Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)

The spin polarized β-emitting nuclei¹²B (I ^π=1⁺,T _1/2=20.18 ms) were produced by the nuclear reaction¹¹B(d, p)¹²B and by the selection technique of the incident deuteron energy and the¹²B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei¹²B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment of¹²B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift.     

Propagation properties of vectorial elliptical Gaussian beams beyond the paraxial approximation

Starting from the vectorial Rayleigh diffraction integral formula and without using the far-field approximation, a solution of the wave equation beyond the paraxial approximation is found, which represents vectorial non-paraxial elliptical Gaussian beams in free space. The far-field expressions for non-paraxial Gaussian beams and elliptical Gaussian beams can be regarded as special cases treated in this paper. Some basic propagation properties of vectorial non-paraxial elliptical Gaussian beams, including the irradiance distribution, phase term, beam widths and divergence angles are studied. Numerical results are given and illustrated.     

Instantaneous frequency measurement based on complementary microwave photonic filters with a shared Mach-Zehnder interferometer

A novel configuration using only one Mach-Zehnder interferometer (MZI) for photonic-assisted instantaneous microwave frequency measurement is proposed. The amplitude comparison function (ACF), related to the input microwave frequency while independent of the input optical power and modulate index, is achieved by using a ratio of low-pass to bandpass frequency responses introduced by intensity and phase modulation with a shared MZI. The microwave frequency can be estimated by the measured ACF. A proof-of-concept experiment for measurement of RF from 5 to 10 GHz is successfully demonstrated with the measurement errors less than ± 0.2 GHz.     

Diffusion and ballistic contributions of electron-electron interaction to the conductivity in an Al0.26Ga0.74N/AlN/GaN heterostructure

The results of an experimental study of quantum correction of electron-electron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

First-principles study of fundamental properties and electronic structure of alloys

We have performed first-principles calculations using full-potential augmented-plane-wave method to investigate the fundamental properties of the Cd_1–xZn_xTe alloys. The composition dependence of the lattice constant and the bulk modulus have been estimated from total energy calculations. By means of the analytical fitting the band structures in the vicinity of the Brillouin center a complete set of effective electron- and hole-masses have also been derived. In order to further understand the effects of the chemical bonding on the above macroscopic properties we then studied the relaxation behaviors and the changes of the electronic states upon alloying for x=0.25 system. The results presented here yield a general understanding of the fundamental properties for the Cd_1–xZn_xTe crystals studies.     

水热法合成FeS2粉晶及其生长热动力学的研究

采用溶胶_凝胶水热法合成了单相黄铁矿结构的FeS2₂粉晶. 用x射线衍射、傅 氏变换红外光谱等分析手段对FeS2₂粉晶进行了表征，以简化的数学模型及相 变理论讨论了晶体 生长过程. 结果表明：FeS2₂晶粒的生长过程属于相变与扩散的混合机制，符 合经时间 指数修正的二次方动力学方程，是一个生长速率随时间变化的过程；水热晶化温度高于453 K、反应时间超过18 h且有适量的硫参与反应时，可得到单相的黄铁矿型的FeS2₂关键词： 溶胶_凝胶水热法 2粉晶')" href="#">FeS2₂粉晶 晶粒生长 热动力学     

应用双面电极的PLZT横向电光调制器电场的精确解

使用保角变换方法导出了横向电光调制器中双面电极结构的电场和电容的解析表达式，给出了用于ＰＬＺＴ电光陶瓷介质中二次电光效应分析的电场分布的物理图像。通过计算对比表明，双面电极结构电极边级区域由于过剩双折射引起的强度调制非均匀性较单面电极有所改善。     

追念钱临照先生--《钱临照文集》读后感

文章叙述了钱临照教授的科学生涯，展示了他对物理学所作的主要贡献和对现代中国科学和教育事业的发展所起的重要作用。文中也包含了作者的一些个人回忆。     

SiC衬底上异质外延GaN薄膜结构缺陷对黄光辐射的影响

利用光致发光技术对在SiC衬底上采用MOCVD异质外延未故意掺杂的GaN进行发光特性的研究,发现在室温下有很强的黄光输出,同时,采用扫描电子显微术和X光衍射对样品的表面形貌和结构进行了研究,结果发现,随着缺陷密度的减少,黄光输出强度也有所降低,因此,黄光输出强度与缺陷有很大的关系.