The factors of spontaneous parametric down conversion process in BiB3O6 crystal with a broadband pump

We investigate the spontaneous parametric down-conversion (SPDC) process in biaxial nonlinear crystal BiB₃O₆ (BIBO) with a broadband pump. Under the type I and type II phase-matching conditions, we numerically calculate the influencing factors on SPDC process in BIBO crystal, such as temporal and spatial walk-off, the acceptance angles, and spectral acceptance bandwidth. Comparing the two types of phase-matching, we could conclude that the type II phase-matching in BIBO crystal is better for the SPDC because of zero dispersion and bigger acceptance parameters. These results can be used to construct a system to generate ultra-fast entangled photon pairs.     

Electrostatic discharge effect on safe distance determination for 500 kV ac power line's helicopter inspection

The effect of electrostatic discharge on safe distance determination for 500 kV ac transmission line's helicopter inspection is investigated. Potential difference exists while helicopter is near the power transmission line, which is harmful to the inspection persons. The electric field in the helicopter cabin is calculated when it is near the power line. The result indicates that the potential difference becomes higher with the decrease of the distance between the helicopter and transmission line. Considering the discharge energy and the guarantee of the persons' safety, the safe distance for 500 kV ac transmission lines is determined as d ≥ 15 m.     

Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon

This Letter demonstrates improved passivating contacts for silicon solar cells consisting of doped silicon films together with tunnelling dielectric layers. An improvement is demonstrated by replacing the commonly used silicon oxide interfacial layer with a silicon nitride/silicon oxide double interfacial layer. The paper describes the optimization of such contacts, including doping of a PECVD intrinsic a‐Si:H film by means of a thermal POCl₃ diffusion process and an exploration of the effect of the refractive index of the SiN_x. The n⁺ silicon passivating contact with SiN_x /SiO_x double layer achieves a better result than a single SiN_x or SiO_x layer, giving a recombination current parameter of ～7 fA/cm² and a contact resistivity of ～0.005 Ω cm², respectively. These self‐passivating electron‐selective contacts open the way to high efficiency silicon solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.     

Highly enhanced low-temperature performances of LiFePO<Subscript>4</Subscript>/C cathode materials prepared by polyol route for lithium-ion batteries

Although LiFePO₄/C has been successfully put into practical use in lithium-ion batteries equipped on new energy vehicles, its unsatisfactory low temperature results in poor low performance of lithium-ion batteries, leading to a much smaller continue voyage course at extreme environments with low temperature for electric vehicles. In this paper, the electrochemical performance of the LiFePO₄/C prepared by polyol route was investigated at a temperature range from 25 to ?20 °C. Compared to commercial ones, as-prepared LiFePO₄/C shows a much better low-temperature performance with a reversible capacity of 30 mA h g^?1 even at 5 C under ?20 °C and a capacity retention of 91.1 % after 100 cycles at 0.1 C under 0 °C. Moreover, high-resolution transmission electron microscopy (HRTEM) revealed that this outstanding performance at low temperatures could be assigned to uniform carbon coating and the nano-sized particles with a highly crystalline structure.     

A New Emissive Chalcone-Based Chemosensor Armed by Coumarin and Naphthol with Fluorescence “Turn-on” Properties for Selective Detection of F<Superscript>−</Superscript> Ions

A new chalcone-based probe containing coumarin and naphthol at both ends has been synthesized via aldol condensation. The uniqueness of the newly derived probe can be ascribed to the presence of naphthol and coumarin units acting as binding site and signaling element, respectively. The fluorogenic behaviors toward various anions were investigated. The probe was characterized by various spectroscopic techniques and the in-depth study led to show excellent selectivity and sensitivity for fluoride ions. The hydrogen bonding thus formed with fluoride anion provides remarkable fluorometric responses. The interactions of the probe with fluoride ions were determined by fluorescence, FT-IR and NMR spectroscopic techniques. The exploratory studies by fluorescent spectral changes augur well for the naked-eye sensing applications.     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

长周期光纤光栅:原理、制备与应用

较全面介绍了长周期光纤光栅。对比Bragg光纤光栅说明了长周期光纤光栅的特点。对其耦合机理进行了分析 ,阐明了波长选择损耗特性。介绍了长周期光纤光栅的制备方法 ,大致分之为基于非形变的制备方法和基于形变的制备方法。详细阐述其在通信、传感领域的应用 ,尤其是新型应用 :带通滤波、光上下路复用、光纤光源、偏振器件、新型传感等。并针对长周期光纤光栅对温度、应力、外部折射率敏感的特性 ,探讨了调谐性以及温度稳定性的方案     

TE011腔使用扁平样品管提高水溶液样品ESR波谱灵敏度的研究

实验表明,在TE₀₁₁模式园柱形腔中,不但可以使用扁平样品管测量水溶液样品的ESR波谱,而且获得好的腔品质因子Q和高品质的ESR信号。所观察到的信号高度,是使用最佳尺寸毛细管样品时最大信号高度的3.2倍;又是在具有波导尺寸的TE₁₀₂腔中使用扁平样品管时所获得信号高度的3倍。本文对此作了定性的理论分析。