On the bounded version of Hilbert's tenth problem

 The paper establishes lower bounds on the provability of 𝒟=NP and the MRDP theorem in weak fragments of arithmetic. The theory I ⁵ E ₁ is shown to be unable to prove 𝒟=NP. This non-provability result is used to show that I ⁵ E ₁ cannot prove the MRDP theorem. On the other hand it is shown that I ¹ E ₁ proves 𝒟 contains all predicates of the form (∀i≤|b|)P(i,x)^Q(i,x) where ^ is =, <, or ≤, and I ⁰ E ₁ proves 𝒟 contains all predicates of the form (∀i≤b)P(i,x)=Q(i,x). Here P and Q are polynomials. A conjecture is made that 𝒟 contains NLOGTIME. However, it is shown that this conjecture would not be sufficient to imply 𝒟=N P. Weak reductions to equality are then considered as a way of showing 𝒟=NP. It is shown that the bit-wise less than predicate, ≤₂, and equality are both co-NLOGTIME complete under FDLOGTIME reductions. This is used to show that if the FDLOGTIME functions are definable in 𝒟 then 𝒟=N P. Received: 13 July 2001 / Revised version: 9 April 2002 / Published online: 19 December 2002 Key words or phrases: Bounded Arithmetic – Bounded Diophantine Complexity     

Automorphisms with only infinite orbits on non-algebraic elements

 This paper generalizes results of F. K?rner from [4] where she established the existence of maximal automorphisms (i.e. automorphisms moving all non-algebraic elements). An ω-maximal automorphism is an automorphism whose powers are maximal automorphisms. We prove that any structure has an elementary extension with an ω-maximal automorphism. We also show the existence of ω-maximal automorphisms in all countable arithmetically saturated structures. Further we describe the pairs of tuples (ˉa,ˉb) for which there is an ω-maximal automorphism mapping ˉa to ˉb. Received: 12 December 2001 / Published online: 10 October 2002 Supported by the ``Fonds pour la Formation à la Recherche dans l'Industrie et dans l'Agriculture' Mathematics Subject Classification (2000): Primary: 03C50; Secondary: 03C57 Key words or phrases: Automorphism – Recursively saturated structure     

On a compromise social choice correspondence

This paper analyzes the compromise social choice correspondence derived from the τ-value of digraph games. Monotonicity of this correspondence is shown. A connection between several properties of social choice correspondences based on game theoretical solutions and game theoretical properties of the underlying solutions is given. Applications to several game theoretic solutions are provided.     

A laser Doppler anemometry technique for Reynolds stresses measurement

A technique is described for the measurement of all components of mean velocity and Reynolds stresses, in a complex turbulent flow where achieving coincidence data acquisition is difficult. The method is based on data recorded using four orientations of the laser probe. It is shown that the measurement errors are not the same for all the components of the Reynolds tensor, but they are sufficiently small to give a good accuracy. An application to a turbomachinery flow is given to illustrate the method.     

Nano-tribological study on a super-hydrophobic film formed on rough aluminium substrates

A novel super-hydrophobic stearic acid (STA) film with a water contact angle of 166^o was prepared by chemical adsorption on aluminum wafer coated with polyethyleneimine (PEI) film. The micro-tribological behavior of the super-hydrophobic STA monolayer was compared with that of the polished and PEI-coated Al surfaces. The effect of relative humidity on the adhesion and friction was investigated as well. It was found that the STA monolayer showed decreased friction, while the adhesive force was greatly decreased by increasing the surface roughness of the Al wafer to reduce the contact area between the atomic force microscope (AFM) tip and the sample surface to be tested. Thus the friction and adhesion of the Al wafer was effectively decreased by generating the STA monolayer, which indicated that it could be feasible and rational to prepare a surface with good adhesion resistance and lubricity by properly controlling the surface morphology and the chemical composition. Both the adhesion and friction decreased as the relative humidity was lowered from 65% to 10%, though the decrease extent became insignificant for the STA monolayer. The project supported by the National Natural Science Foundation of China (50375151, 50323007, 10225209) and the Chinese Academy of Sciences (KJCX-SW-L2)     

Photorefractive Four-Wave Mixing Switches Utilizing Pockels Effect -Longitudinal and Lateral Switches-

We carried out detailed calculations for photorefractive wave-mixing switches based on one of three crystals with high electro-optic coefficients, namely, BaTiO₃, Strontium Barium Niobate (SBN (0.75)), and Potasium Sodium Strontium Barium Niobate (KNSBN). A comparison of results for the three crystals shows that a 0_-cut BaTiO³ crystal is suitable for a longitudinal switch and requires a voltage of about 80 for a 2-mm-thick crystal to induce sufficient phase mismatch. The electrodes must be transparent for the incident and diffracted beams. A 45_-cut SBN (0.75) crystal, however, is suitable for a lateral switch and requires a voltage of about 150 for a 1-mm-wide crystal. The electrodes do not need to be transparent.     

Errata: “Universality in Orthogonal and Symplectic Invariant Matrix Models with Quartic Potential”

The errata concern mainly the last computations for the universality of the local statistics of eigenvalues at the edge of the spectrum in parts (iii) of Theorems 2.3 and 2.4.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.