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41.
42.
R. Knizikevi?ius 《Applied Surface Science》2006,253(3):1581-1583
The ion-beam-assisted etching of silicon in Cl2 environment is considered. The theoretically calculated dependences of silicon etching rate on the flux of Cl2 molecules at different ion current densities are compared with experimentally measured. The composition of the adsorbed layer is determined. It is found that SiCl2 molecules prevail in the adsorbed layer. The reciprocal of relative concentration of SiCl2 molecules in the adsorbed layer linearly depends on the ion-to-neutral flux ratio. 相似文献
43.
M. A. Rizzutto N. Added M. H. Tabacniks F. R. Espinoza-Qui?ones S. M. Palacio R. M. Galante R. M. Galante N. Rossi R. A. Welter A. N. Módenes 《Journal of Radioanalytical and Nuclear Chemistry》2006,269(3):727-731
Summary Kulcsszavak (angolul, ha nem azonos az elozovel) 相似文献
44.
45.
Kobayashi H. Satou Y. Okuno Y. 《IEEE transactions on plasma science. IEEE Nuclear and Plasma Sciences Society》2002,30(6):2152-2159
In an magnetohydrodynamic (MHD) generator using a frozen inert gas plasma (FIP), the availability of a frozen argon plasma, the influence of plasma uniformity at the generator inlet on the performance, and the feasibility of a large-scale generator are numerically examined by /spl gamma/-/spl theta/ two-dimensional simulation. The FIP is produced by pre-ionizing inert gas without an alkali metal seed at the generator inlet, then the ionization degree of the plasma is kept almost constant in the whole of the channel because of considerable slow recombination of the inert gas just like frozen reaction plasma. It is found that not only helium, but also argon frozen plasma MHD generation is realized, although highly accurate control of inlet ionization degree is necessary for argon. It is important to reduce the nonuniformity of plasma properties at the generator inlet in order to raise the maximum enthalpy extraction ratio. Even for the large-scale generator with 1000-MW thermal input, the ionization degree is kept almost constant in the whole of the channel and the high performance is obtainable. This result is extremely attractive for the FIP MHD generator. 相似文献
46.
Y. Fukuda T. Kobayashi H. Yoshida T. Sekizawa N. Sanada 《Applied Surface Science》2002,190(1-4):279-283
Adsorption and decomposition of triethylindium (TEI: (C2H5)3In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C2H5 to form P–C2H5 bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface. 相似文献
47.
Midori Kobayashi Hitoshi Awoki Yoshimi Nakazaki Gisaku Nakamura 《Graphs and Combinatorics》1989,5(1):243-244
In this paper, a perfect one-factorization ofK
36 is given, which is factor-1-rotational. 相似文献
48.
Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr2O3 using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and b (Δc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr2O3). A second phase, namely θ-(Al,Cr)2O3, was revealed by XRD in the sample containing 9.60 wt% Cr2O3. The structure of mullites was refined by the Rietveld method, location of Cr3+ was performed by the EPR spectroscopy. At low chromium doping level (Cr2O3 content less than ∼5 wt%) Cr3+ ions were substituted for Al3+ in the AlO6 octahedra of the mullite structure (M1 site). For higher doping level, Cr3+ ions were additionally substituted for Al3+ in the AlO6 octahedra of the second phase [θ-(Al,Cr)2O3 at 1400 °C, or α-(Al,Cr)2O3 at 1600 °C] which segregated in the system. Substitution of Cr3+ for Al3+ on M1 site in the mullite structure resulted in increase of average distances in (M1)O6 octahedron and decrease of average distances in T*O4 tetrahedron, while average distances in TO4 tetrahedron stayed almost constant. 相似文献
49.
Osamu Kobayashi 《Mathematische Zeitschrift》1989,200(2):273-277
Financial support from the FRD is gratefully acknowledged 相似文献
50.