Nuclear magnetic resonance study of the relaxation mechanisms of the Be, Al, and Si nuclei in Cr-doped Be3Al2Si6O18 crystals

The variations with temperature of the relaxation mechanisms of the ⁹Be, ²⁷Al, and ²⁹Si nuclei in emerald (Be₃Al₂Si₆O₁₈:Cr³⁺) single crystals were investigated by using a pulse NMR spectrometer. The values of the spin-lattice relaxation rates for the three nuclei are different, and these differences are attributed to the differences between their Larmor frequencies and their local nuclear environments. The relaxation rates of the ⁹Be and ²⁷Al nuclei undergo no abrupt changes within the temperature range 180-400 K, which indicates that there are no phase transitions within this temperature range. The spin-lattice relaxation rates of ⁹Be and ²⁷Al were found to be proportional to temperature. Therefore, the nuclear spin-lattice relaxation processes of these two nuclei proceed via single-phonon processes.     

High-quality, large-area monolayer graphene for efficient bulk laser mode-locking near 1.25 μm

High-quality monolayer graphene as large as 1.2×1.2?cm² was synthesized by chemical vapor deposition and used as a transmitting saturable absorber for efficient passive mode-locking of a femtosecond bulk solid-state laser. The monolayer graphene mode-locked Cr:forsterite laser was tunable around 1.25?μm and delivered sub-100?fs pulses with output powers up to 230?mW. The nonlinear optical characteristics of the monolayer graphene saturable absorber and the mode-locked operation were then compared with the case of the bilayer graphene saturable absorber.     

Modeling of price and profit in coupled-ring networks

We study the behaviors of magnetization, price, and profit profiles in ring networks inthe presence of the external magnetic field. The Ising model is used to determine thestate of each node, which is mapped to the buy-or-sell state in a financial market, where+1 is identified as the buying state, and ?1 as the selling state. Price and profit mechanisms are modeled basedon the assumption that price should increase if demand is larger than supply, and itshould decrease otherwise. We find that the magnetization can be induced between two ringsvia coupling links, where the induced magnetization strength depends on the number of thecoupling links. Consequently, the price behaves linearly with time, where its rate ofchange depends on the magnetization. The profit grows like a quadratic polynomial withcoefficients dependent on the magnetization. If two rings have opposite direction of netspins, the price flows in the direction of the majority spins, and the network with theminority spins gets a loss in profit.     

CuSbS2‐Sensitized Inorganic–Organic Heterojunction Solar Cells Fabricated Using a Metal–Thiourea Complex Solution

The device performance of sensitizer‐architecture solar cells based on a CuSbS₂ light sensitizer is presented. The device consists of F‐doped SnO₂ substrate/TiO₂ blocking layer/mesoporous TiO₂/CuSbS₂/hole‐transporting material/Au electrode. The CuSbS₂ was deposited by repeated cycles of spin coating of a Cu‐Sb‐thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b′]dithiophene)‐alt‐4,7(2,1,3‐benzothiadiazole)) (PCPDTBT) was used as the hole‐transporting material. The best‐performing cell exhibited a 3.1 % device efficiency, with a short‐circuit current density of 21.5 mA cm^?2, an open‐circuit voltage of 304 mV, and a fill factor of 46.8 %.     

Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma

60 MHz pulsed radio frequency (rf) source power and 2 MHz continuous wave rf bias power, were used for SiO₂ etching masked with an amorphous carbon layer (ACL) in an Ar/C₄F₈/O₂ gas mixture, and the effects of the frequency and duty ratio of the 60 MHz pulse rf power on the SiO₂ etch characteristics were investigated. With decreasing duty ratio of the 60 MHz pulse rf power, not only the etch rate of SiO₂ but also the etch rate of ACL was decreased, however, the etch selectivity of SiO₂ over ACL was improved with decreasing the duty ratio. On the other hand, when the pulse frequency was varied at a constant duty ratio, no significant change in the etch rate and etch selectivity of both materials could be observed. The variation of the etch characteristics was believed to be related to the change in the gas dissociation characteristics caused by the change in the average electron temperature for different pulsing conditions. The improvement in the etch selectivity with the decrease of duty ratio, therefore, was related to the decreased gas dissociation of C₄F₈ by the decrease of average electron temperature and, which resulted in a change in composition of the fluorocarbon polymer on the etched materials surface from C–C rich to CF₂ rich. With decreasing the duty ratio, not only the etch selectivity but also the improvement in the SiO₂ etch profile could be observed.     

Enantioselective total synthesis of a natural iridoid

The first total synthesis of 6-hydroxy-7-(hydroxymethyl)-4-methylenehexahydrocyclopenta[c]pyran-1(3H)-one has been accomplished. A key feature of the synthesis includes facile construction of the bicyclic lactone intermediate via intramolecular Pd(0)-catalyzed allylic alkylation and the efficient transformation of this intermediate into the iridoid skeleton employing silicon tethered radical cyclization.     

Cyclodipeptide-bridged porphyrin dimer supramolecular assemblies

A cyclodipeptide-bridged porphyrin dimer has formed fibrous and toroidal multi-porphyrin array systems by hydrogen bonding-mediated self-assembly.     

Toward higher-order passive harmonic mode-locking of a soliton fiber laser

We report >13 MHz/mW pump power efficiency in increasing the repetition rate of passive harmonic mode-locking by engineering the soliton pulse energy in Er fiber lasers incorporating carbon nanotube saturable absorber. Stable pulses with a ～5 GHz repetition rate and 40 dB of super-mode suppression are demonstrated with only ～400 mW pump power in a single-clad fiber laser.     

Study of nuclear quadrupole interactions and quadrupole Raman processes of Ga and Ga in a β-Ga2O3:Cr single crystal

Nuclear magnetic resonance (NMR) data and the spin–lattice relaxation times, T₁, of ⁶⁹Ga and ⁷¹Ga nuclei in a β-Ga₂O₃:Cr³⁺ single crystal were obtained using FT NMR spectrometry. Four sets of NMR spectra for ⁶⁹Ga (I = 3/2) and ⁷¹Ga (I = 3/2) were obtained in the crystallographic planes. The ⁶⁹Ga and ⁷¹Ga nuclei each had two chemically inequivalent Ga_I and Ga_II centers. Each of the ⁶⁹Ga and ⁷¹Ga isotopes yielded two different central NMR resonance lines originating from Ga_I and Ga_II sites. The nuclear quadrupole coupling constants and asymmetry parameters of ⁶⁹Ga_I, ⁶⁹Ga_II, ⁷¹Ga_I, and ⁷¹Ga_II centers in a β-Ga₂O₃:Cr³⁺ crystal were obtained. Analysis of the EFG tensor principal axes (PAs) for Ga nuclei and the ZFS tensor PAs for the Cr³⁺ ion confirmed that the Cr³⁺ paramagnetic impurity ion substitutes for the Ga³⁺ ion in the oxygen octahedron. In addition, the temperature dependencies of the ⁶⁹Ga and ⁷¹Ga relaxation rates were consistent with Raman processes, as T₁⁻¹ ∝ T². Even though the Cr³⁺ impurities are paramagnetic, the relaxations were dominated by electric quadrupole interactions of the nuclear spins in the temperature range investigated.