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11.
The peroxyoxalate chemiluminescence(CL) detection method for the evaluation of the CL intensity of malondialdehyde(MDA) condensates with seven 2-thiobarbituric acid derivatives is described. The method consists of a flow injection technique together with a CL detection system using bis(2,4,6-trichlorophenyl) oxalate(TCPO) and hydrogen peroxide as chemiluminogenic reagents. Linear correlations between CL intensity and concentration are obtained for pmol levels of condensates. Among the condensates, 1,3-diethyl-2-thiobarbituric acid(DETBA)-MDA shows the largest CL intensity. High performance liquid chromatography (HPLC)/CL detection of DETBA-MDA and 1,3-diphenyl-2-thiobarbituric acid(DPTBA)-MDA using a mixture of TCPO and hydrogen peroxide in acetonitrile as a postcolumn reagent solution is also described. The detection limits for DETBA-MDA and DPTBA-MDA are 20 and 200 fmol, respectively, per 20 microL injection at a signal-to-noise ratio of 2. This HPLC/CL detection system was applied to the determination of MDA in rat brains by using DETBA as a fluorescent derivatizing reagent. 相似文献
12.
Yamada Kaoru Matsutani Shigeaki Uchiyama Akira Takahashi Toshio 《Journal of inclusion phenomena and macrocyclic chemistry》1991,11(1):49-54
Analyses of crown ether complexes of alkali metal ions and characterization of the complexes formed inm-nitrobenzyl alcohol have been carried out by fast atom bombardment (FAB) mass spectrometry. By using m-nitrobenzyl alcohol as a matrix for measurements, the stoichiometry of the complexes was assessed on the basis of the observed FAB peaks. In addition, the formation of crown ether-alkali metal complexes at a 2 : 1 molar ratio was enhanced by increasing the ionic radius of the metal ion in agreement with previous observations. On these grounds, FAB mass spectrometry may provide a rapid means for investigation of the complexation behavior of crown ethers and the stoichiometry of the complexes. 相似文献
13.
K. Ishikawa H. Nakano H. Masuda C. Kusano Y. Takahashi T. Hamagishi N. Endo 《Fiber and Integrated Optics》1992,11(4):385-394
A 10-Gbit/s optical receiver is developed using low-capacitance HBT IC technology. The HBT allows a cutoff frequency of 45 GHz and a maximum oscillation frequency of 70 GHz. The receiver contains an automatic gain-control amplifier IC with a gain of 16 dB, a bandwidth of 10.7 GHz, and a decision-circuit IC with an ambiguity of 66 mVp-p at a data rate of 10 Gbit/s. The sensitivity of this receiver is -26.5 dBm at a bit error rate of 10-9. Transmission over a 140-km fiber was achieved successfully. 相似文献
14.
Haitao Yang Tomoyuki Ogawa Daiji Hasegawa C.N. Chinnasamy Migaku Takahashi 《Journal of magnetism and magnetic materials》2006
Monodisperse bimetallic Pd–Co nanoparticles were prepared via a thermal decomposition of cobalt carbonyl using palladium seeds at the Pd/Co molar ratios 0.5%, 1%, and 5%. The heterogeneously nucleated nanoparticles without any size-selective precipitation are sufficiently uniform to self-assemble into ordered arrays. The as-synthesized nanoparticles are each a single crystal with a complex cubic structure called ε-Co. The presence of Pd seeds seems to improve the stability of Co nanoparticles against oxidation based on the results from time-dependent magnetization measurement. 相似文献
15.
S. Takahashi T. Yamashita H. Imamura S. Maekawa 《Journal of magnetism and magnetic materials》2002,240(1-3):100-102
The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τs becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors. 相似文献
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Y. KatoD. Ichii K. OhashiH. Kunugita K. Ema K. TanakaT. Takahashi T. Kondo 《Solid State Communications》2003,128(1):15-18
We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C4H9NH3)2PbBr4 by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy. 相似文献
19.
H. Kobayashi T. Sakurai Y. Yamashita T. Kubota O. Maida M. Takahashi 《Applied Surface Science》2006,252(21):7700-7712
X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO2) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO2 layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells. 相似文献
20.
K. Takamiya T. Fukunishi R. Tsujito S. Fukutani T. Takahashi S. Shibata S. Uchida 《Journal of Radioanalytical and Nuclear Chemistry》2007,273(1):195-198
The adsorption behavior of fission products to various soils was studied using a multitracer. The multitracer was prepared
by neutron irradiation of 235U. Distribution coefficients of fission products were obtained for seventeen kinds of Japanese soils. It was found that zirconium,
niobium, and rare earth elements show high distribution coefficients for all soil samples, however, elements like alkali metals
show varied values. 相似文献