Upconversion luminescence of Tm^3＋/Yb^3＋ codoped oxyfluoride glasses

Novel oxyfluoride glasses are developed with the composition of 30SiO2-15Al2O3-28PbF2-22CdF2-0.1TmF3 - xYbF3 - （4.9 - x） AlF3（x=0, 0.5, 1.0, 1.5, 2.0） in tool fraction, Furthermore, the upconversion luminescence characteristics under a 970nm excitation are investigated. Intense blue, red and near infrared luminescences peaked at 453nm, 476nm, 647nm and 789nm, which correspond to the transitions of Tm^3＋： ^1D2 →^3F4, ^1G4 →^3H6, ^1G4 →^3F4, and ^3H4 →^3H6, respectively, are observed. Due to the sensitization of Yb^3＋ ions, all the upconversion luminescence intensities are enhanced considerably with Yb^3＋ concentration increasing. The upconversion mechanisms are discussed based on the energy matching rule and quadratic dependence on excitation power. The results indicate that the dominant mechanism is the excited state absorption for those upconversion emissions.     

An exact solution of Fisher equation and its stability

In this paper, the Fisher equation is analysed. One of its travelling wave solution is obtained by comparing it with KdV--Burgers (KdVB) equation. Its amplitude, width and speed are investigated. The instability for the higher order disturbances to the solution of the Fisher equation is also studied.     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

采用Lennard-Jones原子间势研究(C60)N分子团簇的结构演化行为

采用描述原子间相互作用的Lennard-Jones势来描述C₆₀分子间的相互作用,考虑了每个C₆₀分子的一定位置取向,并采用最速下降法计算了IH,fcc,hcp,DH及SC五种典型结构满壳层(C₆₀)_N团簇(N<2000)的能量.结果显示:当尺寸较小(N<20)时,IH结构最稳定;当尺寸处于中等(50<N<300)时,HCP结构最稳定;当尺寸较大(300<N 关键词： 60团簇')" href="#">C₆₀团簇 取向 最速下降法 结构演化     

Entanglement detection in the vicinity of arbitrary Dicke states

Dicke states represent a class of multipartite entangled states that can be generated experimentally with many applications in quantum information. We propose a method to experimentally detect genuine multipartite entanglement in the vicinity of arbitrary Dicke states. The detection scheme can be used to experimentally quantify the entanglement depth of many-body systems and is easy to implement as it requires measurement of only three collective spin operators. The detection criterion is strong as it heralds multipartite entanglement even in cases where the state fidelity goes down exponentially with the number of qubits.     

Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.     

初始啁啾对飞秒脉冲在光子晶体光纤中超连续谱产生的影响

采用分步傅里叶方法模拟了初始啁啾对光子晶体光纤中超连续谱产生的影响.根据光纤长度，将光子晶体光纤中脉冲的演化分成初始展宽、剧烈展宽和饱和展宽三个阶段.通过讨论啁啾脉冲和无初始啁啾脉冲在各阶段演化的区别，发现啁啾只在初始展宽和剧烈展宽阶段对光谱有影响，当β₂C<0时啁啾有利于光谱的展宽，当β₂C>0时则刚好相反，在饱和展宽阶段啁啾不再对光谱产生影响.要想利用啁啾脉冲来获得较宽的光谱，必须选择合适的光纤长度，使输出的脉冲处于剧烈展宽阶段.这为利用啁啾脉冲在光子晶体光 关键词： 超连续谱 光子晶体光纤 分步傅里叶法 啁啾     

Torsion Structure in Riemann-Cartan Manifold and Dislocation

The U(1) gauge structure of torsion and dislocation in three dimensional Riemann-Cartan manifold have been studied. The local topological structure of dislocation have been presented by so-called topological method in which the quantum number is by Hopf indices and Brouwer degree. Furthermore, the relationship between the dislocation lines and Wilson lines of the U(1) gauge theory is discussed by using the Chern-Simons theory.     

Topological Aspects of Liquid Crystals

Using -mapping method and topological current theory, the properties and behaviors of disclination points in three-dimensional liquid crystals are studied. By introducing the strength density and the topological current of many disclination points, the total disclination strength is topologically quantized by the Hopf indices and Brouwer degrees at the singularities of the general director field when the Jacobian determinant of the general director field does not vanish. When the Jacobian determinant vanishes, the origin, annihilation, and bifurcation of disclination points are detailed in the neighborhoods of the limit point and bifurcation point, respectively. The branch solutions at the limit point and the different directions of all branch curves at the first- and second-order degenerated points are calculated. It is pointed out that a disclination point with a higher strength is unstable and will evolve to the lower strength state through the bifurcation process. An original disclination point can split into at most four disclination points at one time.