquan Wang Fei He Zhenhua Li Zhentao Mi 《Reaction Kinetics and Catalysis Letters》2004,81(2):297-304
Deactivated palladium catalysts in the hydrogenation of anthraquinione were regenerated with ethanol, nitric acid, hydrogen
peroxide, boiling water and steam, respectively. The deactivated and regenerated catalysts were characterized by XPS, ICP,
TG, FTIR, TPD, XRD, etc., and studied in the hydrogenation of anthraquinone. The results showed that the main cause of catalyst deactivation is the
coverage of the active component by deposits. The treatments by hydrogen peroxide and boiling water can effectively regenerate
the deactivated catalysts.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
197.
多目标半定规划的互补弱鞍点和G-鞍点最优性条件 总被引:1,自引:0,他引:1
对于含矩阵函数半定约束和多个目标函数的多目标半定规划问题,给出Lagrange函数在弱有效意义下的互补弱鞍点和Geofrrion恰当有效意义下的G-鞍点的定义及其等价定义.然后,在较弱的凸性条件下,利用含矩阵和向量约束的择一性定理,建立多目标半定规划的互补弱鞍点和G-鞍点充分必要条件. 相似文献
198.
Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (VInH4)+ to (VInH4)0. This phenomenon was more obvious in P-rich samples that have a higher concentration of VInH4. The transformation temperature of approximately 120 K suggests that the complex VInH4 is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral VInH4 accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP. 相似文献
199.
We examine the ferroelectric-relaxor behavior of (Ba0.65Sr0.35)(Zr0.35Ti0.65)O3 (BSZT) ceramics in the temperature range from 80 to 380 K. A broad dielectric maximum, which shifts to higher temperature with increasing frequency, signifies the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ∼2 estimated from the linear fit of the modified Curie-Weiss law, indicates the relaxor nature of the BSZT ceramics. The dielectric relaxation rate follows the Vogel-Fulcher relation with TVF=107 K, Ea=0.121 eV, and ν0=6.83×1014 Hz, further supports such relaxor nature. The slim P-E hysteresis loop and ‘butterfly’ shape dc bias field dependence of permittivity at T>Tm (Tm, the temperature of permittivity maximum) clearly signifies the occurrence of nanopolar clusters, which is the typical characteristic of ferroelectric relaxor. At 300 K and 10 kHz, the dielectric constant and loss tan δ are ∼1100 and 0.0015, respectively. The high tunability (∼25%) and figure of merit (∼130) at room temperature show that the BSZT ceramics could be a promising candidate for tunable capacitor applications. 相似文献
200.
J. Wang J. Kono A. Oiwa H. Munekata C. J. Stanton 《Superlattices and Microstructures》2003,34(3-6):563
We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons. 相似文献