Highlights and Prospects of Hyperspherical Approach in Few-Body Quantum-Mechanical Systems

The binding energy of excitonium negative ion for ground ¹S-state in bulk conductors: Ge, Si, CdSe and for green and yellow lines of Cu₂O in hyperspherical coordinate method are found. Angular and radial correlations between electrons are taken into account by the channel functions, which are the eigen-functions of operator on the surface of sphere in six-dimensional sphere. The calculation of energies have been done using the adiabatic and Born-Oppenheimer approximations. In Born-Oppenheimer approximation is enough to give a binding energy with only 1.2% error, in adiabatic approximation this error drops to 0.7 %.     

Beryllium (boron) clustering quest in relativistic multifragmentation (BECQUEREL Project)

A physical program of irradiation of emulsions in beams of relativistic nuclei named the BECQUEREL Project is reviewed. It is destined to study in detail the processes of relativistic fragmentation of light radioactive and stable nuclei. The expected results would make it possible to answer some topical questions concerning the cluster structure of light nuclei. Owing to the best spatial resolution, the nuclear emulsions would enable one to obtain unique and evident results. The most important irradiations will be performed in the secondary beams of He, Be, B, C, and N radioactive nuclei formed on the basis of JINR Nuclotron beams of stable nuclei. We present results on the charged state topology of relativistic fragmentation of the ¹⁰B nucleus at low energy-momentum transfers as the first step of the research.     

Universal Models For Real Submanifolds

In previous papers by the present author, a machinery for calculating automorphisms, constructing invariants, and classifying real submanifolds of a complex manifold was developed. The main step in this machinery is the construction of a “nice” model surface. The nice model surface can be treated as an analog of the osculating paraboloid in classical differential geometry. Model surfaces suggested earlier possess a complete list of the desired properties only if some upper estimate for the codimension of the submanifold is satisfied. If this estimate fails, then the surfaces lose the universality property (that is, the ability to touch any germ in an appropriate way), which restricts their applicability. In the present paper, we get rid of this restriction: for an arbitrary type (n,K) (where n is the dimension of the complex tangent plane, and K is the real codimension), we construct a nice model surface. In particular, we solve the problem of constructing a nondegenerate germ of a real analytic submanifold of a complex manifold of arbitrary given type (n,K) with the richest possible group of holomorphic automorphisms in the given class.     

Exciton Molecules in Quantum Wells: Influence of the Well Width Fluctuations

The influence of the well width fluctuations on the dependence of the binding energy of excitonic complexes in quantum wells is studied by using the path-integral Monte-Carlo technique. The results are compared with available experimental data and a good agreement is found.Postdoctoral researcher of FWO-Vlaanderen     

Electric Instability in <Emphasis Type="Italic">n</Emphasis>-CdTe:In Layers with <Emphasis Type="Italic">S</Emphasis>-Shaped Voltage-Current Characteristics

A switching of the S-type in the 20–200 μm thick polycrystalline n-CdTe:In layers with resistance of 10³–10⁶ Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n-CdTe:In layers. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 28–30, June, 2005.     

Effect of nickel coating on electrochemical performance of graphite anodes for lithium ion batteries

Among the different materials often studied and proposed as negative electrodes for lithium-ion batteries, graphite anodes are the most used in commercial batteries. For this study, synthetic graphite was tested. During the first discharge 0.2 Li ions were consumed for the formation of the SEI film and the capacity reaches about 387 mAh/g. But at the end of the first charge only 72% of the initial charge was recovered (the reversible capacity is about 279 mAh/g). In order to improve this performance we have deposited metallic nickel on graphite with the intention to obtain a homogeneous thin layer able to modify the nature of the SEI film, to allow the diffusion of lithium ions through the protective layer, and also to increase the performance of graphite electrodes. The results show a decrease of the irreversible capacity loss (16% instead of 28% for pure graphite electrodes) as well as better cycleability for a nickel-deposited graphite electrode with only 11% weight ratio of nickel. On the other hand, an increase of the nickel content decreases this performance.     

Elastic scattering of slow positrons on atoms

The results of calculations of the elastic scattering cross section of positrons on noble gas and alkali atoms are presented. The calculations are performed within the one-electron Hartree-Fock approximation with multielectron correlations in the so-called random phase approximation with exchange taken into account. Virtual positronium formation is taken into account and proved to be very important. Arguments are presented that the positron polarization potential is repulsive for alkali atoms. The results obtained are in a reasonable agreement with experiment and with some previously reported calculations.     

effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

The surface of hydrogen-sensitive GaAs Schottky diodes is modified by nonpolishing etching and by producing quantum wells and quantum dots in the space-charge region of the semiconductor. The sensitivity to hydrogen is found to increase by a factor of 8–37 after the etching and by two or three orders of magnitude after the introduction of quantum wells and dots. It is shown that the increased sensitivity is associated with the lowering of the barrier at the Pd/GaAs interface, the retardation of hydrogen diffusion into GaAs due to the presence of strained quantum-size layers, and an increase in the recombination current. The presence of the recombination component is supported by luminescence from the quantum wells and quantum dots, as well as from the GaAs substrate. The etch composition is shown to be a decisive factor in raising the sensitivity.