Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Kthe-Bochner空间的凸性(英文)

本文利用Kothe函数空间的性质以及Kothe函数空间与Kothe-Bochner空间的关系,讨论了Kothe-Bochner空间E(X)的凸性,主要结果如下: (a)给出E(X)的端点的充分条件,得到了E(X)严格凸的判据,相应地推广了Lp(μ,X) 以及Lφ(X)的结果; (b)讨论了E(X)的弱局部一致凸和局部完全k-凸; (c)刻画了E(X)的强凸,给出了F(X)强凸的充要条件．     

谈物理实验教学中学生科学素质的培养

物理教学要实现由“应试教育”向素质教育的转轨，必须改单纯的“学科教育”为“科学教育”，即不仅要让学生掌握必要的物理知识，还要为学生的整体素质发展奠定必需的科学能力和科学品质的基础．笔者通过多年的教学实践和研究深刻地认识到，在物理教学中，加强实验教学是培养学生科学素质的重要途径和关键，也是物理学科实施素质教育的一个十分重要的方面．     

考虑货架存放期的经济批量排产问题的求解

在化工、造纸、制药、钢铁等工业生产中，一台设备或一条生产线可以生产多种产品的情况很常见。在生产中，如何安排各类产品的生产顺序以及生产数量显得十分重要。这类问题通常称作经济批量排产问题，这类问题是生产库存中的经典问题。本文研究的经济批量排产问题考虑了产品货架存放期因素，针对以往研究的不足，本文提出用批量变动方法求解该类问题，由计算结果显示，按照这种排产方法花费的成本要低于其他两种经济批量排产问题常用的方法。     

从 ${\cal B}^0$ 到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子

设 $\varphi$ 是单位园盘 $D$ 到自身的解析映射, $X$ 是 $D$ 上解析函数的 Banach 空间, 对 $f\in X$, 定义复合算子$C_\varphi $ : $C_\varphi (f)=f\circ \varphi$. 我们利用从 ${\cal B}^0$到 $E(p,q)$ 和 $E_0(p,q)$ 空间的复合算子研究了空间 $E(p,q)$ 和 $E_0(p,q)$, 给出了一个新的特征.     

An Integrated Selection Formulation for the Best Normal Mean: The Unequal and Unknown Variance Case

This paper considers an integrated formulation in selecting the best normal mean in the case of unequal and unknown variances. The formulation separates the parameter space into two disjoint parts, the preference zone (PZ) and the indifference zone (IZ). In the PZ we insist on selecting the best for a correct selection (CS₁) but in the IZ we define any selected subset to be correct (CS₂) if it contains the best population. We find the least favorable configuration (LFC) and the worst configuration (WC) respectively in PZ and IZ. We derive formulas for P(CS₁|LFC), P(CS₂|WC) and the bounds for the expected sample size E(N). We also give tables for the procedure parameters to implement the proposed procedure. An example is given to illustrate how to apply the procedure and how to use the table.     

猜想M(2k,k+1)=3k-1+[(k-1)/2]的反例

Brualdi与Jung在[1]中研究了一类具有固定线和k的n×n矩阵上的最大跳跃数M(n,k),并提出猜想M(2k, k + 1) = 3k - 1 + [(k-1)/2].本文给出了这一猜想的两个反例．     

A note on minimum degree conditions for supereulerian graphs

A graph is called supereulerian if it has a spanning closed trail. Let G be a 2-edge-connected graph of order n such that each minimal edge cut SE(G) with |S|3 satisfies the property that each component of G−S has order at least (n−2)/5. We prove that either G is supereulerian or G belongs to one of two classes of exceptional graphs. Our results slightly improve earlier results of Catlin and Li. Furthermore, our main result implies the following strengthening of a theorem of Lai within the class of graphs with minimum degree δ4: If G is a 2-edge-connected graph of order n with δ(G)4 such that for every edge xyE(G) , we have max{d(x),d(y)}(n−2)/5−1, then either G is supereulerian or G belongs to one of two classes of exceptional graphs. We show that the condition δ(G)4 cannot be relaxed.     

Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

The Millimeter Wave Tomography Application for the Subsurface Imaging

In the present paper new results of modeling and experimental investigation on millimeter wave subsurface tomography are submitted. Tomographic algorithm is employed for imaging of subsurface objects in the case when conductivity of probed medium is not equal to zero. The possibilities and restrictions of this algorithm for image processing are shown both as a result of modeling and as a result of experiments. A new tomography setup allowing obtaining images of different inhomogeneities in dielectric media is considered.