Magnetic,structural and electrical properties of ordered and disordered Co50Fe50 films

Co₅₀Fe₅₀ films with thickness varying from 100 to 500 Å were deposited on a glass substrate by sputtering process, respectively. Two kinds of CoFe films were studied: one was the as-deposited film, and the other the annealed film. The annealing procedure was to keep the films at 400 °C for 5 h in a vacuum of 5×10⁻⁶ mbar. From the X-ray study, we find that the as-deposited film prefers the CoFe(1 1 0) orientation. Moreover, the body-centered cubic (bcc) CoFe(1 1 0) line is split into two peaks: one corresponding to the ordered body-centered tetragonal (bct) phase, and the other, the disordered bcc phase. After annealing, the peak intensity of the ordered bct phase becomes much stronger, while that of the disordered bcc phase disappears. The annealing has also caused the ordered CoFe(2 0 0) line to appear. When the amount of the ordered bct phase in Co₅₀Fe₅₀ is increased, the saturation magnetization (M_s) and coercivity (H_c) become larger, but the electrical resistivity (ρ) decreases. From the temperature coefficient of resistance (TCR) measurement, we learn that the bct grains in the CoFe film start to grow at temperature 82 °C.     

Mesoporous nanotube aggregates obtained from hydrothermally treating TiO2 with NaOH

Nanotube aggregates with high porosity were prepared from hydrothermal treatment of TiO₂ particles in NaOH at 130 °C, followed by HCl rinsing to different pH values. Pore structure of the aggregates, which were mainly mesoporous, was characterized by analyzing the N₂ sorption isotherm with different methods including the t-plot and density function theory. The surface area, pore volume and mean pore size of the aggregates increased with the rinsing acidity to reach a maximum (e.g. 400 m²/g in surface area) at pH 1.6 and then decreased with further increase of the acidity. The crystalline phase and composition of the aggregates were, as well, significantly affected by the acidity of the post-treatment rinsing. Large-surface area aggregates were of loosely-attached nanotubes, composed of both anatase TiO₂ and H₂Ti₂O₅·H₂O, obtained under a mildly acidic rinsing condition, while basic or highly acidic conditions resulted in the formation of closely coagulated dense structures consisting of different crystalline phases.     

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (V_oc = 0.74 V, J_sc = 15.62 mA/cm², F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.     

On the origin of the ferromagnetism in Zn0.8Mn0.2O having a higher Curie temperature than Zn0.8Co0.2O

Zn_0.8Co_0.2O and Zn_0.8Mn_0.2O films were deposited on substrates by a sol–gel technique. X-ray diffraction, field-emission scanning electron microscopy, photoluminescence, and ferromagnetism measurements were used to characterize these dilute magnetic semiconductors. It is shown that the ferromagnetic properties might be related to the formation of acceptor-like defects in the Zn_0.8Co_0.2O and Zn_0.8Mn_0.2O films. It is found that ferromagnetic Zn_0.8Mn_0.2O has a higher Curie temperature than Zn_0.8Co_0.2O. In addition, the higher ratio of grain-boundary area to grain volume of Zn_0.8Mn_0.2O than Zn_0.8Co_0.2O indicates that grain boundaries and related acceptors are the intrinsic origin for ferromagnetism.     

Oxygen transfer processes in (La,Sr)MnO3/Y2O3-stabilized ZrO2 cathodes: an impedance spectroscopy study

Impedance spectroscopy was used to study the oxygen reaction kinetics of La_0.8Sr_0.2MnO₃ (LSM)-based electrodes on Y₂O₃-stabilized ZrO₂ (YSZ) electrolytes. Three types of electrodes were studied: pure LSM, LSM–YSZ composites, and LSM/LSM–YSZ bilayers. The electrodes were formed by spin coating and sintering on single-crystal YSZ substrates. Measurements were taken at temperatures ranging from 550 to 850°C and oxygen partial pressures from 1×10⁻³ to 1 atm. An arc whose resistance R_el had a high activation energy, E_a=1.61±0.05 eV, and a weak oxygen partial pressure dependence, (P_O2)^−1/6, was observed for the LSM electrodes. A similar arc was observed for LSM–YSZ electrodes, where R_el(P_O2)^−0.29 and the activation energy was 1.49±0.02 eV. The combination of a high activation energy and a weak P_O2 dependence was attributed to oxygen dissociation and adsorption rate-limiting steps for both types of electrodes. LSM–YSZ composite cathodes showed substantially lower overall interfacial resistance values than LSM, but exhibited an additional arc attributed to the resistance of YSZ grain boundaries within the LSM–YSZ. At 850°C and low P_O2, an additional arc was observed with size varying as (P_O2)^−0.80 for LSM and (P_O2)^−0.57 for LSM–YSZ, suggesting that diffusion had become an additional rate limiting step. Bilayer LSM/LSM–YSZ electrodes yielded results intermediate between LSM and LSM–YSZ. The results showed that most of the improvement in electrode performance was achieved for a LSM–YSZ layer only ≈2 μm thick. However, a decrease in the grain-boundary resistance would produce much better performance in thicker LSM–YSZ electrodes.     

Vacuum-gap-based lumped element Josephson parametric amplifier

We propose a lumped element Josephson parametric amplifier with vacuum-gap-based capacitor.The capacitor is made of quasi-floating aluminum pad and on-chip ground.We take a fabrication process compatible with air-bridge technology,which makes our design adaptable for future on-chip integrated quantum computing system.Further engineering the input impedance,we obtain a gain above 20 dB over 162-MHz bandwidth,along with a quasi quantum-limit noise performance.This work should facilitate the development of quantum information processing and integrated superconducting circuit design.     

Enhanced Multiparty Controlled QSDC Using GHZ State

Recently, Gao et al. [Opt. Commun. 283 (2010) 192] pointed out that Wang et al.'s multiparty controlled quantum secure directcommunication (CQSDC) protocol [Opt. Commun. 266 (2006)732] has the information leakage problem and proposed an improvedprotocol. However, in the improved protocol, due to the introductionof an additional random sampling to avoid the weakness, the qubitefficiency is decreased. By introducing the base changing techniqueto the random sampling in Wang et al.'s protocol, this study overcomesthe information leakage problem and provides a better qubit efficiency.