Search for a reliable methodology for PSD determination based on a combined molecular simulation-regularization-experimental approach: The case of PHTS materials

We present here a methodology for searching a robust pore size distribution (PSD) for adsorbent materials. The method is based on a combination of individual adsorption isotherms, obtained from Grand Canonical Monte Carlo simulations, a regularization procedure to invert the adsorption integral equation (Tikhonov regularization solved by singular value decomposition), and the needed experimental adsorption isotherm. The selection of several parameters from the available choices to start the procedure are discussed here: the size of the kernel (number of individual pores and number of experimental adsorption points to be included), the fulfillment of the Discrete Picard condition, and the L-curve criteria, all leading to find a reliable and robust PSD. The procedure is applied to plugged hexagonal templated silicas (PHTS), synthesized, and characterized in our laboratory.     

Titanium dioxide doped with transition metals (MxTi1?xO2, M: Ni, Co): synthesis and characterization for its potential application as photoanode

This study presents the synthesis of TiO₂ doped with different amounts of Co and Ni, starting from a simple metallic titanium powder. A successful electrophoretic deposition of these materials on ITO electrodes was achieved for its potential application as photoanodes. EDX, diffuse reflectance UV–Vis spectroscopy, and XRD measurements gave information on the chemical composition of the material and the location of the Ni or Co within the crystal structure of TiO₂. Raman spectroscopy suggests that for a higher content of doping metal above a defined percentage, the formation of metal oxide is promoted. A preliminary study of photoelectrocatalytic orange dye degradation shows higher color removal efficiency as compared to the commercial TiO₂ material.     

On the maximum cardinality of a consistent set of arcs in a random tournament

For any tournament T on n vertices, let h(T) denote the maximum number of edges in the intersection of T with a transitive tournament on the same vertex set. Sharpening a previous result of Spencer, it is proved that, if T_n denotes the random tournament on n vertices, then, $\text{P}$$\text{(h(T}{}_{\mathrm{n}}\text{) ≤}\text{1}\text{2}\text{(}{}_2{}^{\mathrm{n}}\text{) + 1.73n}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}\text{) → 1}$ as n → ∞.     

Transmission of the spin-spin coupling constants through hydrogen bonds in ammonia clusters

Spin-spin coupling constants are reported using six ab initio and fifteen DFT methods for dimers and larger clusters of ammonia. An analysis of components (Fermi contact, spin dipole, paramagnetic spin-orbit, and diamagnetic spin-orbit) of more relevant coupling constants ¹J_NH′, ^1hJ_NH′ and ^2hJ_NN has been carried out. Fermi contact is the dominant term in the total value for all constants. For dimers, a relationship between the addition of direct and intermolecular coupling constants gives the direct constants of monomer. From the comparison of all ab initio and DFT methods for dimers, SOPPA(CCSD) and S55VWN5 methods are, respectively, more reliable taking into account their accuracy and the computing time. Both methods are employed for the analysis of the transmission of coupling constants through the hydrogen bond for ammonia clusters. A linear relation between the intermolecular constants ^1hJ_NH′ and the length of the hydrogen bond is found.     

On the observation of electron–hole liquid luminescence under low excitation in Al2O3‐passivated c‐Si wafers

We report on low‐temperature photoluminescence (PL) from aluminum oxide (Al₂O₃)‐passivated c‐Si wafers, which surprisingly exhibits clear signature of the formation of the so‐called electron–hole liquid (EHL), despite the use of excitation powers for which the condensed phase is not usually observed in bulk Si. The elevated incident photon densities achieved with our micro‐PL setup together with the relatively long exciton lifetimes associated with a good quality, indirect band‐gap semiconductor such as our float‐zone c‐Si, are considered the key aspects promoting photogenerated carrier densities above threshold. Interestingly, we observe a good correlation between the intensity of the EHL feature in PL spectra and the passivation performance of the Al₂O₃ layer annealed at different temperatures. The change in the extension of the sub‐surface space‐charge region that results from the balance between the induced fixed charge in the Al₂O₃ and the defect states at the alumina/Si interface is at the origin of the observed correlation. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)