Linking [M(III)3] triangles with "double-headed" phenolic oximes

Strapping two salicylaldoxime units together with aliphatic α,Ω-aminomethyl links in the 3-position gives ligands which allow the assembly of the polynuclear complexes [Fe(7)O(2)(OH)(6)(H(2)L1)(3)(py)(6)](BF(4))(5)·6H(2)O·14MeOH (1·6H(2)O·14MeOH), [Fe(6)O(OH)(7)(H(2)L2)(3)](BF(4))(3)·4H(2)O·9MeOH (2·4H(2)O·9MeOH) and [Mn(6)O(2)(OH)(2)(H(2)L1)(3)(py)(4)(MeCN)(2)](BF(4))(5)(NO(3))·3MeCN·H(2)O·5py (3·3MeCN·H(2)O·5py). In each case the metallic skeleton of the cluster is based on a trigonal prism in which two [M(III)(3)O] triangles are tethered together via three helically twisted double-headed oximes. The latter are present as H(2)L(2-) in which the oximic and phenolic O-atoms are deprotonated and the amino N-atoms protonated, with the oxime moieties bridging across the edges of the metal triangles. Both the identity of the metal ion and the length of the straps connecting the salicylaldoxime units have a major impact on the nuclearity and topology of the resultant cluster, with, perhaps counter-intuitively, the longer straps producing the "smallest" molecules.     

The ground and low-lying excited potential curves of SO

A method is presented for approximating the effect of core electrons by a pseudopotential which is an extension of one previously presented by Dixon and Hugo. The pseudopotential is constructed in a fully ab initio manner from atomic SCF calculations. It is non-local in both radial and angular coordinates, but its matrix elements are none the less easy to evaluate. The method has been implemented within a multi-structure valence-bond framework. The approximations arising from the use of finite basis sets, both for the pseudopotential and for the valence wavefunction, inevitably lead to errors in calculated energies. However, these errors are largely atomic in origin. Thus, in addition to ab initio calculations we also use empirical atomsin-molecules corrections to minimize both basis set errors and atomic correlation errors. These method are applied to potential curves for 21 electronic states of the SO molecule. Comparison is made of the curves calculated using the ab initio multi-structure valence-bond method without and with the atoms-in-molecules corrections. The potential energy curves of three, previously unobserved, bound electronic states of SO are calculated. We estimate that these states, ¹Σ^-, ³Δ and ³Σ⁺, lie in the region of 3·2 to 3·4 eV above the ground state.     

Copper(I) alkynyl clusters, [Cu(x+y)(hfac)(x)(C[triple chemical bond]CR)(y)], with Cu(10)-Cu(12) cores

The facile syntheses and the structures of five new Cu(I) alkynyl clusters, [Cu(12)(hfac)(8)(C[triple chemical bond]CnPr)(4)(thf)(6)]xTHF (1), [Cu(12)(hfac)(8)(C[triple chemical bond]CtBu)(4)] (2), [Cu(12)(hfac)(8)(C[triple chemical bond]CSiMe(3))(4)] (3), [Cu(10)(hfac)(6)(C[triple chemical bond]CtBu)(4)(diethyl ether)]/[Cu(10)(hfac)(6)(C[triple chemical bond]CtBu)(3)(C[triple chemical bond]CnPr)(diethyl ether)] (4) and [Cu(10)(hfac)(6)(C[triple chemical bond]CtBu)(4)(diethyl ether)] (5) are reported, in which hfacH=1,1,1,5,5,5-hexafluoropentan-2,4-dione. The first independent molecule found in the crystals of 4 (4 a) proved to be chemically identical to 5. The Cu(10) and Cu(12) cores in these clusters are based on a central "square" Cu(4)C(4) unit. Whilst the connectivities of the Cu(10) or Cu(12) units remain identical the geometries vary considerably and depend on the bulk of the alkynyl group, weak coordination of ether molecules to copper atoms in the core and CuO intramolecular contacts formed between Cu-hfac units on the periphery of the cluster. Similar intermolecular contacts and interlocking of Cu-hfac units are formed in the simple model complex [Cu(2)(hfac)(2)(HC[triple chemical bond]CtBu)] (6). When linear alkynes, C(n)H(2n+1)C[triple chemical bond]CH, are used in the synthesis and non-coordinating solvents are used in the workup, further association of the Cu(4)C(4) cores occurs and clusters with more than eighteen copper atoms are isolated.     

Gibbs energies of interaction of the CH2 and CHOH groups from freezing point data for aqueous binary mixtures of D-mannitol,myo-inositol,and cyclohexanol

Freezing temperatures of dilute aqueous solutions of D-mannitol, myo-inositol, D-mannitol + myo-inositol, D-mannitol + cyclohexanol, and myo-inositol + cyclohexanol have been measured over the concentration range 0.1 to 1.0 mol-kg^–1. These data yield pairwise molecular Gibbs energies of interaction which have been corrected to 25°C and treated according to the Savage-Wood additivity principle to give pairwise functional group Gibbs energies of interaction for CH₂/CH₂, CH₂/COOH, and CHOH/CHOH. Anomalous behavior of some systems is discussed in terms of the interactions.     

Regio-controlled synthesis of N-substituted imidazoles

A regio-specific synthesis of N-substituted imidazoles is described. Readily available α-amino acids are converted to α-aminocarbonyl derivatives and reacted with various isothiocyanates to give N-substituted cyclic thioureas. Oxidative or reductive desulfurization of the cyclic thioureas affords structurally diversified imidazoles in good to excellent yields.     

Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5)

Modulation doped Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with a constant In _x Ga_1–x As quantum well width was investigated as a function of InAs mole fraction. If the In _x Ga_1–x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided -doped structures was obtained for the structures with -doping on both sides of the In _x Ga_1–x As quantum well. Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 m a f _T of 115 GHz was measured.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Zur colorimetrischen Bestimmung kleiner Nickelmengen

Ohne Zusammenfassung     

Asymmetric organotellurides as potent antioxidants and building blocks of protein conjugates

New asymmetric organotellurides exhibiting good antioxidant properties in vitro and in cell culture can be attached to human serum albumin.